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    Vishay Siliconix IRFZ14L

    MOSFET N-CH 60V 10A TO262-3
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    IRFZ14L Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IRFZ14L International Rectifier HEXFET POWER MOSFET Original PDF
    IRFZ14L Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 10A TO-262 Original PDF
    IRFZ14L Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    IRFZ14L Datasheets Context Search

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    IRFZ14L

    Abstract: IRFZ14S SiHFZ44L IRFZ14STRL SiHFZ14L SiHFZ14L-E3 SiHFZ14S SiHFZ14S-E3 SiHFZ14STL
    Text: IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) (Ω) VGS = 10 V 0.20 Qg (Max.) (nC) 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single D2PAK (TO-263) G G D S Advanced Process Technology Surface Mount (IRFZ14S, SiHFZ14S)


    Original     		PDF IRFZ14S, IRFZ14L, SiHFZ14S SiHFZ14L O-263) O-262) IRFZ14L IRFZ14S SiHFZ44L IRFZ14STRL SiHFZ14L-E3 SiHFZ14S-E3 SiHFZ14STL

    Untitled

    Abstract: No abstract text available
    Text: IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRFZ14S, SiHFZ14S) • Low-Profile Through-Hole (IRFZ14L, SiHFZ14L)


    Original     		PDF IRFZ14S, IRFZ14L, SiHFZ14S SiHFZ14L 2002/95/EC 2002/95/EC.

    Untitled

    Abstract: No abstract text available
    Text: IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRFZ14S, SiHFZ14S) • Low-Profile Through-Hole (IRFZ14L, SiHFZ14L)


    Original     		PDF IRFZ14S, IRFZ14L, SiHFZ14S SiHFZ14L 2002/95/EC 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRFZ14S, SiHFZ14S) • Low-Profile Through-Hole (IRFZ14L, SiHFZ14L)


    Original     		PDF IRFZ14S, IRFZ14L, SiHFZ14S SiHFZ14L 2002/95/EC 11-Mar-11

    AN-994

    Abstract: IRFZ14 IRFZ14L IRFZ14S
    Text: PD - 9.890A IRFZ14S/L HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount IRFZ14S Low-profile through-hole (IRFZ14L) 175°C Operating Temperature Fast Switching D VDSS = 60V RDS(on) = 0.20Ω G ID = 10A S Description Third Generation HEXFETs from International Rectifier


    Original     		PDF IRFZ14S/L IRFZ14S) IRFZ14L) AN-994 IRFZ14 IRFZ14L IRFZ14S

    AN-994

    Abstract: IRFZ14 IRFZ14L IRFZ14S
    Text: PD - 9.890A IRFZ14S/L HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount IRFZ14S Low-profile through-hole (IRFZ14L) 175°C Operating Temperature Fast Switching D VDSS = 60V RDS(on) = 0.20Ω G ID = 10A S Description Third Generation HEXFETs from International Rectifier


    Original     		PDF IRFZ14S/L IRFZ14S) IRFZ14L) AN-994 IRFZ14 IRFZ14L IRFZ14S

    IRFZ14L

    Abstract: IRFZ14S IRFZ14STRL SiHFZ14L SiHFZ14S SiHFZ14STL SiHFZ44L
    Text: IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) () VGS = 10 V 0.20 Qg (Max.) (nC) 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single DESCRIPTION D D2PAK (TO-263) I2PAK (TO-262) G G D S • Halogen-free According to IEC 61249-2-21


    Original     		PDF IRFZ14S, IRFZ14L, SiHFZ14S SiHFZ14L O-263) O-262) IRFZ14L IRFZ14S IRFZ14STRL SiHFZ14STL SiHFZ44L

    SiHFZ44L

    Abstract: No abstract text available
    Text: IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) (Ω) VGS = 10 V 0.20 Qg (Max.) (nC) 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single (TO-262) D2PAK G Advanced Process Technology Surface Mount (IRFZ14S/SiHFZ14S)


    Original     		PDF IRFZ14S, IRFZ14L, SiHFZ14S SiHFZ14L IRFZ14S/SiHFZ14S) IRFZ14L/SiHFZ14L) 18-Jul-08 SiHFZ44L

    451 MOSFET

    Abstract: No abstract text available
    Text: PD - 9.890A IRFZ14S/L HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount IRFZ14S Low-profile through-hole (IRFZ14L) 175°C Operating Temperature Fast Switching D VDSS = 60V RDS(on) = 0.20Ω G ID = 10A S Description Third Generation HEXFETs from International Rectifier


    Original     		PDF IRFZ14S/L IRFZ14S) IRFZ14L) 08-Mar-07 451 MOSFET

    Untitled

    Abstract: No abstract text available
    Text: IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRFZ14S, SiHFZ14S) • Low-Profile Through-Hole (IRFZ14L, SiHFZ14L)


    Original     		PDF IRFZ14S, IRFZ14L, SiHFZ14S SiHFZ14L 2002/95/EC 2011/65/EU

    Untitled

    Abstract: No abstract text available
    Text: IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) (Ω) VGS = 10 V 0.20 Qg (Max.) (nC) 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single (TO-262) D2PAK G Advanced Process Technology Surface Mount (IRFZ14S/SiHFZ14S)


    Original     		PDF IRFZ14S, IRFZ14L, SiHFZ14S SiHFZ14L IRFZ14S/SiHFZ14S) IRFZ14L/SiHFZ14L) 12-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) () VGS = 10 V 0.20 Qg (Max.) (nC) 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single DESCRIPTION D D2PAK (TO-263) I2PAK (TO-262) G G D S • Halogen-free According to IEC 61249-2-21


    Original     		PDF IRFZ14S, IRFZ14L, SiHFZ14S SiHFZ14L 2002/95/EC 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRFZ14S, SiHFZ14S) • Low-Profile Through-Hole (IRFZ14L, SiHFZ14L)


    Original     		PDF IRFZ14S, IRFZ14L, SiHFZ14S SiHFZ14L 2002/95/EC 11-Mar-11

    AN-994

    Abstract: IRFZ14 IRFZ14L IRFZ14S 548H
    Text: PD - 9.890A IRFZ14S/L HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount IRFZ14S Low-profile through-hole (IRFZ14L) 175°C Operating Temperature Fast Switching D VDSS = 60V RDS(on) = 0.20Ω G ID = 10A S Description Third Generation HEXFETs from International Rectifier


    Original     		PDF IRFZ14S/L IRFZ14S) IRFZ14L) 12-Mar-07 AN-994 IRFZ14 IRFZ14L IRFZ14S 548H

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.890A International IQ R Rectifier IR F Z 14 S /L HEXFET Power M OSFET Advanced Process Technology Surface Mount IRFZ14S Low-profile through-hole (IRFZ14L) 175°C Operating Temperature Fast Switching V dss = 60V R D S (o n ) Id = = 0 .2 0 ft 10A


    OCR Scan     		PDF IRFZ14S) IRFZ14L)