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    110N20 Search Results

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    110N20 Price and Stock

    Infineon Technologies AG IPP110N20N3GXKSA1

    MOSFET N-CH 200V 88A TO220-3
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    DigiKey IPP110N20N3GXKSA1 Tube 6,802 1
    • 1 $7.27
    • 10 $7.27
    • 100 $5.1898
    • 1000 $4.12132
    • 10000 $3.86183
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    Avnet Americas IPP110N20N3GXKSA1 Bulk 16 Weeks, 4 Days 1
    • 1 $8.17
    • 10 $7.01
    • 100 $5.84
    • 1000 $5.84
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    Mouser Electronics IPP110N20N3GXKSA1 31
    • 1 $7.86
    • 10 $7.86
    • 100 $5.62
    • 1000 $4.17
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    TME IPP110N20N3GXKSA1 54 1
    • 1 $7.49
    • 10 $6.22
    • 100 $5.39
    • 1000 $4.83
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    Chip1Stop IPP110N20N3GXKSA1 Tube 1,044
    • 1 $4.42
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    New Advantage Corporation IPP110N20N3GXKSA1 100 1
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    • 100 $4.99
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    Infineon Technologies AG IPB110N20N3LFATMA1

    MOSFET N-CH 200V 88A TO263-3
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    DigiKey IPB110N20N3LFATMA1 Reel 3,000 1,000
    • 1 -
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    • 1000 $4.66726
    • 10000 $4.3734
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    IPB110N20N3LFATMA1 Cut Tape 20 1
    • 1 $8.23
    • 10 $7.053
    • 100 $5.8773
    • 1000 $5.18584
    • 10000 $5.18584
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    IPB110N20N3LFATMA1 Digi-Reel 1
    • 1 $8.23
    • 10 $7.053
    • 100 $5.8773
    • 1000 $5.18584
    • 10000 $5.18584
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    Avnet Americas IPB110N20N3LFATMA1 Reel 20 Weeks 1,000
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    Mouser Electronics IPB110N20N3LFATMA1 2,138
    • 1 $8.9
    • 10 $7.63
    • 100 $6.35
    • 1000 $5.02
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    Bristol Electronics IPB110N20N3LFATMA1 30
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    Chip1Stop IPB110N20N3LFATMA1 Cut Tape 736
    • 1 $7.53
    • 10 $5.58
    • 100 $4.62
    • 1000 $4.2
    • 10000 $4.2
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    New Advantage Corporation IPB110N20N3LFATMA1 2,000 1
    • 1 -
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    • 100 -
    • 1000 $6.53
    • 10000 $6.09
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    Infineon Technologies AG IPP110N20NAAKSA1

    MOSFET N-CH 200V 88A TO220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IPP110N20NAAKSA1 Tube 2,313 1
    • 1 $6.13
    • 10 $6.13
    • 100 $4.5338
    • 1000 $4.5338
    • 10000 $4.5338
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    Avnet Americas IPP110N20NAAKSA1 Bulk 17 Weeks, 5 Days 1
    • 1 $9.82
    • 10 $8.41
    • 100 $7.01
    • 1000 $7.01
    • 10000 $7.01
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    IPP110N20NAAKSA1 Tube 20 Weeks 500
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    Bristol Electronics IPP110N20NAAKSA1 191
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    Rochester Electronics IPP110N20NAAKSA1 1 1
    • 1 $5.72
    • 10 $5.72
    • 100 $5.38
    • 1000 $4.87
    • 10000 $4.87
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    TME IPP110N20NAAKSA1 1
    • 1 $13.1
    • 10 $9.04
    • 100 $7.85
    • 1000 $7.85
    • 10000 $7.85
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    Chip1Stop IPP110N20NAAKSA1 Tube 846
    • 1 $7.77
    • 10 $5.66
    • 100 $4.52
    • 1000 $3.97
    • 10000 $3.97
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    Littelfuse Inc IXTK110N20L2

    MOSFET N-CH 200V 110A TO264
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTK110N20L2 Tube 664 1
    • 1 $37.29
    • 10 $37.29
    • 100 $28.9857
    • 1000 $28.9857
    • 10000 $28.9857
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    CoreStaff Co Ltd IXTK110N20L2 31
    • 1 $37.318
    • 10 $27.366
    • 100 $27.366
    • 1000 $27.366
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    IXTK110N20L2 225
    • 1 $37.318
    • 10 $27.366
    • 100 $27.366
    • 1000 $27.366
    • 10000 $27.366
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    Littelfuse Inc IXTN110N20L2

    MOSFET N-CH 200V 100A SOT227B
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTN110N20L2 Tube 309 1
    • 1 $50.34
    • 10 $50.34
    • 100 $42.18167
    • 1000 $39.36942
    • 10000 $39.36942
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    Find more 110N20 price and stock on Findchips.com

    110N20 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    107n20n

    Abstract: 110N20N IPB107N20N3 IPP110N20N3 G DSV80 D88 z IPI110N20N3 IPI110N20N3 G IEC61249-2-21 PG-TO220-3
    Text: IPB107N20N3 G 110N20N3 G 110N20N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 200 V R DS(on),max (TO263) 10.7 mΩ ID 88 A • Very low on-resistance R DS(on)


    Original     		PDF IPB107N20N3 IPP110N20N3 IPI110N20N3 IEC61249-2-21 PG-TO263-3 PG-TO220-3 PG-TO262-3 107n20n 110N20N IPP110N20N3 G DSV80 D88 z IPI110N20N3 G IEC61249-2-21 PG-TO220-3

    107n20n

    Abstract: No abstract text available
    Text: IPB107N20N3 G 110N20N3 G 110N20N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 200 V RDS(on),max (TO263) 10.7 mW ID • Very low on-resistance R DS(on) 88 A


    Original     		PDF IPB107N20N3 IPP110N20N3 IPI110N20N3 IEC61249-2-21 PG-TO263-3 PG-TO220-3 PG-TO262-3 107n20n

    107N20NA

    Abstract: 110N20NA 110N20N IPP110N20NA IPB107N20NA P-1031 107n20n
    Text: IPB107N20NA OptiMOSTM3 Power-Transistor 110N20NA Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 200 V RDS(on),max (TO263) 10.7 mW ID 88 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		PDF IPB107N20NA IPP110N20NA IEC61249-2-21 PG-TO263-3 107N20NA PG-TO220-3 110N20NA 107N20NA 110N20NA 110N20N IPP110N20NA IPB107N20NA P-1031 107n20n

    sd 20n60

    Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
    Text: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06


    Original     		PDF O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 76N07-11 76N07-12 100N10 170N10 sd 20n60 IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80

    7n60b

    Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
    Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3


    Original     		PDF AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80

    110N20N

    Abstract: 107n20n D88 z IPB107N20N3G
    Text: IPB107N20N3 G 110N20N3 G 110N20N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 200 V RDS(on),max (TO263) 10.7 mW ID 88 A • Very low on-resistance R DS(on)


    Original     		PDF IPB107N20N3 IPP110N20N3 IPI110N20N3 IEC61249-2-21 PG-TO263-3 107N20N PG-TO220-3 110N20N 107n20n D88 z IPB107N20N3G

    110N20N

    Abstract: No abstract text available
    Text: IPB107N20N3 G 110N20N3 G 110N20N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 200 V R DS(on),max (TO263) 10.7 mΩ ID 88 A • Very low on-resistance R DS(on)


    Original     		PDF IPB107N20N3 IPP110N20N3 IPI110N20N3 IEC61249-2-21 PG-TO263-3 PG-TO220-3 PG-TO262-3 110N20N

    Untitled

    Abstract: No abstract text available
    Text: IPB107N20NA OptiMOSTM3 Power-Transistor 110N20NA Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 200 V RDS(on),max (TO263) 10.7 mW ID • Very low on-resistance R DS(on) 88 A • 175 °C operating temperature


    Original     		PDF IPB107N20NA IPP110N20NA IEC61249-2-21 PG-TO263-3 PG-TO220-3 107N20NA 110N20NA

    IXFK110N20

    Abstract: 20n20 IXFN120N20 IXFK120N20
    Text: •1IXYS_ ^ m ^ VDSS HiPerFET Power MOSFET IXFN 120N20 IXFN 110N20 IXFK 120N20 IXFK 110N20 Single MOSFET Die Symbol Test Conditions Maximum Ratings IXFK IXFN IXFN 120 110 120 IXFK 110 v DSS TO-264 AA IXFK ?D VoCR Tj = 25°C to 150°C


    OCR Scan     		PDF IXFN120N20 IXFN110N20 IXFK120N20 IXFK110N20 O-264 20N20 20n20

    ixys ixfn 55n50

    Abstract: 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60
    Text: i , i - •*.*• - f _ _ , ; . ' x' r < r • Z* i't- y V ' -_ « i W^ | Contents V DSS max ^Otfcont Tc = 2 5 “C □ DS<ön) Tc = 25 °C V A il 60 76 0.011 0.012 200 0.006 76 0.011 0.012 200 0.006 67 75 0.025 0.02 150 0.012 170 0.01


    OCR Scan     		PDF O-247 O-247 T0-204 O-264 O-264 76N06-11 75N06-12 110N06 76N07-11 76N07-12 ixys ixfn 55n50 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60

    110N20

    Abstract: pf 480 d25
    Text: PRELIMINARY DATA SHEET v DSS HiPerFET Power MOSFET IXFN IXFN IX F K IX F K Single MOSFET Die 12 0N 2 0 11 0N 20 120 N 20 11 0N 2 0 200V 200V 200V 200V p DS on ^D25 120A 110A 120A 110A 17m£2 20m£2 17m£2 20m£2 200ns 200ns 200ns 200ns TO-264 AA (IXFK)


    OCR Scan     		PDF 200ns 200ns O-264 110N20 120N20 Cto150 110N20 pf 480 d25

    110N20

    Abstract: 120N20 IXFK110N20 Mosfet P 110A, diode lt 429
    Text: PRELIMINARY DATA SHEET v DSS HiPerFET Power MOSFET IXFN IXFN IX F K IX FK Single MOSFET Die 120N 20 110N 20 120N 20 110N 20 200V 200V 200V 200V D ^D25 120A 110A 120A 110A DS on 17m£2 20m Q, 17mQ 20m Q 200ns 200ns 200ns 200ns TO-264 AA (IXFK) >D Symbol


    OCR Scan     		PDF 120N20 200ns 110N20 IXFK110N20 Mosfet P 110A, diode lt 429

    110N2

    Abstract: No abstract text available
    Text: ftiY V C E B W i. HiPerFET Power MOSFET IX FN IXFN IX F K IX F K Single M OSFET Die Symbol Test Conditions IXFK Tj Tj Vos VGSM Continuous Transient • w <« = 25°C to150°C = 25°C to 150°C Tc = 25°C Tc = 25«C Tc = 25°C 120N 20 110N 20 120N 20


    OCR Scan     		PDF O-264 to150 OT-227 110N2

    52N30

    Abstract: 20n80 ixfh 60N60 IXFX 44N80 15n10 7n80 E51G 44N80 60n60 46N50
    Text: HiPerFET Power MOSFETs LowGa>°-c,ar rypes- - s » F series - Avalanche ruggedness with Fast Intrinsic Diode p > Type *D(25 c r38 typ. V max. typ. max. max. fi PF PF ns nC K/W W E T jm = 150"C ► New V Tc = 25°C 76 0.011 4400 1200 100 240 0.42 360 70


    OCR Scan     		PDF 76N06-11 76N07-11 76N07-12 67N10 75N10 50N20 58N20 74N20 80N20 35N30 52N30 20n80 ixfh 60N60 IXFX 44N80 15n10 7n80 E51G 44N80 60n60 46N50

    DSE 130 -06A

    Abstract: vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50
    Text: Alphanumerical Index A AXC-051 AXC-051-R AXC-102 AXV-002 48 48 48 49 C CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 ¡08 19-08 h oi 19-08 h o lS 19-12 h o i 19-12 h o lS 20*12 io1 20-14 ¡01 20-16 ¡01


    OCR Scan     		PDF AXC-051 AXC-051-R AXC-102 AXV-002 015-14to1 2x45-16io1 2x60-08io1 2x60-12io1 2x60-14io1 2x60-16io1 DSE 130 -06A vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50