Untitled
Abstract: No abstract text available
Text: Module no:1704033 LabelId:1704033 Operator:Phoenix 16:14:09, Donnerstag, 28. Juni 2001 KDS 10-PE Pitch 10 IEC 2 [mm ] rigid solid Connection data 0.5-16 I U [A] [V] flexible stranded AWG 0.5-10 20-6 Solder connection 76 2 50 ) CAF Type Order No. Pcs. Pkt.
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10-PE
10-pos.
10-section,
10/S0
10-PE/S0
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7443003
Abstract: No abstract text available
Text: CD-R O PERATIN G PLAY TEM P. —25~+70°C O PERATIN G (REC O RD ) TEM P. -5~+55°C '. . IF É ^ r u p ié ' 1 f è ìl~ 2 4 f t Ä Ì T ' X - A - 7 ' f K U > v I B i l ì S J t f t j f c "Super wide range" design assure of writing at all speed (1x to 24x)
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10OOBtffiiU
106KPa
60g/m3
5--30g/m3
30g/m3
7443003
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M 1661 S
Abstract: No abstract text available
Text: FLK102XV f u j Ït s u GaAs FET and H E M T Chips FEATURES • • • • High Output Power: P-|dB = 30.0dBm Typ. High Gain: G-j^B = 6.5dB(Typ.) High PAE: r iadd = 31%(Typ.) Proven Reliability I Drain DESCRIPTION Drain É The FLK102XV chip is a power GaAs FET that is designed for
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FLK102XV
FLK102XV
M 1661 S
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Nippon capacitors
Abstract: No abstract text available
Text: HB56A264EJ-5/6/7 2,097,152-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-740A Z Rev. 1.0 Feb. 7, 1997 Description The HB56A264EJ belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The
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HB56A264EJ-5/6/7
152-word
64-bit
ADE-203-740A
HB56A264EJ
16-Mbit
HM5117800)
16-bit
74ABT16244)
Nippon capacitors
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FLK022
Abstract: FLK022XV GaAs FET HEMT Chips FLK022XP
Text: FLK022XP, FLK022XV fujÏtsu G a A s F E T a n d H E M T Chips FEATURES • • • • High Output Power: P-|dB = 24.0dBm Typ. High Gain: G ^ b = 7.0dB(Typ.) High PAE: riadd = 32%(Typ.) Proven Reliability DESCRIPTION The FLK022XP, and FLK022XV chip is a power GaAs FET that is
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FLK022XP,
FLK022XV
FLK022XV
FLK022XP
FLK022
GaAs FET HEMT Chips
FLK022XP
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Untitled
Abstract: No abstract text available
Text: F LR026XP ; F L R 0 2 6 X V GaAs F E T and M IM T Chips ELECTRICAL CHARACTERISTICCS Ambient Temperature Ta=25°C Item Symbol Saturated Drain Current >DSS Test Conditions Min. - 50 - mS -1.0 -2.0 -3.5 V -4 - - V 22 23 - dBm 6.5 7.5 - dB - 28 - % 22 23 - dBm
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LR026XP
18GHz
18GHz
25jim
FLR026XP
FLR026XV
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Untitled
Abstract: No abstract text available
Text: FHR20X GaAs F E T an d H E M T Chins ELECTRICAL CHARACTERISTI CS Ambient Temperature Ta=25° C Item Symbol Saturated Drain Current Test Conditions Min. Limit Typ. Max. Unit IDSS Vos = 2V, Vqs = OV 5 15 30 mA Transconductance 9m V d s = 2V, Id s = 5mA 20
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FHR20X
18GHz
10pes,
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Untitled
Abstract: No abstract text available
Text: First Edition LCD Module Technical Specification Sep 27, 2007 Final R evision * F-55157G N B-LW-AIN OPTREX CORPORATION Approved : Toshiyuki Okamoto M OBILE,CO N SUM iRUm U STRY DESIGN DIV. Checked i n : Saioshi San o MOBILE,CONSUMER.&.INDUSTR.Y DESIGN DIV .
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F-55157G
F-55157GNB-LW
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cs 2648
Abstract: FLR106XV
Text: FLR 106X V fujÏtsu G a A s F E T a n d H E M T Chips FEATURES • High Output Power: P-|dB = 29.0dBm Typ. • High Gain: G ^ b = 7.0dB(Typ.) • High PAE: riadd = 28%(Typ.) • Proven Reliability DESCRIPTION The FLR106XV chip is a power GaAs FET that is designed
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FLR106XV
Condi50
cs 2648
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FLC081XP
Abstract: No abstract text available
Text: FLC081XP Füjrrsu GaAs FET and HEMT Chips FEATURES • • • • High Output Power: P-|<jB = 28.5dBm Typ. High Gain: G ^ b = 7.0dB(Typ.) High PAE: r iacjç| = 31.5%(Typ.) Proven Reliability DESCRIPTION The FLC081XP chip is a power GaAs FET that is designed for general
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FLC081XP
FLC081XP
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uCOM-4
Abstract: 4218160 UPD556B uCOM-4 instruction set PD42S18160 ucom44 b427525
Text: fiPD556B \ / SEC NEC Electronics US.A. Inc. Microcomputer Division fiCOM-4 4-BIT SINGLE CHIP ROM-LESS EVALUATION CHIP DESCRIPTION T h e ;uPD556B is the ROM-less evaluation chip fo r the ;uCOM-4 4 -b it single chip m icro com puter fa m ily . The /liP D 5 56B is used in conjunction w ith an external 2 0 4 8 x 8-bit
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uPD556B
/UPD556B
LM27S2S
001157M
//PD42S18160,
uCOM-4
4218160
uCOM-4 instruction set
PD42S18160
ucom44
b427525
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Untitled
Abstract: No abstract text available
Text: FLR056XV Füjrrsu GaAs FET and HEMT Chips FEATURES • High Output Power: P-|<jB = 26.0dBm Typ. • High Gain: G ^ b = 8.0dB(Typ.) • High PAE: r)adc| = 29%(Typ.) • Proven Reliability DESCRIPTION The FLR056XV chip is a power GaAs FET that is designed for
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FLR056XV
FLR056XV
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Untitled
Abstract: No abstract text available
Text: DRAW ING No.: M 3 0 - 3 0 1 IF IN D O U BT - AS K XX 46R NOT TO S C A LE TH IR D A N G LE PR O JEC TIO N -A+0.15.25+0.05- SPECIFICATIONS: M A TE R IA LMOULDING: NYLON 9T, U L 9 4 V - 0 CONTACT: PHOSPHOR BRONZE, 0.3MM FLAT PH FIN ISH :TIN PLATED ELECTRICAL:CURRENT RATING: 1A A C /D C MAX.
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M30-301
M30-301
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Untitled
Abstract: No abstract text available
Text: HL6312G Red Laser Diode for Industry and Measurement Application Error! Not a valid filename. ADE-208-190 F Z 7th. Edition May 1997 Description • The HL6312G is a 0.63|im band AlGalnp laser diode with multi quantumwell (MQW) structure. Wavelength is equal to He-Ne Gas laser. It is suitable as a light source in barcode readers, laser
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HL6312G
ADE-208-190
HL6312G
633nm
10pes
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fsx51x
Abstract: No abstract text available
Text: FSX51X GaAs FET and HEMT Chips ELECTRICAL CHARACTERIST CS Am bient Temperature Ta=25°C Item Symbol Saturated Drain Current IDSS Condition Min. Limit Typ. Max. Unit Vos =3V, VGS =0V 30 60 120 mA Transconductance gm V d S = 3V, Id s =30mA 18 25 - mS Pinch-off Voltage
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FSX51X
fsx51x
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FLk052
Abstract: No abstract text available
Text: FLK052XV f u j Ït s u GaAs FET and H E M T Chips FEATURES • • • • High Output Power: P-|dB = 27.0dBm Typ. High Gain: G ^ b = 7.0dB(Typ.) High PAE: r iadd = 32%(Typ.) Proven Reliability DESCRIPTION The FLK052XV chip is a power GaAs FET that is designed for
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FLK052XV
FLK052XV
FLk052
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FLR056XV
Abstract: GaAs FET HEMT Chips
Text: FLR056XV fujÏtsu G a A s F E T a n d H E M T Chips FEATURES • High Output Power: P-|dB = 26.0dBm Typ. • High Gain: G ^ b = 8.0dB(Typ.) • High PAE: Tiadd = 29%(Typ.) • Proven Reliability DESCRIPTION The FLR056XV chip is a power GaAs FET that is designed for
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FLR056XV
FLR056XV
GaAs FET HEMT Chips
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FLR026XV
Abstract: No abstract text available
Text: FLR026XP, FLR026XV n eP ,. G a A s F E T a n d H E M T Chips r U J I 1b U FEATURES • High Output Power: P-|d B = 23.0dBm Typ. • High Gain: G 1dB = 7.5dB(Typ.)(FLR026XP) G 1dB = 8.5dB(Typ.)(FLR026XV) • High PAE: r\addl = 28%(Typ.)(FLR026XP) *ladd = 29%(Typ.)(FLR026XV)
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FLR026XP,
FLR026XV
FLR026XP)
FLR026XV)
FLR026XV
Temperatur51
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fujitsu gaas fet
Abstract: FLC151xp FLC151 FUJITSU MICROWAVE
Text: FLC151XP fujÏtsu GaAs FET and H E M T Chips FEATURES • • • • High Output Power: P-i ^ b = 31.5dBm Typ. High Gain: G ^ b = 6.0dB(Typ.) High PAE: r i ^ d = 29.5%(Typ.) Proven Reliability - ^ — & Drain- Drain
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FLC151XP
FLC151XP
fujitsu gaas fet
FLC151
FUJITSU MICROWAVE
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FLK202XV
Abstract: No abstract text available
Text: FLK202XV Füjrrsu GaAs FET and HEMT Chips FEATURES • • • • High O utput Power: P-|<jB = 32.5dBm Typ. High Gain: G -j^B = 6.0dB(Typ.) High PAE: r iadd = 27% (Typ.) Proven Reliability DESCRIPTION The FLK202XV chip is a pow er GaAs FET that is designed
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FLK202XV
FLK202XV
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FLK102
Abstract: No abstract text available
Text: F LK102 XV GciAs F E T a nd H E M T Chips ELECTRICAL CHARACTERISE CS Ambient Temperature Ta=25° C Item Symbol Saturated Drain Current Test Conditions IDSS 400 600 mA - 200 - mS -1.0 -2.0 -3.5 V -5 - - V 29 30 - dBm 5.5 6.5 - dB - 31 - % V q s = 5V>!dS = 250mA
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LK102
250mA
10pes,
FLK102
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Untitled
Abstract: No abstract text available
Text: HB56A264EJ Series 2,097,152-word x 64-bit High Density Dynamic RAM Module HITACHI Preliminary Description The HB56A264EJ belongs to 8 byte DIMM Dual In-line Memory Module family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications.
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HB56A264EJ
152-word
64-bit
16-Mbit
HM5117800BJ)
16-bit
74ABT16244)
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FLK012
Abstract: FLK012XP
Text: FLK012XP c?„. G a A s F E T a n d H E M T Chips r U J IlM J FEATURES • • • • High Output Power: P-|dB = 20.5dBm Typ. High Gain: G-j^B = 8.0dB(Typ.) High PAE: r iadd = 26%(Typ.) Proven Reliability DESCRIPTION The FLK012XP chip is a power GaAs FET that is designed for
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FLK012XP
FLK012XP
FLK012
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Untitled
Abstract: No abstract text available
Text: HB56A264EJ Series 2,097,152-word x 64-bit High Density Dynamic RAM Module HITACHI Preliminary Description The HB56A264EJ belongs to 8 byte DIMM Dual In-line Memory Module family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications.
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HB56A264EJ
152-word
64-bit
16-Mbit
HM5117800BJ)
16-bit
74ABT16244-)
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