FLR026XV
Abstract: No abstract text available
Text: FLR026XP, FLR026XV n eP ,. G a A s F E T a n d H E M T Chips r U J I 1b U FEATURES • High Output Power: P-|d B = 23.0dBm Typ. • High Gain: G 1dB = 7.5dB(Typ.)(FLR026XP) G 1dB = 8.5dB(Typ.)(FLR026XV) • High PAE: r\addl = 28%(Typ.)(FLR026XP) *ladd = 29%(Typ.)(FLR026XV)
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FLR026XP,
FLR026XV
FLR026XP)
FLR026XV)
FLR026XV
Temperatur51
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FLR026XV
Abstract: FLR026XP
Text: FLR026XP, FLR026XV p | ,<f° GaAs F E T and H E M T Chips rUJIIbU ,. FEATURES • High Output Power: P-|<jB = 23.0dBm Typ. • High Gain: G-j^B = 7.5dB(Typ.)(FLR026XP) G 1dB = 8.5dB(Typ.)(FLR026XV) • High PAE: n adc| = 28%(Typ.)(FLR026XP) il add = 29%(Typ.)(FLR026XV)
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FLR026XP,
FLR026XV
FLR026XP)
FLR026XV)
FLR026XV
FLR026XP
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Untitled
Abstract: No abstract text available
Text: F LR026XP ; F L R 0 2 6 X V GaAs F E T and M IM T Chips ELECTRICAL CHARACTERISTICCS Ambient Temperature Ta=25°C Item Symbol Saturated Drain Current >DSS Test Conditions Min. - 50 - mS -1.0 -2.0 -3.5 V -4 - - V 22 23 - dBm 6.5 7.5 - dB - 28 - % 22 23 - dBm
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LR026XP
18GHz
18GHz
25jim
FLR026XP
FLR026XV
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FLC301XP
Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171
Text: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 REQUIREMENTS Anti-static work surface Grounding cable and wrist Metal tweezers or vacuum Clean container to receive Binocular microscope with strap probe transferred chips
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FLC301XP
Abstract: fsx52 FUJITSU MICROWAVE XP 215 FLK202 FLC081XP FSX51 fsx51x FLC151XP FLC151
Text: GENERAL PURPOSE and POWER GaAs FET CHIPS Electrical Characteristics Ta = 25CC PidB TYP. (dB) GldB TYP. (dB) nadd TYP. (dB) f (GHz) Vd s (V) FLC081XP 28.5 7.0 31.5 8 10 180 XP FLC151XP 31.5 6.0 29.5 8 10 360 XP FLC301XP 34.8 9.5 37,0 4 10 720 XP •FSX017X
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FLC081XP
FLC151XP
FLC301XP
FSX017X
FSX51X
FSX52X
FLX252XV
FLK012XP
FLK022XV*
FLK052XV
FLC301XP
fsx52
FUJITSU MICROWAVE
XP 215
FLK202
FSX51
FLC151
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