208017
Abstract: No abstract text available
Text: HL6312G/13G ODE-208-017 Z Rev.0 Jul. 01, 2005 AlGaInP Laser Diodes Description The HL6312G/13G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. Wavelength is equal to He-Ne Gas laser. They are suitable as light sources in bar code readers, laser levelers and various other types
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HL6312G/13G
HL6312G/13G
ODE-208-017
HL6312G/13G:
HL6312G
HL6313G
208017
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HL6312G
Abstract: HL6313G Hitachi DSA00230
Text: HL6312G/13G AlGaInP Laser Diodes ADE-208-190G Z 8th Edition Dec. 2000 Description The HL6312G/13G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. Wavelength is equal to He-Ne Gas laser. They are suitable as light sources in bar code readers, laser
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HL6312G/13G
ADE-208-190G
HL6312G/13G
HL6312G/13G:
HL6312G
HL6312G
HL6313G
Hitachi DSA00230
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Untitled
Abstract: No abstract text available
Text: Data Sheet HL6312G AIGaInP Laser Diode 638nm/5mW Features: Outline • Visible light output:638nm Typ. Optical output power: 5mW CW Low operating voltage: 2.7V Max. Built-in photodiode for monitoring laser output TM mode oscillation Single transverse mode
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HL6312G
638nm/5mW
638nm
HL6312G
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Hitachi DSA002742
Abstract: No abstract text available
Text: HL6312G Red Laser Diode for Industry and Measurement Application Error! Not a valid filename. ADE-208-190 F Z 7th. Edition May 1997 Description • The HL6312G is a 0.63µm band AlGaInp laser diode with multi quantum well (MQW) structure. Wavelength is equal to He-Ne Gas laser. It is suitable as a light source in bar code readers, laser
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HL6312G
ADE-208-190
HL6312G
633nm
Rati4005-1835
D-85622
Hitachi DSA002742
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208017
Abstract: ODE-208-017 HL6312G HL6313G
Text: HL6312G/13G ODE-208-017 Z Rev.0 Jul. 01, 2005 AlGaInP Laser Diodes Description The HL6312G/13G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. Wavelength is equal to He-Ne Gas laser. They are suitable as light sources in bar code readers, laser levelers and various other types
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HL6312G/13G
ODE-208-017
HL6312G/13G
HL6312G/13G:
HL6312G
HL6313G
208017
ODE-208-017
HL6312G
HL6313G
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He-Ne Laser Power Supply circuits
Abstract: HL6312G HL6313G
Text: HL6312G/13G AlGaInP Laser Diodes ODE-208-190I Z Rev.9 Mar. 2005 Description The HL6312G/13G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. Wavelength is equal to He-Ne Gas laser. They are suitable as light sources in bar code readers, laser
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HL6312G/13G
ODE-208-190I
HL6312G/13G
HL6312G/13G:
HL6312G
HL6313G
He-Ne Laser Power Supply circuits
HL6312G
HL6313G
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HL6312G
Abstract: HL6313G
Text: HL6312G/13G AlGaInP Laser Diodes ODE-208-190H Z Rev.8 Jan. 2003 Description The HL6312G/13G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. Wavelength is equal to He-Ne Gas laser. They are suitable as light sources in bar code readers, laser
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HL6312G/13G
ODE-208-190H
HL6312G/13G
HL6312G/13G:
HL6312G
HL6313G
HL6312G
HL6313G
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Untitled
Abstract: No abstract text available
Text: HL6312G/13G ODE-208-017A Z Rev.1 Feb. 01, 2008 AlGaInP Laser Diodes Description The HL6312G/13G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. Wavelength is equal to He-Ne Gas laser. They are suitable as light sources in bar code readers, laser levelers and various other types
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HL6312G/13G
ODE-208-017A
HL6312G/13G
HL6312G/13G:
HL6312G
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Untitled
Abstract: No abstract text available
Text: HL6312G/13G ODE2008-00 M Rev.0 Aug. 01, 2008 AlGaInP Laser Diodes Description The HL6312G/13G are 0.63 m band AlGaInP laser diodes with a multi-quantum well (MQW) structure. Wavelength is equal to He-Ne Gas laser. They are suitable as light sources in bar code readers, laser levelers and various other types
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HL6312G/13G
HL6312G/13G
ODE2008-00
HL6312G/13G:
HL6312G
HL6313G
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Untitled
Abstract: No abstract text available
Text: HL6312/13G AlGaInP Laser Diodes Description The HL6312/13G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well MQW structure. Wavelength is equal to He-Ne Gas laser. They are suitable as light sources in bar code readers , laser levelers and various other types of optical equipment. Hermetic sealing of the package achieves high
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HL6312/13G
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HL6313G
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7054F
Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
Text: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver
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2sc4537
2sc454.
2sc4591
2sc4592
2sc4593
2sc460.
2sc4628
2sc4629
2sc4643
2sc4680
7054F
BC564A
HA13563
AC123A
HITACHI microcontroller H8 534 manual
IC 74LS47
AC538
BC245A
2SK3235
HA13557
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opnext
Abstract: HL1359CP laser diode bare chip 1550 DFB laser bare die HL1357CP HL1511AF HL1513AF laser diode for optical communication Laser Diode 1550 nm dBm dfb 10g
Text: Opnext leads the way in the growing field of optics, with a combination of experience and vision. In this new era of light, with a focus on quality optical technologies, Opnext offers unique leading edge optodevices in such areas as fiber-optic communications, optical storage, and measuring
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D-85622
opdb-090103
opnext
HL1359CP
laser diode bare chip 1550
DFB laser bare die
HL1357CP
HL1511AF
HL1513AF
laser diode for optical communication
Laser Diode 1550 nm dBm
dfb 10g
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biconvex lens with focal length 1 m and diameter 25.4 mm
Abstract: laser diode DVD 100mw DL-3147-011 laser diode toshiba 780nm 650nm laser diode 200mw TOLD9225M mitsubishi laser diode OPHIR pd200 collimated LED 670 nm DL3147-011
Text: Laser Diodes, Optics, and Related Components - Optima Laser Diodes Laser Diode Mounting Kits Laser Diode Optics Glass Aspheric Lenses Plastic Aspheric Lenses Multi-element Lenses Diode Laser Modules OEM Diode Laser Modules Collimated Diode Lasers Optical Power
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658nm
ML1016R
685nm
ML1012R
785nm
ML64114R
Revised11JUN99
biconvex lens with focal length 1 m and diameter 25.4 mm
laser diode DVD 100mw
DL-3147-011
laser diode toshiba 780nm
650nm laser diode 200mw
TOLD9225M
mitsubishi laser diode
OPHIR pd200
collimated LED 670 nm
DL3147-011
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HL6312G
Abstract: 1550 laser diode infrared Laser diode 336-1027-785 Laser Diode Mounts 300-0380-780 lens for laser diode lens laser diode Aspheric Lens TO Can Optima Precision
Text: Laser Diode Mounting Kits For Ø5.6mm and Ø9mm Laser Diodes — Complete Mounting System with Collimating Lens If your work involves laser diodes, you’ll appreciate the benefits of Optima’s laser diode mounting systems. Components in the system facilitate mounting a laser diode, collimating or focusing the beam, and aligning the beam
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HL6312G
01JAN01
HL6312G
1550 laser diode
infrared Laser diode
336-1027-785
Laser Diode Mounts
300-0380-780
lens for laser diode
lens laser diode
Aspheric Lens TO Can
Optima Precision
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HL6312G
Abstract: HL6335G HL6336G Hitachi DSA0064
Text: HL6335G/36G Circular Beam Low Operating Current ADE-208-1419C Z Rev.3 Mar. 2002 Description The HL6335/36G are 0.63 µm band AlGaInP laser diodes can be operated with low operating current. These products were designed by self aligned refractive index (SRI) active layer structure. These are
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ADE-208-1419C
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HL6335/36G:
D-85622
D-85619
HL6312G
HL6335G
HL6336G
Hitachi DSA0064
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hitachi DC9300
Abstract: 1550nm Laser Diode with butterfly pin package DC9300 1550nm Laser Diode butterfly hitachi HL7851G DR9301 780nm 10mW laser diodes LB7671 RCV5932 laser DFB 1550nm 10mW
Text: C 1998 Dirk Plha HITACHI OPTOELECTRONIC DEVICES HITACHI OPTODEVICES • Industrial and Information Laser Diodes For laser levellers, alignment systems, bar code readers, distance measurement and optical storage, Hitachi offers a complete line-up of 635nm to 830nm laser diodes
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635nm
830nm
HE7601
HE8404
HE8807
HE8811
HE8812
HE7601SG
HE8404SG
hitachi DC9300
1550nm Laser Diode with butterfly pin package
DC9300
1550nm Laser Diode butterfly
hitachi HL7851G
DR9301
780nm 10mW laser diodes
LB7671
RCV5932
laser DFB 1550nm 10mW
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650nm 50mw
Abstract: 780nm 5MW infrared laser diodes photo magneto electric camera hitachi HL6738 laser diode DVD 780nm 10mW laser diodes Hitachi DSAUTAZ005 ld261 PO40
Text: ADE-508-011C Information and Industry Laser Diodes Information and Industry Laser Diodes Application Note Publication Date: 1st Edition, June 1996 4th Edition, February 1999 Published by: Electronic Devices Sales & Marketing Group Semiconductor & Integrated Circuits
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HL8325G
650nm 50mw
780nm 5MW infrared laser diodes
photo magneto electric
camera hitachi
HL6738
laser diode DVD
780nm 10mW laser diodes
Hitachi DSAUTAZ005
ld261
PO40
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LD5033
Abstract: opnext HL6366DG opnext l HL8340MG A 785nm HL6545MG 660nm 100mw HL8341MG HL6313G
Text: Optodevices Opnext Lights It Up Opnext is paving the way to a future of exciting laser developments and ground breaking applications. Our industry heritage, future-focused thinking and deep commitment to research and development help us anticipate and meet
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LD5033
opnext
HL6366DG
opnext l
HL8340MG A
785nm
HL6545MG
660nm 100mw
HL8341MG
HL6313G
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Hitachi DSA00280
Abstract: No abstract text available
Text: HL6340MG/41MG Circular Beam Low Operating Current ADE-208-1437B Z Rev.2 Mar. 2002 Description The HL6340MG/41MG are 0.63 µm band AlGaInP laser diodes can be operated with low operating current. These products were designed by self aligned refractive index (SRI) active layer structure. These
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ADE-208-1437B
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HL6340MG/41MG:
HL6340MG
Hitachi DSA00280
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HL7806
Abstract: 6808X L7851 hl7852 HL6411G HL8325G hitachi HL7852 hl7806g HL7851
Text: Product Lineup W avelength Visible and infrared laser diodes 633 nm O ptical output 3 mW Internal circuit Part num ber Main application LD ^P * HL6314M G HL6316G HL6411G* Pointer HL6315G f Pointer HL6312G Bar code reader H L 6313G t Bar code reader HL6720G
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HL6314M
HL6316G
HL6411G*
HL6315G
HL6312G
6313G
HL6720G
HL6724M
HL6712G
HL6722G
HL7806
6808X
L7851
hl7852
HL6411G
HL8325G
hitachi HL7852
hl7806g
HL7851
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Untitled
Abstract: No abstract text available
Text: HL6312G Red Laser Diode for Industry and Measurement Application Error! Not a valid filename. ADE-208-190 F Z 7th. Edition May 1997 Description • The HL6312G is a 0.63|im band AlGalnp laser diode with multi quantumwell (MQW) structure. Wavelength is equal to He-Ne Gas laser. It is suitable as a light source in barcode readers, laser
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HL6312G
ADE-208-190
HL6312G
633nm
10pes
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Untitled
Abstract: No abstract text available
Text: HL6312G AIGalnP LD Description H L 6 3 1 2 G is a 0 .6 3 p m A IG a ln P la se r d io d e w ith a m u lti-q u a n tu m w ell M Q W stru c tu re . W a v e le n g th is e q u a l to H e -N e G a s laser. It is s u ita b le as a lig h t s o u rc e fo r b a r c o d e re a d e rs, la s e r le v e le rs an d v a rio u s o th e r
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HL6312G
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Untitled
Abstract: No abstract text available
Text: HL6312/13G AlGalnP Laser Diodes HITACHI February 1997 Description The HL6312/13G are 0.63 Am band AlGalnP laser diodes with a multi-quantum well (MQW structure. Wavelength is equal to He-Ne Gas laser. They are suitable as light sources in bar code readers, laser
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HL6312/13G
HL6312/13G
HL6312/13G:
HL6312G
HL631h
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Untitled
Abstract: No abstract text available
Text: HL6312/13G AIGalnP Laser Diodes Description The H L6312/13G are 0.63 ¿im band A IG alnP laser diodes w ith a m ulti-quantum w ell M Q W structure. W avelength is equal to H e-N e G as laser. T hey are suitable as light sources in b ar code readers . laser
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HL6312/13G
HL6312G/HL6313G
HL6312/13G:
HL6312G
HL6313G
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