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    10N10 Price and Stock

    STMicroelectronics STH310N10F7-2

    MOSFET N-CH 100V 180A H2PAK-2
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    DigiKey STH310N10F7-2 Reel 5,000 1,000
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    STH310N10F7-2 Cut Tape 1,996 1
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    Avnet Americas STH310N10F7-2 Reel 5,000 26 Weeks 1,000
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    Mouser Electronics STH310N10F7-2 10,996
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    STMicroelectronics STH310N10F7-2 10,996 1
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    Bristol Electronics STH310N10F7-2 5,000
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    STH310N10F7-2 1,558
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    Avnet Silica STH310N10F7-2 1,000 17 Weeks 1,000
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    Chip1Stop STH310N10F7-2 2,000
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    STH310N10F7-2 Cut Tape 800
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    ROHM Semiconductor RSR010N10HZGTL

    MOSFET N-CH 100V 1A TSMT3
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    DigiKey RSR010N10HZGTL Reel 3,000 3,000
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    RSR010N10HZGTL Cut Tape 1,362 1
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    Chip1Stop RSR010N10HZGTL Cut Tape 2,425
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    CoreStaff Co Ltd RSR010N10HZGTL 2,665
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    KORATECH 000A0010N100L0502J

    10N*100mm*0.5P*P6 Kora-flex FFC
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    DigiKey 000A0010N100L0502J Bag 1,000 1
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    KORATECH 000A0010N100L1001J

    10N*100mm*1.0P*P7 Kora-flex FFC
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    DigiKey 000A0010N100L1001J Bag 1,000 1
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    KORATECH 000A0010N100L1252J

    10N*100mm*1.25P*P6 Kora-flex FFC
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    DigiKey 000A0010N100L1252J Ammo Pack 1,000 1
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    Find more 10N10 price and stock on Findchips.com

    10N10 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    10N10 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    10N10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    10N100D

    Abstract: DSA003705
    Text: Advance Technical Information High Voltage MOSFET N-Channel, Depletion Mode VDSS = 1000 V = 10 A ID25 RDS on = 1.4 Ω IXTH 10N100D IXTT 10N100D TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 1000 V VDGX TJ = 25°C to 150°C


    Original     		PDF 10N100D 10N100D O-247 O-247 O-268 O-268 DSA003705

    10N100

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 12N100Q ISOPLUS247TM Q CLASS VDSS ID25 1000 V 10 A IXFR 10N100Q 1000 V 9A Electrically Isolated Back Surface trr £ 200 ns RDS(on) 1.05 W 1.20 W N-Channel Enhancement Mode Avalanche Rated, High dV/dt


    Original     		PDF 12N100Q ISOPLUS247TM 10N100Q 12N100 10N104 IXFR10N100 IXFR12N100 10N100

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFR ISOPLUS247TM Q CLASS VDSS ID25 RDS on 12N100Q 1000 V 10 A IXFR 10N100Q 1000 V 9A (Electrically Isolated Back Surface) trr ≤ 300 µs 1.1 Ω 1.20 Ω N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances


    Original     		PDF ISOPLUS247TM 12N100Q 10N100Q 12N100S IXFR10N100 IXFR12N100 IXFH12N100Q 728B1

    IXFH12N100Q

    Abstract: 10N100 6a diode 12N100Q IXFR12N100
    Text: HiPerFETTM Power MOSFETs IXFR ISOPLUS247TM Q CLASS VDSS ID25 RDS on 12N100Q 1000 V 10 A IXFR 10N100Q 1000 V 9A (Electrically Isolated Back Surface) trr ≤ 300 µs 1.1 Ω 1.20 Ω N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances


    Original     		PDF ISOPLUS247TM 12N100Q 10N100Q 12N100 10N100 10N1IS IXFR10N100 IXFH12N100Q 10N100 6a diode IXFR12N100

    13N100

    Abstract: 10N100 13n10
    Text: HiPerFETTM Power MOSFETs VDSS IXFH / IXFM 10N100 IXFH / IXFM 12N100 IXFH 13N100 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM


    Original     		PDF 10N100 12N100 13N100 13N100 10N100 13n10

    10N10

    Abstract: P-TO252 SPD10N10 SPU10N10
    Text: SPD 10N10 Preliminary Data SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS 100 V • Drain-Source on-state resistance RDS on 0.2 Ω Continuous drain current ID 10 A Enhancement mode • Avalanche rated • dv/dt rated


    Original     		PDF 10N10 SPD10N10 P-TO252 Q67040-S4119 SPU10N10 P-TO251 Q67040-S4111-A2 10N10 P-TO252 SPD10N10 SPU10N10

    10N100F

    Abstract: 10n100 98934
    Text: VDSS HiPerFETTM Power MOSFETs IXFR ISOPLUS247TM ID25 RDS on 12N100F 1000 V 10 A IXFR 10N100F 1000 V 9A F-Class: MegaHertz Switching trr ≤ 250 ns (Electrically Isolated Back Surface) 1.05 Ω 1.20 Ω N-Channel Enhancement Mode Avalanche Rated, High dV/dt


    Original     		PDF ISOPLUS247TM 12N100F 10N100F IXFR10N100 IXFR12N100 728B1 10n100 98934

    Untitled

    Abstract: No abstract text available
    Text: MegaMOSTMFET IXTH / IXTM 10N100 IXTH / IXTM 12N100 VDSS ID25 RDS on 1000 V 1000 V 10 A 12 A 1.20 Ω 1.05 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V


    Original     		PDF 10N100 12N100 O-247 O-204

    10n10

    Abstract: P-TO252 SPD10N10 SPU10N10 658G
    Text: Preliminary Data SPD 10N10 SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS 100 V • Drain-Source on-state resistance RDS on 0.2 Ω Continuous drain current ID 10 A Enhancement mode • Avalanche rated • dv/dt rated


    Original     		PDF 10N10 SPD10N10 P-TO252 Q67040-S4119-A2 SPU10N10 P-TO251 Q67040-S4111-A2 10n10 P-TO252 SPD10N10 SPU10N10 658G

    10N100

    Abstract: transistor ixth 12N100 N100 transistor N100
    Text: MegaMOSTMFET IXTH / IXTM 10N100 IXTH / IXTM 12N100 VDSS ID25 RDS on 1000 V 1000 V 10 A 12 A 1.20 Ω 1.05 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V


    Original     		PDF 10N100 12N100 O-247 O-204 10N100 transistor ixth 12N100 N100 transistor N100

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 12N100Q ISOPLUS247TM Q CLASS VDSS ID25 1000 V 10 A IXFR 10N100Q 1000 V 9A Electrically Isolated Back Surface trr £ 200 ns RDS(on) 1.05 W 1.20 W N-Channel Enhancement Mode Avalanche Rated, High dV/dt


    Original     		PDF 12N100Q ISOPLUS247TM 10N100Q 12N100 10N100 10N100 IXFR10N100

    10n10

    Abstract: No abstract text available
    Text: Preliminary Data SPD 10N10 SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS 100 V • Drain-Source on-state resistance RDS on 0.2 Ω Continuous drain current ID 10 A Enhancement mode • Avalanche rated • dv/dt rated


    Original     		PDF 10N10 SPD10N10 SPU10N10 PG-TO252 PG-TO251 Q67040-S4119-A2 Q67040-S4111-A2 10n10

    10N100

    Abstract: 12n100 D-68623 IXYS SEMICONDUCTOR IXYS 120
    Text: IXFH 10N100 IXFH 12N100 VDSS HiPerFETTM Power MOSFETs IXFM 10N100 IXFM 12N100 ID25 IXFH/FM 10N100 1000 V 10 A IXFH/FM 12N100 1000 V 12 A RDS on trr 1.20 Ω 1.05 Ω 250 ns 250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family TO-247 AD (IXFH)


    Original     		PDF 10N100 12N100 10N100 12N100 O-247 D-68623 IXYS SEMICONDUCTOR IXYS 120

    10N100

    Abstract: 12n100 N100
    Text: HiPerFETTM Power MOSFETs VDSS IXFH/IXFM 10 N100 IXFH/IXFM 12 N100 1000 V 1000 V Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 1000 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 T C = 25°C


    Original     		PDF 10N100 12N100 10N100 12n100 N100

    Untitled

    Abstract: No abstract text available
    Text: □IXYS Advanced Technical Information HiPerFET Power MOSFETs ISOPLUS247™ Q CLASS ix f r DSS D 25 10 A 12N100Q 1000 V IXFR 10N100Q 1000 V 9A Electrically Isolated Back Surface t rr < 200 ns D S (on) 1.05 Q 1.20 Q N-Channel Enhancement Mode Avalanche Rated, HighdV/dt


    OCR Scan     		PDF ISOPLUS247â 12N100Q 10N100Q 12N100 10N100 IXFR10N100

    IRF520

    Abstract: IRF120 10n10 circuit diagram irf520 mtp10n10 irf5205 MTP10N08 IRF121 IRF122 IRF123
    Text: — = = ^ - = fl4 D Ë f â 4b*11,74 Q0E?aS 4 □ 3469674 FAIRCHILD SEMICONDUCTOR 84D 2 7 85 4 D IRF120-123/IRF520-523 MTP10N08/10N10 N-Channel Power M O SFET s, 11 A, 60-100 V F A IR C H IL D A Schlumberger Company Power And Discrete Division Description


    OCR Scan     		PDF IRF120-123/IRF520-523 MTP10N08/10N10 O-220AB IRF120 IRF121 IRF122 IRF123 IRF520 IRF521 MTP10N08/10N10 IRF520 10n10 circuit diagram irf520 mtp10n10 irf5205 MTP10N08 IRF123

    ixgh 1500

    Abstract: 40N60A 25N120 200n60 60n60 igbt smd 30n60 10N60A 30N60A .25N100 20n60a
    Text: Insulated Gate Bipolar Transistors IGBT G series with high gain V•CSS : ■■ Type . TJm = 15° CC > New ► IXGA IXGH IXGH IXGH IXGH IXGH IXGH IXGH 10N60 10N60 20N60 31N60 30N60 38N60 40N60 60N60 IXGH 10N100 >■ IXGA 12N100 > IXGH 12N100 > ► >•


    OCR Scan     		PDF 10N60 20N60 31N60 30N60 38N60 40N60 60N60 32N60BS 40N60A ixgh 1500 25N120 200n60 60n60 igbt smd 10N60A 30N60A .25N100 20n60a

    Untitled

    Abstract: No abstract text available
    Text: □IXYS IXFH 10N100 IXFH 12N100 HiPerFET Power MOSFETs IXFH/FM 10N 100 IXFH/FM 12N100 IXFM 10N100 IXFM 12N100 ^DSS 1000 V 1000 V ^D25 10 A 12 A D DS on 1.20 a 1.05 a K 250 ns 250 ns N-Channel Enhancement Mode High dv/dt, Low t , HDMOS™ Family Symbol


    OCR Scan     		PDF 10N100 12N100

    10N100E

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by M TW 10N100E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TW 10N 100E TMOS E-FET ™ Power Field Effect Transistor T O -2 4 7 w ith Isolated Mounting Hole Motorola Preferred Device TMOS POWER FET 10 AMPERES


    OCR Scan     		PDF 10N100E/D 340K-01 10N100E

    XC+872

    Abstract: No abstract text available
    Text: SPD 10N10 Inf i ne on technologies Preliminary Data SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS 100 V • Enhancement mode Drain-Source on-state resistance ñ DS on1 0.2 Q. • Avalanche rated Continuous drain current


    OCR Scan     		PDF 10N10 11-A2 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T XC+872

    ixth12n100

    Abstract: 12n100 3055P
    Text: n ix Y S MegaMOS FET IXTH / IXTM 10N100 IXTH / IXTM 12N100 VDSS ^D25 1000 V 1000 V 10 A 12 A p DS on 1.20 Q 1.05 Q N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings V DSS T0 =25°Cto150°C 1000 V VDGR Tj = 25° C to 150° C; RGS= 1 Mi2 1000


    OCR Scan     		PDF 10N100 12N100 Cto150 O-247AD O-204 O-204 ixth12n100 3055P

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS Low VCE sal IGBT with Diode High speed IGBT with Diode IXGH 10 N100U1 IXGH 10 N100AU1 V CES ^C25 V CE(sat) 1000 V 1000 V 20 A 20 A 3.5 V 4.0 V Combi Packs Symbol Test Conditions vw CES T, = 25°C to 150°C 1000 V V CGR Tj = 25°C to 150°C; RaE = 1 M£2


    OCR Scan     		PDF N100U1 N100AU1 O-247 10N100U1 10N100AU1 4bflb22b

    10N100

    Abstract: No abstract text available
    Text: DIXYS Low VCE 6al IGBT High speed IGBT 10N100 10N100A V y c es ^C25 v CE (sat) 1000 V 1000 V 20 A 20 A 3.5 V 4.0 V Ae Sym bol Test Conditions Maximum Ratings V ces T, = 25“C t o 150°C 1000 V co„ ^ = 25“C to 150“C; RaE = 1 M£2 1000 V VGEs


    OCR Scan     		PDF IXGH10N100 IXGH10N100A O-247 10N100A 10N100A 10N100 10N100U1 10N100AU1

    MTM40N20

    Abstract: MTM8N18 MTM45N12 MTM45N15 MTM40N18 IRF233 MTM8N10 MTM20N10 IRF240 IRF252
    Text: POWER TRANSISTORS — TMOS METAL continued Metal TMOS Power MOSFETs — TO-204AA (continued) CASE 1-04 and CASE 1-05 V b R(DSS) (Volts) Min (Ohms) Max (Amp) 200 0.18 10 0.16 7.5 0.12 16 Pd <“•Tc = 25°C (Wans) Max IRF240 • 18 125 M TM 15N 20 • 15


    OCR Scan     		PDF O-204AA IRF240 MTM15N20 IRF252Â IRF250Â MTM40N20 MTM5N18 MTM5P18* MTM7N18 MTM8P18* MTM8N18 MTM45N12 MTM45N15 MTM40N18 IRF233 MTM8N10 MTM20N10 IRF240 IRF252