R7600-M64
Abstract: S10362-11-100C circuit diagram of a laser lighter
Text: NEWS 02 2008 SOLID STATE PRODUCTS PAGE 9 New Si PIN photodiodes S10783 and S10784 SOLID STATE PRODUCTS Red LED for POF Data Communications PAGE 10 ELECTRON TUBE PRODUCTS 75W Xenon Lamp Series PAGE 28 SYSTEMS PRODUCTS Cooled CCD Camera ORCA-R2 PAGE 38 Highlights
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S10783
S10784
P2211
DE128228814
R7600-M64
S10362-11-100C
circuit diagram of a laser lighter
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SM-1994
Abstract: No abstract text available
Text: HY62UF16200/ HY62QF16200/ HY62EF16200/ HY62SF16200 Series 128Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16200 / HY62QF16200 / HY62EF16200 / HY62SF16200 is a high speed, super low power and 2M bit full CMOS SRAM organized as 131,072 words by 16bits. The
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HY62UF16200/
HY62QF16200/
HY62EF16200/
HY62SF16200
128Kx16bit
HY62UF16200
HY62QF16200
HY62EF16200
16bits.
SM-1994
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da53
Abstract: DB26 DL010
Text: RAMBUS Direct RDRAM Preliminary Information 256/288-Mbit 1Mx16/18x16d Overview The Rambus Direct RDRAM™ is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application
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256/288-Mbit
1Mx16/18x16d)
256/288-Mbit
600MHz
800MHz
DL0105
DL0105
da53
DB26
DL010
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Untitled
Abstract: No abstract text available
Text: PF805-05 SRM20V100LLMX7/SLMX7 1M-Bit Static RAM ge lta o V n w tio Lo pera cts O odu Pr ● Low Supply Voltage ● Wide Temperature Range ● Low Supply Current ● Access Time 70ns 2.7V ● 131,072 Wordsx8-bit Asynchronous • DESCRIPTION The SRM20V100LLMX7 / SLMX7 is an 131,072 wordsx8-bit asynchronous, static, random access memory on a
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PF805-05
SRM20V100LLMX7/SLMX7
SRM20V100LLMX7
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K4R761869A-GCT9
Abstract: K4R761869A K4R761869A-FCM8 K4R761869A-FCT9 K4R761869A-GCM8 K4R761869A-GCN1
Text: Direct RDRAM K4R761869A 576Mbit RDRAM A-die 1M x 18bit x 32s banks Direct RDRAMTM Version 1.41 January 2004 Page -1 Version 1.41 Jan. 2004 Direct RDRAM™ K4R761869A Change History Version 1.4( Sept. 2003) - First Copy ( Version 1.4 is named to unify the version of component and device operation datasheets)
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K4R761869A
576Mbit
18bit
256/288Mb
K4R761869A-GCT9
K4R761869A
K4R761869A-FCM8
K4R761869A-FCT9
K4R761869A-GCM8
K4R761869A-GCN1
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S25FL129
Abstract: S98GL064NB0 S98GL064 s29gl256p90 S70FL256 S98GL064NB s71vs128 S25FL129P WSON 6x8 S25FL032K
Text: Spansion Product Selector Guide Embedded and Mobile Applications Portfolio March 2011 Spansion ® Products Portfolio . Automotive . Consumer electronics . Gaming . Industrial equipment . Machine-to-Machine Spansion offers a wide range of NOR Flash memory solutions in multiple voltages,
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128Mb
256Mb
512Mb
1-866-SPANSION
43715B
S25FL129
S98GL064NB0
S98GL064
s29gl256p90
S70FL256
S98GL064NB
s71vs128
S25FL129P
WSON 6x8
S25FL032K
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Untitled
Abstract: No abstract text available
Text: HY62UF16400A/ HY62QF16400A/ HY62EF16400A/ HY62SF16400A Series 256Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16400A / HY62QF16400A / HY62EF16400A / HY62SF16400A is a high speed, super low power and 4Mbit full CMOS SRAM organized as 262,144 words by 16bits. The
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HY62UF16400A/
HY62QF16400A/
HY62EF16400A/
HY62SF16400A
256Kx16bit
HY62UF16400A
HY62QF16400A
HY62EF16400A
16bits.
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Untitled
Abstract: No abstract text available
Text: MBM27C1001-20 1/2 IL00 * C-MOS 1M(131072x8)-BIT EPROM -TOP VIEW- 1 VPP VDD (+5V) 32 12 11 10 A16 IN 2 31 PGM IN 9 8 A15 IN 3 NC 30 7 6 A12 IN 4 29 A14 IN A7 IN 5 28 A13 IN 5 27 26 23 A6 IN 6 27 A8 IN 25 4 A5 IN 7 26 A9 IN 28 29 A4 IN 8 25 A11 IN
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MBM27C1001-20
A2-A16
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HY62QF16200A
Abstract: No abstract text available
Text: HY62UF16200A/ HY62QF16200A/ HY62EF16200A/ HY62SF16200A Series 128Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16200A / HY62QF16200A / HY62EF16200A / HY62SF16200A is a high speed, super low power and 2Mbit full CMOS SRAM organized as 131,072 words by 16bits. The
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HY62UF16200A/
HY62QF16200A/
HY62EF16200A/
HY62SF16200A
128Kx16bit
HY62UF16200A
HY62QF16200A
HY62EF16200A
16bits.
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Untitled
Abstract: No abstract text available
Text: HY62UF16400/ HY62QF16400/ HY62EF16400/ HY62SF16400 Series 256Kx16bit full CMOS SRAM PRELIMINARY FEATURES DESCRIPTION • Fully static operation and Tri-state output • TTL compatible inputs and outputs • Battery backup LL/SL-part - 1.5V(min) data retention
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HY62UF16400/
HY62QF16400/
HY62EF16400/
HY62SF16400
256Kx16bit
HY62UF16400
HY62QF16400
HY62EF16400
16bits.
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Atmel 652
Abstract: AT65609EHV AT65609EHV-DJ40SR Atmel+652
Text: AT65609EHV Rad Hard, 5V, 128K x 8 Very Low Power CMOS SRAM DATASHEET Features z Asynchronous SRAM z Operating Voltage: 5V z Read Access Time: 40 ns z Write Cycle Time: 30 ns z Very Low Power Consumption Pre-RAD z z Active: 275 mW (Max) Standby: 44 mW (Max)
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AT65609EHV
MIL-PRF38535
M65608E
Atmel 652
AT65609EHV
AT65609EHV-DJ40SR
Atmel+652
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Untitled
Abstract: No abstract text available
Text: [AK4137] = Preliminary = AK4137 32bit SRC with PCM/DSD conversion 1. General Description The AK4137 is a 2ch digital sample rate converter SRC . The input sample rate ranges from 8kHz to 768kHz. The output sample rate is from 8kHz to 768kHz. The AK4137 has an internal Oscillator.
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AK4137]
AK4137
32bit
AK4137
768kHz.
768kHz
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XOP1
Abstract: 256-288 MBit Direct RDRAM K4R761869A-FCM8 K4R761869A-FCT9
Text: Preliminary Direct RDRAM K4R521669A/K4R761869A 512/576Mbit RDRAM A-die 1M x 16/18bit x 32s banks Direct RDRAMTM Version 1.4 July 2002 Page -1 Version 1.4 July 2002 Preliminary Direct RDRAM™ K4R521669A/K4R761869A Change History Version 1.4( July 2002) - Preliminary
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K4R521669A/K4R761869A
512/576Mbit
16/18bit
256/288Mb
Table19
XOP1
256-288 MBit Direct RDRAM
K4R761869A-FCM8
K4R761869A-FCT9
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Untitled
Abstract: No abstract text available
Text: CONFIDENTIAL = Preliminary = [AK4137] AK4137 32bit SRC with PCM/DSD conversion 1. 概 要 AK4137 は 2ch のディジタルサンプルレートコンバータ（SRC）です。入力された 8kHz～768kHz の 範囲にあるサンプルレートのオーディオソースを 8kHz～768kHz のサンプルレートに変換して出力し
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AK4137]
AK4137
32bit
768kHz
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Untitled
Abstract: No abstract text available
Text: HY62UF16401A/ HY62QF16401A/ HY62EF16401A/ HY62SF16401A Series 256Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16401A / HY62QF16401A / HY62EF16401A / HY62SF16401A is a high speed, super low power and 4Mbit full CMOS SRAM organized as 262,144 words by 16bits. The
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HY62UF16401A/
HY62QF16401A/
HY62EF16401A/
HY62SF16401A
256Kx16bit
HY62UF16401A
HY62QF16401A
HY62EF16401A
16bits.
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SRM20V100LLKT7
Abstract: SRM20V100LLMT7 SRM20V100LLRT7 SRM20V100LLTT7 SRM20V100LLYT7 SRM20V100SLKT7 SRM20V100SLMT7 SRM20V100SLRT7 SRM20V100SLTT7 YT SOP6
Text: PF863-03 SRM20V100LLMT7/SLMT7 1M-Bit Static RAM ge lta o V n w tio Lo pera cts O odu Pr ● Low Supply Voltage ● Wide Temperature Range ● Low Supply Current ● Access Time 70ns 2.7V ● 131,072 Wordsx8-Bit Asynchronous • DESCRIPTION The SRM20V100LLMT7/SLMT7 is an 131,072 words×8-bit asynchronous, static, random access memory on a
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PF863-03
SRM20V100LLMT7/SLMT7
SRM20V100LLMT7/SLMT7
SRM20V100LLKT7
SRM20V100LLMT7
SRM20V100LLRT7
SRM20V100LLTT7
SRM20V100LLYT7
SRM20V100SLKT7
SRM20V100SLMT7
SRM20V100SLRT7
SRM20V100SLTT7
YT SOP6
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K4R521669A
Abstract: No abstract text available
Text: K4R521669A /K4R761869A for short channel 1066 MHz Preliminary Direct RDRAM 512/576Mbit RDRAM A-die 1M x 16/18bit x 32s banks Short channel Direct RDRAMTM Version 1.4 July 2002 Page -1 Version 1.4 July 2002 K4R521669A /K4R761869A for short channel 1066 MHz
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K4R521669A
/K4R761869A
512/576Mbit
16/18bit
256/288Mb
Table19
K4R521669A
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SRM20V100LLKX7
Abstract: SRM20V100LLMX7 SRM20V100LLRX7 SRM20V100LLTX7 SRM20V100LLYX7
Text: PF805-04 SRM20V100LLMX77 SRM20V100LLMX 1M-Bit Static RAM ge lta Vo ion w t Lo pera cts O odu Pr ● Low Supply Voltage ● Wide Temperature Range ● Low Supply Current ● Access Time 70ns 2.7V ● 131,072 Wordsx8-Bit Asynchronous • DESCRIPTION The SRM20V100LLMX 7 is an 131,072 words×8-bit asynchronous, static, random access memory on a monolithic
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PF805-04
SRM20V100LLMX7
SRM20V100LLMX
SRM20V100LLKX7
SRM20V100LLMX7
SRM20V100LLRX7
SRM20V100LLTX7
SRM20V100LLYX7
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K4R761869A
Abstract: K4R761869A-FCM8 K4R761869A-FCT9
Text: Direct RDRAM K4R761869A 576Mbit RDRAM A-die 1M x 18bit x 32s banks Direct RDRAMTM Version 1.4 September 2003 Page -1 Version 1.4 Sept. 2003 Direct RDRAM™ K4R761869A Change History Version 1.4( Sept. 2003) - First Copy ( Version 1.4 is named to unify the version of component and device operation datasheets)
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K4R761869A
576Mbit
18bit
256/288Mb
K4R761869A-
K4R761869A
K4R761869A-FCM8
K4R761869A-FCT9
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S25FL256
Abstract: S25FL512 S98GL064 S25FL256* spansion S98GL064NB S98GL064NB0 S25FL204 s25fl128s S25FL129 S25FL032K
Text: Spansion Product Selector Guide April 2012 Spansion ® Products Portfolio Spansion offers a wide range of NOR Flash memory solutions in multiple voltages, densities and packages expressly designed and optimized for embedded and mobile applications, including:
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128Mb
256Mb
512Mb
43715C
S25FL256
S25FL512
S98GL064
S25FL256* spansion
S98GL064NB
S98GL064NB0
S25FL204
s25fl128s
S25FL129
S25FL032K
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K4R761869A
Abstract: K4R761869A-FCM8 K4R761869A-FCT9 K4R761869A-GCM8 K4R761869A-GCN1 K4R761869A-GCT9
Text: Direct RDRAM K4R761869A 576Mbit RDRAM A-die 1M x 18bit x 32s banks Direct RDRAMTM Version 1.41 January 2004 Page -1 Version 1.41 Jan. 2004 Direct RDRAM™ K4R761869A Change History Version 1.4( Sept. 2003) - First Copy ( Version 1.4 is named to unify the version of component and device operation datasheets)
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K4R761869A
576Mbit
18bit
256/288Mb
K4R761869A
K4R761869A-FCM8
K4R761869A-FCT9
K4R761869A-GCM8
K4R761869A-GCN1
K4R761869A-GCT9
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UAA 1006
Abstract: No abstract text available
Text: 浜松ホトニクスの HOT な情報マガジン［ハマホット］ 2010 夏 vol.6 発行元 〒430-8587 静岡県浜松市中区砂山町325-6 日本生命浜松駅前ビル TEL：053-452-2141 FAX：053-456-7889 jp.hamamatsu.com キリトリ線 2009年12月 代表取締役社長就任
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27HC128
Abstract: 27HC128-45 27HC128-55 direct replacement
Text: 27HC128 O.T.P. One Time Programmable 128K 16K X 8 EPROMs Preliminary Specification Application Specific Products DESCRIPTION FEATURES The 27HC128 CMOS, O.T.P. EPROM is a high-speed electrically programmable Read Only Memory. It is organized as 16,384 words of 8 bits and operates
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27HC128
-100mA.
cL-30pF,
27HC128-45
27HC128-55
27HC128-45
27HC128-55
direct replacement
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Untitled
Abstract: No abstract text available
Text: TC55V1001 FI/FTI/TRI/STI/SRI-85L,-10L TO SHIBA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55V1001FI/FTI/TRI/STI/SRI is a 1,048,576-bit static random access memory SRAM organized as 131,072 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device
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TC55V1001
FI/FTI/TRI/STI/SRI-85L
072-WORD
TC55V1001FI/FTI/TRI/STI/SRI
576-bit
32-P-0820-0
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