29F100T
Abstract: 1 MEGA OHM RESISTOR MX29F100T 29f100
Text: MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 40mA maximum active current 5MHz
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MX29F100T/B
128Kx8/64Kx16]
131072x8/
65536x16
55/70/90/120ns
16K-Bytex1,
32K-Bytex1,
64K-Byte
DEC/21/1999
JUN/14/2001
29F100T
1 MEGA OHM RESISTOR
MX29F100T
29f100
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MX29F100T
Abstract: No abstract text available
Text: INDEX ADVANCED INFORMATION MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 30mA maximum active current
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MX29F100T/B
128Kx8/64Kx16]
131072x8/
65536x16
55/70/90/120ns
16K-Bytex1,
32K-Bytex1,
64K-Byte
FEB/04/1999
PM0548
MX29F100T
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P1338
Abstract: No abstract text available
Text: MX29F001T/B 1M-BIT [128K x 8] CMOS FLASH MEMORY FEATURES • • • • 5.0V ± 10% for read, erase and write operation 131072x8 only organization Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum active current 5MHz - 1uA typical standby current
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MX29F001T/B
131072x8
55/70/90/120ns
32K-Byte
64K-Byte
JUN/14/2001
JUL/01/2002
JUL/09/2002
AUG/12/2002
PM0515
P1338
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29F100T
Abstract: No abstract text available
Text: ADVANCED INFORMATION MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 40mA maximum active current 5MHz
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MX29F100T/B
128Kx8/64Kx16]
131072x8/
65536x16
55/70/90/120ns
16K-Bytex1,
32K-Bytex1,
64K-Byte
PM0548
29F100T
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Untitled
Abstract: No abstract text available
Text: MX29F001T/B 1M-BIT [128K x 8] CMOS FLASH MEMORY FEATURES • • • • 5.0V ± 10% for read, erase and write operation 131072x8 only organization Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum active current 5MHz - 1uA typical standby current
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MX29F001T/B
131072x8
55/70/90/120ns
32K-Byte
64K-Byte
eras38
JUN/14/2001
JUL/01/2002
JUL/09/2002
PM0515
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PDF
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Untitled
Abstract: No abstract text available
Text: MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 40mA maximum active current 5MHz
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MX29F100T/B
128Kx8/64Kx16]
131072x8/
65536x16
55/70/90/120ns
16K-Bytex1,
32K-Bytex1,
64K-Byte
CompatiPM0548
DEC/21/1999
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PDF
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Untitled
Abstract: No abstract text available
Text: MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 40mA maximum active current 5MHz
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MX29F100T/B
128Kx8/64Kx16]
131072x8/
65536x16
55/70/90/120ns
16K-Bytex1,
32K-Bytex1,
64K-Byte
JUN/14/2001
NOV/12/2001
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29f001
Abstract: No abstract text available
Text: MX29F001T/B 1M-BIT [128K x 8] CMOS FLASH MEMORY FEATURES • • • • 5.0V ± 10% for read, erase and write operation 131072x8 only organization Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum active current 5MHz - 1uA typical standby current
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MX29F001T/B
131072x8
55/70/90/120ns
32K-Byte
64K-Byte
JUN/14/2001
JUL/01/2002
JUL/09/2002
AUG/12/2002
NOV/20/2002
29f001
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29F001
Abstract: nec flash device code marking on top MX29F001T MX29F001TQC-90 Macronix marking
Text: MX29F001T/B 1M-BIT [128K x 8] CMOS FLASH MEMORY FEATURES 5.0V ± 10% for read, erase and write operation 131072x8 only organization Fast access time: 90/120ns Low power consumption - 30mA maximum active current 5MHz - 1uA typical standby current • Command register architecture
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MX29F001T/B
131072x8
90/120ns
32K-Byte
64K-Byte
resC/29/2003
29F001
nec flash device code marking on top
MX29F001T
MX29F001TQC-90
Macronix marking
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Untitled
Abstract: No abstract text available
Text: MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 40mA maximum active current 5MHz
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MX29F100T/B
128Kx8/64Kx16]
131072x8/
65536x16
55/70/90/120ns
16K-Bytex1,
32K-Bytex1,
64K-Byte
80ms--
80us--
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Untitled
Abstract: No abstract text available
Text: MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:90/120ns Low power consumption - 40mA maximum active current 5MHz
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MX29F100T/B
128Kx8/64Kx16]
131072x8/
65536x16
90/120ns
16K-Bytex1,
32K-Bytex1,
64K-Byte
JUN/14/2001
NOV/12/2001
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PDF
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Untitled
Abstract: No abstract text available
Text: MX29F001T/B 1M-BIT [128K x 8] CMOS FLASH MEMORY FEATURES • • • • 5.0V ± 10% for read, erase and write operation 131072x8 only organization Fast access time: 90/120ns Low power consumption - 30mA maximum active current 5MHz - 1uA typical standby current
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MX29F001T/B
131072x8
90/120ns
32K-Byte
64K-Byte
thatUL/01/2002
JUL/09/2002
AUG/12/2002
NOV/20/2002
DEC/29/2003
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PDF
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Untitled
Abstract: No abstract text available
Text: MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:90/120ns Low power consumption - 40mA maximum active current 5MHz
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MX29F100T/B
128Kx8/64Kx16]
131072x8/
65536x16
90/120ns
16K-Bytex1,
32K-Bytex1,
64K-Byte
single-pow003
PM0548
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PDF
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Untitled
Abstract: No abstract text available
Text: MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 40mA maximum active current 5MHz
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MX29F100T/B
128Kx8/64Kx16]
131072x8/
65536x16
55/70/90/120ns
16K-Bytex1,
32K-Bytex1,
64K-Byte
80us--
100us
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PDF
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CSTCE8M00G15
Abstract: 8B103 CSTCE10M0G15 CSTCE12M0G15 CRC16 mc 3055 INT5130 27p06 cstcr6m00g15
Text: 注文コード No. N A 0 5 9 0 LC87F14C8SA CMOS LSI FROM128Kバイト,RAM10240バイト内蔵 8ビット1チップUSBホスト制御 マイクロコンピュータ 概要 バイトのフラ
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LC87F14C8SA
FROM128K
RAM10240
81USB
LC87F14C8SA
10240RAM,
812AD
12PWM
12MHz)
250ns
CSTCE8M00G15
8B103
CSTCE10M0G15
CSTCE12M0G15
CRC16
mc 3055
INT5130
27p06
cstcr6m00g15
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LC87F67C8A
Abstract: 82701 81
Text: CMOS IC LC87F67C8A 8-Bit Single Chip Microcontroller Under Development LC87F67C8A Overview 8-bit single-chip microcontroller with the following on-chip functional blocks. - CPU: operable at a minimum bus cycle time of 100 ns - 128K bytes flash ROM rewritable on-board
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LC87F67C8A
14-chads
LC87F67C8A
82701 81
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BCM 4709
Abstract: 78F1830 78F1834 78f1835 78f1845 78F1804 78f1826 78F1830GAA2-GAM-G ADS TS20 PD78F1841
Text: User’s Manual 16 表紙 78K0R/Fx3 ユーザーズマニュアル ハードウェア編 16 ビット・シングルチップ・マイクロコントローラ 本資料に記載の全ての情報は本資料発行時点のものでありルネサス エレクトロニクスは、
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78K0R/Fx3
78K0R/FB3:
PD78F1804
78F1805
78F1806
78F1807
78F1804
BCM 4709
78F1830
78F1834
78f1835
78f1845
78f1826
78F1830GAA2-GAM-G
ADS TS20
PD78F1841
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PDF
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LC87F67C8A
Abstract: W87FQ100 N1502 727816
Text: 注文コード No. N ※ 7 2 7 8 N※ 7278 N1502 LC87F67C8A CMOS LSI FROM128K バイト RAM4096 バイト内蔵 8 ビット 1 チップマイクロコンピュータ LC87F67C8A は 最小バスサイクル 100ns で動作する CPU 部を中心にして、
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N1502
LC87F67C8A
FROM128K
RAM4096
100ns
LC87F67C8A)
N1502
LC87F67C8A
W87FQ100
727816
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Untitled
Abstract: No abstract text available
Text: - _ W241024A Winbond 128K X 8 HIGH SPEED CMOS STATIC RAM GENERAL DESCRIPTION The W241024A is a high speed, low power CMOS static RAM organized as 131072x8 bits that operates on a single 5-volt power supply. This device is manufactured using Winbond’s high perfomance CMOS
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OCR Scan
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W241024A
131072x8
600mW
32-pin
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W241024
Abstract: No abstract text available
Text: W241024 iinbond I28K X 8 CMOS STATIC RAM GENERAL DESCRIPTION The W241024 is a slow speed, low power CMOS static RAM organized as 131072x8 bits that operates on a single 5-volt power supply. This device is manufactured using Winbond's high performance CMOS jyQc^sjJi
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W241024
W241024
131072x8
300mW
32-pin
600mil
450mil
500mV
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W241024
Abstract: No abstract text available
Text: W241024 Winbond 128K X 8 CMOS STATIC RAM GENERAL DESCRIPTION The W241024 is a slow speed, low power CMOS static RAM organized as 131072x8 bits that operates SlowSlKfid on a single 5-volt power supply. This device is manufactured using W inbond's high performance CMOS rune cdaiic
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OCR Scan
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W241024
131072x8
300mW
10//W
32-pin
600mil
450mil
W241024-70LL
W241024-10L
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Untitled
Abstract: No abstract text available
Text: IJVinbond W241024A .— - 128K X 8 HIGH SPEED CMOS STATIC RAM GENERAL DESCRIPTION The W241024A is a high speed, low power CMOS static RAM organized as 131072x8 bits that operates on a single 5-volt power supply. This device is manufactured using Winbond’s high perfomance CMOS
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OCR Scan
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W241024A
W241024A
131072x8
600mW
32-pin
A0-A16
W241024AK-15
W241024AK-20
W241024ARK-15
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Untitled
Abstract: No abstract text available
Text: « 6 I B W Ê Î j f t W231024 Winbond 128K X 8 MASK ROM DESCRIPTION FEATURES The W231024 is a High Speed Mask-Programm • Power Consumption : able Read-Only Memory Active : 175mW Typ. Organized as 131072 X 8 Bits and Operates on a Single • Access Time : 200/300 ns (Max.)
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W231024
175mW
W231024
B-1930
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HN462532G
Abstract: HN462732G HN4827128G-25 6116ALSP-15 482732AG 6116LP 613128P HM4816AP4 6116ALP-10 HM4816AP-4
Text: \ HITACHI IC MEMORY DATA BOOK 0 HITACHI 1 IN D EX • • • • • • Q U IC K R E F E R E N C E G U ID E TO H IT A C H I IC M EM O R IES . 8 MOS R A M .
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