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    American Technical Ceramics Corp ATC100A100JP150XB

    CERAMIC CAPACITOR, MULTILAYER, CERAMIC, 150V, 5% +TOL, 5% -TOL, 90+/-20PPM/CEL TC, 0.00001UF, SURFACE MOUNT, 0606 (Also Known As: 100A100JP150XB)
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    100A100JP150X Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRFG35010MT1 Rev. 4, 7/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistors MRFG35010NT1 MRFG35010MT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Devices are unmatched and are suitable for use in Class


    Original     		PDF MRFG35010MT1 MRFG35010NT1 MRFG35010MT1

    6 017 03 61

    Abstract: A113 MRFG35010MT1 MRFG35010NT1 D55342M07
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010MT1 Rev. 5, 2/2006 Replaced by MRFG35010NT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		PDF MRFG35010MT1 MRFG35010NT1. 6 017 03 61 A113 MRFG35010MT1 MRFG35010NT1 D55342M07

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Available at: Available at http://www.motorola.com/rf, Go to Tools SEMICONDUCTOR TECHNICAL DATA RF Reference Design Library The RF GaAs Line MRFG35003MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet


    Original     		PDF RDMRFG35003MT1BWA MRFG35003MT1

    transistor std 13007

    Abstract: ATC 601 IPC transistor E 13007 FET 4016 MRFG35010 A113 MRFG35010NT1 j 13007 TRANSISTOR 1309-2
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010N Rev. 6, 2/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35010NT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. This device is unmatched and is suitable for use in Class


    Original     		PDF MRFG35010N MRFG35010NT1 transistor std 13007 ATC 601 IPC transistor E 13007 FET 4016 MRFG35010 A113 MRFG35010NT1 j 13007 TRANSISTOR 1309-2

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor, Inc. MOTOROLA Available at: Available at http://www.motorola.com/rf, Go to Tools SEMICONDUCTOR TECHNICAL DATA RF Reference Design Library The RF GaAs Line MRFG35003MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet


    Original     		PDF MRFG35003MT1 MRFG35003MT1 RDMRFG35003MT1BWA

    MRFG35010ANT1

    Abstract: IRL 724 N A113 AN1955 arco 466 14584 atc 17-33 transistor d 4515 EQUIVALENT
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 0, 5/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35010ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35010AN MRFG35010ANT1 MRFG35010ANT1 IRL 724 N A113 AN1955 arco 466 14584 atc 17-33 transistor d 4515 EQUIVALENT

    transistor std 13007

    Abstract: 0944
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010N Rev. 6, 2/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35010NT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. This device is unmatched and is suitable for use in Class


    Original     		PDF MRFG35010N MRFG35010NT1 MRFG35010N transistor std 13007 0944

    transistor on 4959

    Abstract: GT5040
    Text: Document Number: MRFG35002N6 Rev. 0, 2/2006 Freescale Semiconductor Technical Data Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35002N6T1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 0.5 to 5.0 GHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35002N6 MRFG35002N6T1 MRFG35002N6 transistor on 4959 GT5040

    100A100JP150X

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRFG35010MT1 Rev. 4, 7/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistors MRFG35010NT1 MRFG35010MT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Devices are unmatched and are suitable for use in Class


    Original     		PDF MRFG35010MT1 MRFG35010NT1 MRFG35010MT1 100A100JP150X

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRFG35002N6 Rev. 2, 1/2008 Freescale Semiconductor Technical Data MRFG35002N6T1 replaced by MRFG35002N6AT1. Gallium Arsenide PHEMT MRFG35002N6T1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35002N6 MRFG35002N6T1 MRFG35002N6AT1. MRFG35002N6T1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35010ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35010AN MRFG35010ANT1

    6 017 03 61

    Abstract: A113 MRFG35010ANT1 MRFG35010NT1 Z16C20
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010N Rev. 7, 1/2008 MRFG35010NT1 replaced by MRFG35010ANT1. MRFG35010NT1 Gallium Arsenide PHEMT RF Power Field Effect Transistor 3.5 GHz, 9 W, 12 V POWER FET GaAs PHEMT • Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts,


    Original     		PDF MRFG35010N MRFG35010NT1 MRFG35010ANT1. MRFG35010NT1 6 017 03 61 A113 MRFG35010ANT1 Z16C20

    GT1040

    Abstract: 466 907 A113 AN1955 MRFG35002N6AT1 MRFG35002N6T1
    Text: Document Number: MRFG35002N6 Rev. 2, 1/2008 Freescale Semiconductor Technical Data MRFG35002N6T1 replaced by MRFG35002N6AT1. Gallium Arsenide PHEMT MRFG35002N6T1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35002N6 MRFG35002N6T1 MRFG35002N6AT1. MRFG35002N6T1 GT1040 466 907 A113 AN1955 MRFG35002N6AT1

    LL1608-FHN2K

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF GaAs Line MRFG35005MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet


    Original     		PDF MRFG35005MT1 RDMRFG35005MT1BWA LL1608-FHN2K

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010N Rev. 7, 1/2008 MRFG35010NT1 replaced by MRFG35010ANT1. MRFG35010NT1 Gallium Arsenide PHEMT RF Power Field Effect Transistor 3.5 GHz, 9 W, 12 V POWER FET GaAs PHEMT • Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts,


    Original     		PDF MRFG35010N MRFG35010NT1 MRFG35010ANT1. MRFG35010NT1

    P51ETR-ND

    Abstract: A113 A114 A115 AN1955 C101 JESD22 MRFG35010ANT1
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35010ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35010AN MRFG35010ANT1 P51ETR-ND A113 A114 A115 AN1955 C101 JESD22 MRFG35010ANT1

    GT1040

    Abstract: 100A101 A113 AN1955 MRFG35002N6AT1 MRFG35002N6T1
    Text: Document Number: MRFG35002N6 Rev. 2, 1/2008 Freescale Semiconductor Technical Data Gallium Arsenide PHEMT MRFG35002N6T1 RF Power Field Effect Transistor LIFETIME BUY Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35002N6 MRFG35002N6T1 GT1040 100A101 A113 AN1955 MRFG35002N6AT1 MRFG35002N6T1

    marking us capacitor pf l1

    Abstract: marking Z4 CDR33BX104AKWS MRFG35003MT1 MRFG35003NT1 freescale semiconductor body marking freescale power RF products FREESCALE MARKING C3 100A100JP150X ATC
    Text: Freescale Semiconductor Technical Data Available at http://www.freescale.com/rf, Go to Tools Rev. 1, 6/2005 RF Reference Design Library Gallium Arsenide PHEMT MRFG35003NT1 MRFG35003MT1 BWA RF Power Field Effect Transistors Device Characteristics From Device Data Sheet


    Original     		PDF MRFG35003NT1 MRFG35003MT1 MRFG35003NT1 MRFG35003MT1 marking us capacitor pf l1 marking Z4 CDR33BX104AKWS freescale semiconductor body marking freescale power RF products FREESCALE MARKING C3 100A100JP150X ATC

    db14g

    Abstract: CDR33BX104AKWS MRFG35010MT1 T491X226K035AS LL1608-FHN2K 85dBp MRFG35010M
    Text: Freescale Semiconductor, Inc. MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF GaAs Line MRFG35010MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet


    Original     		PDF MRFG35010MT1 MRFG35010MT1 RDMRFG35010MT1BWA db14g CDR33BX104AKWS T491X226K035AS LL1608-FHN2K 85dBp MRFG35010M

    transistor marking z11

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Available at http://www.freescale.com/rf, Go to Tools Rev. 1, 6/2005 RF Reference Design Library Gallium Arsenide PHEMT MRFG35005NT1 MRFG35005MT1 BWA RF Power Field Effect Transistor Device Characteristics From Device Data Sheet


    Original     		PDF MRFG35005NT1 MRFG35005MT1 transistor marking z11

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010MT1 Rev. 5, 2/2006 Replaced by MRFG35010NT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		PDF MRFG35010MT1 MRFG35010NT1.

    2312 footprint dimension

    Abstract: A113 AN1955 MRFG35002N6T1 GT1040
    Text: Document Number: MRFG35002N6 Rev. 1, 5/2006 Freescale Semiconductor Technical Data Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35002N6 MRFG35002N6T1 2312 footprint dimension A113 AN1955 MRFG35002N6T1 GT1040

    atc 17-33

    Abstract: MRFG35010ANT1 5V piezo 9mm X 12mm IRL 724 N A113 A114 A115 AN1955 C101 JESD22
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 1, 12/2008 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35010ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35010AN MRFG35010ANT1 atc 17-33 MRFG35010ANT1 5V piezo 9mm X 12mm IRL 724 N A113 A114 A115 AN1955 C101 JESD22

    A113

    Abstract: MRFG35010ANT1 MRFG35010NT1 100A100JP150X
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010N Rev. 7, 1/2008 MRFG35010NT1 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. This device is unmatched and is suitable for use in Class


    Original     		PDF MRFG35010N MRFG35010NT1 A113 MRFG35010ANT1 MRFG35010NT1 100A100JP150X