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    D55342M07 Price and Stock

    Vishay Thin Film D55342M07B249ART5

    D55342M 300PPM 1206 249 0.1% R T
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    DigiKey D55342M07B249ART5 Reel 500
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    Vishay Thin Film D55342M07B1B23RT3

    D55342M 300PPM 1206 1.23K 0.1% R
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    DigiKey D55342M07B1B23RT3 Reel 300
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    Vishay Thin Film D55342M07B100BRWS

    D55342M 300PPM 1206 100K 0.1% R
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    DigiKey D55342M07B100BRWS Reel 25
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    Vishay Thin Film D55342M07B100BRT3

    D55342M 300PPM 1206 100K 0.1% R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey D55342M07B100BRT3 Reel 300
    • 1 -
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    • 1000 $2.37167
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    Vishay Thin Film D55342M07B10B0SWS

    D55342M 300PPM 1206 10K 0.1% S W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey D55342M07B10B0SWS Reel 25
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    Find more D55342M07 price and stock on Findchips.com

    D55342M07 Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Type PDF
    D55342M07B100KPWSV Vishay Dale Resistors - Chip Resistor - Surface Mount - RES SMD 100K OHM 5% 1/4W 1206 Original PDF
    D55342M07B10K0MTSV Vishay Dale Resistors - Chip Resistor - Surface Mount - RES SMD 10K OHM 5% 1/4W 1206 Original PDF
    D55342M07B124BRTS Vishay Dale D55342 300PPM 1206 124K 0.1% R Original PDF
    D55342M07B130KRWSV Vishay Dale Resistors - Chip Resistor - Surface Mount - RES SMD 130K OHM 5% 1/4W 1206 Original PDF
    D55342M07B150KMTSV Vishay Dale Resistors - Chip Resistor - Surface Mount - RES SMD 150K OHM 5% 1/4W 1206 Original PDF
    D55342M07B1C00MTS Vishay Dale D55342 300PPM 1206 1M 0.1% M Original PDF
    D55342M07B1K20MTSV Vishay Dale Resistors - Chip Resistor - Surface Mount - RES SMD 1.2K OHM 5% 1/4W 1206 Original PDF
    D55342M07B22K0PT1V Vishay Dale Resistors - Chip Resistor - Surface Mount - RES SMD 22K OHM 5% 1/4W 1206 Original PDF
    D55342M07B24B9RWS Vishay Dale Resistors - Chip Resistor - Surface Mount - RES SMD 24.9K OHM 0.1% 1/4W 1206 Original PDF
    D55342M07B27K0RWSV Vishay Dale Resistors - Chip Resistor - Surface Mount - RES SMD 27K OHM 5% 1/4W 1206 Original PDF
    D55342M07B300KRWSV Vishay Dale Resistors - Chip Resistor - Surface Mount - RES SMD 300K OHM 5% 1/4W 1206 Original PDF
    D55342M07B390KRWSV Vishay Dale Resistors - Chip Resistor - Surface Mount - RES SMD 390K OHM 5% 1/4W 1206 Original PDF
    D55342M07B4K30MTSV Vishay Dale Resistors - Chip Resistor - Surface Mount - RES SMD 4.3K OHM 5% 1/4W 1206 Original PDF
    D55342M07B50K0MTSV Vishay Dale Resistors - Chip Resistor - Surface Mount - RES SMD 50K OHM 5% 1/4W 1206 Original PDF
    D55342M07B5L10R Vishay 1206 200ppm 5M10 5% Original PDF
    D55342M07B68K0RWSV Vishay Dale Resistors - Chip Resistor - Surface Mount - RES SMD 68K OHM 5% 1/4W 1206 Original PDF
    D55342M07B7K50PT1V Vishay Dale Resistors - Chip Resistor - Surface Mount - RES SMD 7.5K OHM 5% 1/4W 1206 Original PDF
    D55342M07B8K20RWSV Vishay Dale Resistors - Chip Resistor - Surface Mount - RES SMD 8.2K OHM 5% 1/4W 1206 Original PDF

    D55342M07 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRFG35010MT1 Rev. 4, 7/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistors MRFG35010NT1 MRFG35010MT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Devices are unmatched and are suitable for use in Class


    Original     		PDF MRFG35010MT1 MRFG35010NT1 MRFG35010MT1

    13009 TRANSISTOR equivalent

    Abstract: D 13009 K transistor M 9718 4221 motorola transistor transistor E 13009 MRFG35030 transistor d 13009 MRFG35030R5 transistor 9718 transistor E 13009 equivalent
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRFG35030R5/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line Gallium Arsenide PHEMT Freescale Semiconductor, Inc. RF Power Field Effect Transistor MRFG35030R5 Designed for WLL base station applications with frequencies from 3400 to


    Original     		PDF MRFG35030R5/D MRFG35030R5 13009 TRANSISTOR equivalent D 13009 K transistor M 9718 4221 motorola transistor transistor E 13009 MRFG35030 transistor d 13009 MRFG35030R5 transistor 9718 transistor E 13009 equivalent

    6 017 03 61

    Abstract: A113 MRFG35010MT1 MRFG35010NT1 D55342M07
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010MT1 Rev. 5, 2/2006 Replaced by MRFG35010NT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		PDF MRFG35010MT1 MRFG35010NT1. 6 017 03 61 A113 MRFG35010MT1 MRFG35010NT1 D55342M07

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Available at: Available at http://www.motorola.com/rf, Go to Tools SEMICONDUCTOR TECHNICAL DATA RF Reference Design Library The RF GaAs Line MRFG35003MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet


    Original     		PDF RDMRFG35003MT1BWA MRFG35003MT1

    transistor std 13007

    Abstract: ATC 601 IPC transistor E 13007 FET 4016 MRFG35010 A113 MRFG35010NT1 j 13007 TRANSISTOR 1309-2
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010N Rev. 6, 2/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35010NT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. This device is unmatched and is suitable for use in Class


    Original     		PDF MRFG35010N MRFG35010NT1 transistor std 13007 ATC 601 IPC transistor E 13007 FET 4016 MRFG35010 A113 MRFG35010NT1 j 13007 TRANSISTOR 1309-2

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor, Inc. MOTOROLA Available at: Available at http://www.motorola.com/rf, Go to Tools SEMICONDUCTOR TECHNICAL DATA RF Reference Design Library The RF GaAs Line MRFG35003MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet


    Original     		PDF MRFG35003MT1 MRFG35003MT1 RDMRFG35003MT1BWA

    transistor std 13007

    Abstract: 0944
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010N Rev. 6, 2/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35010NT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. This device is unmatched and is suitable for use in Class


    Original     		PDF MRFG35010N MRFG35010NT1 MRFG35010N transistor std 13007 0944

    100A100JP150X

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRFG35010MT1 Rev. 4, 7/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistors MRFG35010NT1 MRFG35010MT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Devices are unmatched and are suitable for use in Class


    Original     		PDF MRFG35010MT1 MRFG35010NT1 MRFG35010MT1 100A100JP150X

    6 017 03 61

    Abstract: A113 MRFG35010ANT1 MRFG35010NT1 Z16C20
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010N Rev. 7, 1/2008 MRFG35010NT1 replaced by MRFG35010ANT1. MRFG35010NT1 Gallium Arsenide PHEMT RF Power Field Effect Transistor 3.5 GHz, 9 W, 12 V POWER FET GaAs PHEMT • Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts,


    Original     		PDF MRFG35010N MRFG35010NT1 MRFG35010ANT1. MRFG35010NT1 6 017 03 61 A113 MRFG35010ANT1 Z16C20

    LL1608-FHN2K

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF GaAs Line MRFG35005MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet


    Original     		PDF MRFG35005MT1 RDMRFG35005MT1BWA LL1608-FHN2K

    100B102JP50X

    Abstract: 3.40 pf variable capacitor A114 A115 AN1955 C101 JESD22 MRF6P18190HR6 100B5R6CP500X Z25 transistor
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P18190H Rev. 0, 4/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for W - CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF6P18190H MRF6P18190HR6 100B102JP50X 3.40 pf variable capacitor A114 A115 AN1955 C101 JESD22 MRF6P18190HR6 100B5R6CP500X Z25 transistor

    D55342M07B

    Abstract: 100B102JP500X rick miller MRFG35010M LL-210 D55342M07
    Text: Freescale Semiconductor Technical Data Available at http://www.freescale.com/rf, Go to Tools Rev. 1, 6/2005 RF Reference Design Library Gallium Arsenide PHEMT MRFG35010NT1 MRFG35010MT1 BWA RF Power Field Effect Transistor Device Characteristics From Device Data Sheet


    Original     		PDF MRFG35010NT1 MRFG35010MT1 D55342M07B 100B102JP500X rick miller MRFG35010M LL-210 D55342M07

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010N Rev. 7, 1/2008 MRFG35010NT1 replaced by MRFG35010ANT1. MRFG35010NT1 Gallium Arsenide PHEMT RF Power Field Effect Transistor 3.5 GHz, 9 W, 12 V POWER FET GaAs PHEMT • Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts,


    Original     		PDF MRFG35010N MRFG35010NT1 MRFG35010ANT1. MRFG35010NT1

    transistor d 13009

    Abstract: 13009 TRANSISTOR equivalent 136.21 200B393KP50X CDR33BX104AKWS MRFG35030 MRFG35030R5 RO4350
    Text: Freescale Semiconductor Technical Data MRFG35030R5 Rev. 2, 3/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL base station applications with frequencies from 3400 to 3600 MHz. Suitable for TDMA and CDMA amplifier applications. To be used in


    Original     		PDF MRFG35030R5 transistor d 13009 13009 TRANSISTOR equivalent 136.21 200B393KP50X CDR33BX104AKWS MRFG35030 MRFG35030R5 RO4350

    db14g

    Abstract: CDR33BX104AKWS MRFG35010MT1 T491X226K035AS LL1608-FHN2K 85dBp MRFG35010M
    Text: Freescale Semiconductor, Inc. MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF GaAs Line MRFG35010MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet


    Original     		PDF MRFG35010MT1 MRFG35010MT1 RDMRFG35010MT1BWA db14g CDR33BX104AKWS T491X226K035AS LL1608-FHN2K 85dBp MRFG35010M

    13009 TRANSISTOR equivalent

    Abstract: transistor d 13009
    Text: MOTOROLA Order this document by MRFG35030R5/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35030R5 Designed for WLL base station applications with frequencies from 3400 to 3600 MHz. Suitable for TDMA and CDMA amplifier applications. To be used in


    Original     		PDF MRFG35030R5/D MRFG35030R5 MRFG35030R5 MRFG35030R5/D 13009 TRANSISTOR equivalent transistor d 13009

    13009 TRANSISTOR equivalent

    Abstract: MRFG35030 transistor d 13009 MRFG35030R5
    Text: Freescale Semiconductor Technical Data MRFG35030R5 Rev. 2, 3/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL base station applications with frequencies from 3400 to 3600 MHz. Suitable for TDMA and CDMA amplifier applications. To be used in


    Original     		PDF MRFG35030R5 13009 TRANSISTOR equivalent MRFG35030 transistor d 13009

    transistor marking z11

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Available at http://www.freescale.com/rf, Go to Tools Rev. 1, 6/2005 RF Reference Design Library Gallium Arsenide PHEMT MRFG35005NT1 MRFG35005MT1 BWA RF Power Field Effect Transistor Device Characteristics From Device Data Sheet


    Original     		PDF MRFG35005NT1 MRFG35005MT1 transistor marking z11

    MC13892

    Abstract: FET GAAS marking a transistor z4 30 transistor d 13009 H 9832 C696 MARKING Z7 RF TRANSISTOR 2.5 GHZ s parameter mc13892 schematic MRFG35030
    Text: Freescale Semiconductor Technical Data MRFG35030R5 Rev. 2, 3/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL base station applications with frequencies from 3400 to 3600 MHz. Suitable for TDMA and CDMA amplifier applications. To be used in


    Original     		PDF MRFG35030R5 MC13892 MC13892 FET GAAS marking a transistor z4 30 transistor d 13009 H 9832 C696 MARKING Z7 RF TRANSISTOR 2.5 GHZ s parameter mc13892 schematic MRFG35030

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010MT1 Rev. 5, 2/2006 Replaced by MRFG35010NT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		PDF MRFG35010MT1 MRFG35010NT1.

    A113

    Abstract: MRFG35010ANT1 MRFG35010NT1 100A100JP150X
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010N Rev. 7, 1/2008 MRFG35010NT1 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. This device is unmatched and is suitable for use in Class


    Original     		PDF MRFG35010N MRFG35010NT1 A113 MRFG35010ANT1 MRFG35010NT1 100A100JP150X

    MRFG35010M

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF GaAs Line MRFG35010MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet


    Original     		PDF RDMRFG35010MT1BWA MRFG35010MT1 MRFG35010M

    MRFG35005MT1

    Abstract: CDR33BX104AKWS T491X226K035AS 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM LL-210
    Text: Freescale Semiconductor, Inc. MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF GaAs Line MRFG35005MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet


    Original     		PDF MRFG35005MT1 MRFG35005MT1 RDMRFG35005MT1BWA CDR33BX104AKWS T491X226K035AS 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM LL-210