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    100A101 Price and Stock

    Kyocera AVX Components 100A101JW150XT1K

    CAP CER 100PF 150V P90 0505
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 100A101JW150XT1K Reel 11,000 1,000
    • 1 -
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    • 100 -
    • 1000 $2.07043
    • 10000 $1.9554
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    100A101JW150XT1K Cut Tape 2,326 1
    • 1 $4.75
    • 10 $3.65
    • 100 $2.8373
    • 1000 $2.2238
    • 10000 $2.2238
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    Mouser Electronics 100A101JW150XT1K 1,000
    • 1 $3.66
    • 10 $2.82
    • 100 $2.19
    • 1000 $1.59
    • 10000 $1.59
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    Kyocera AVX Components 100A101FT150XT1K

    CAP CER 100PF 150V P90 0505
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 100A101FT150XT1K Reel 5,000 1,000
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    • 1000 $2.06314
    • 10000 $1.98379
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    100A101FT150XT1K Cut Tape 427 1
    • 1 $3.97
    • 10 $3.412
    • 100 $2.5551
    • 1000 $2.22184
    • 10000 $2.22184
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    100A101FT150XT1K Digi-Reel 1
    • 1 $3.97
    • 10 $3.412
    • 100 $2.5551
    • 1000 $2.22184
    • 10000 $2.22184
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    Richardson RFPD 100A101FT150XT1K 1,000
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    • 1000 $2.73
    • 10000 $1.98
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    Kyocera AVX Components 100A101JP150XT

    CAP CER 100PF 150V P90 0505
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    DigiKey 100A101JP150XT Reel 2,500 500
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    • 1000 $1.86398
    • 10000 $1.6873
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    100A101JP150XT Cut Tape 956 1
    • 1 $4.64
    • 10 $3.11
    • 100 $2.2977
    • 1000 $2.2977
    • 10000 $2.2977
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    TTI 100A101JP150XT Reel 500
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    • 1000 $1.56
    • 10000 $1.5
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    Richardson RFPD 100A101JP150XT 500
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    • 1000 $1.55
    • 10000 $1.39
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    Kyocera AVX Components 100A101JT150XT1K

    CAP CER 100PF 150V P90 0505
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 100A101JT150XT1K Cut Tape 2,002 1
    • 1 $5.59
    • 10 $3.79
    • 100 $2.8313
    • 1000 $2.44156
    • 10000 $2.44156
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    100A101JT150XT1K Reel 2,000 1,000
    • 1 -
    • 10 -
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    • 1000 $2.31961
    • 10000 $2.16773
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    Kyocera AVX Components 100A101KP150XT1K

    CAP CER 100PF 150V P90 0505
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 100A101KP150XT1K Reel 1,500 500
    • 1 -
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    • 1000 $1.02518
    • 10000 $1.02518
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    100A101KP150XT1K Cut Tape 367 1
    • 1 $1.98
    • 10 $1.521
    • 100 $1.1588
    • 1000 $1.1588
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    Find more 100A101 price and stock on Findchips.com

    100A101 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Type PDF
    100A101FT150XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 100PF 150V P90 0505 Original PDF
    100A101FT150XT1K American Technical Ceramics Ceramic Capacitor 100PF 150V P90 0505 Original PDF
    100A101FW150XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 100PF 150V P90 0505 Original PDF
    100A101FW150XT1K American Technical Ceramics Ceramic Capacitor 100PF 150V P90 0505 Original PDF
    100A101GT150XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 100PF 150V P90 0505 Original PDF
    100A101JCA150XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 100PF 150V P90 0505 Original PDF
    100A101JP150XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 100PF 150V P90 0505 Original PDF
    100A101JT150XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 100PF 150V P90 0505 Original PDF
    100A101JT150XT1K American Technical Ceramics Ceramic Capacitor 100PF 150V P90 0505 Original PDF
    100A101JW150XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 100PF 150V P90 0505 Original PDF
    100A101JW150XT1K American Technical Ceramics Ceramic Capacitor 100PF 150V P90 0505 Original PDF
    100A101KP150XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 100PF 150V P90 0505 Original PDF
    100A101KP150XT1K American Technical Ceramics Ceramic Capacitor 100PF 150V P90 0505 Original PDF

    100A101 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    915 MHz RFID

    Abstract: HSMS-286A METAL DETECTOR circuit for make IC RFID 2.45 GHz 2.45 GHz single chip transmitter HSMS-2850 HSMS-286C 100A101MCA50 "zero-bias schottky diode" mark code t4 diode
    Text: Surface Mount Microwave Schottky Detector Diodes in SOT-323 SC-70 Technical Data HSMS-285A Series HSMS-286A Series Features • Surface Mount SOT-323 Package • High Detection Sensitivity: Up to 50 mV/µW at 915 MHz Up to 35 mV/µW at 2.45 GHz Up to 25 mV/µW at 5.80 GHz


    Original     		PDF OT-323 SC-70) HSMS-285A HSMS-286A HSMS-285A 5965-8838E 5966-4282E 915 MHz RFID METAL DETECTOR circuit for make IC RFID 2.45 GHz 2.45 GHz single chip transmitter HSMS-2850 HSMS-286C 100A101MCA50 "zero-bias schottky diode" mark code t4 diode

    epsilam 10

    Abstract: BY239 BDT91 LLE18150X SC15 erie 1250-003 diode BY239
    Text: DISCRETE SEMICONDUCTORS DATA SHEET LLE18150X NPN silicon planar epitaxial microwave power transistor Product specification File under Discrete Semiconductors, SC15 Philips Semiconductors September 1994 Philips Semiconductors Product specification NPN silicon planar epitaxial


    Original     		PDF LLE18150X epsilam 10 BY239 BDT91 LLE18150X SC15 erie 1250-003 diode BY239

    philips ferrite 4330-030

    Abstract: philips ferrite 4b1 TRansistor 648 BY239 BDT91 LLE18010X j160 capacitor philips
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D159 LLE18010X NPN microwave power transistor Product specification Supersedes data of December 1994 1999 Apr 22 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors


    Original     		PDF M3D159 LLE18010X SCA63 125002/00/02/pp12 philips ferrite 4330-030 philips ferrite 4b1 TRansistor 648 BY239 BDT91 LLE18010X j160 capacitor philips

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35005N Rev. 5, 1/2008 MRFG35005NT1 replaced by MRFG35005ANT1. MRFG35005NT1 Gallium Arsenide PHEMT Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35005N MRFG35005NT1 MRFG35005ANT1. MRFG35005NT1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35005MT1 Rev. 3, 1/2006 Replaced by MRFG35005NT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		PDF MRFG35005MT1 MRFG35005NT1.

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRFG35010MT1 Rev. 4, 7/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistors MRFG35010NT1 MRFG35010MT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Devices are unmatched and are suitable for use in Class


    Original     		PDF MRFG35010MT1 MRFG35010NT1 MRFG35010MT1

    transistor GT 1081

    Abstract: MRFG35010AR5
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010A Rev. 0, 5/2006 Gallium Arsenide PHEMT MRFG35010AR1 MRFG35010AR5 RF Power Field Effect Transistor Designed for WiMAX, WLL/MMDS or UMTS driver and final applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for


    Original     		PDF MRFG35010A MRFG35010AR1 MRFG35010AR5 MRFG35010A transistor GT 1081 MRFG35010AR5

    13009 TRANSISTOR equivalent

    Abstract: D 13009 K transistor M 9718 4221 motorola transistor transistor E 13009 MRFG35030 transistor d 13009 MRFG35030R5 transistor 9718 transistor E 13009 equivalent
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRFG35030R5/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line Gallium Arsenide PHEMT Freescale Semiconductor, Inc. RF Power Field Effect Transistor MRFG35030R5 Designed for WLL base station applications with frequencies from 3400 to


    Original     		PDF MRFG35030R5/D MRFG35030R5 13009 TRANSISTOR equivalent D 13009 K transistor M 9718 4221 motorola transistor transistor E 13009 MRFG35030 transistor d 13009 MRFG35030R5 transistor 9718 transistor E 13009 equivalent

    marking 0619

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRFG35005MT1 Rev. 1, 1/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35005MT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35005MT1 MRFG35005MT1 marking 0619

    8772 P

    Abstract: motorola 10116 transistor 17556 A113 MRFG35003MT1 motorola 6809 PLD15 transistor 115 h 8772 p 17556 transistor
    Text: Freescale Semiconductor, Inc. MOTOROLA Order this document by MRFG35003MT1/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line MRFG35003MT1 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies


    Original     		PDF MRFG35003MT1/D MRFG35003MT1 8772 P motorola 10116 transistor 17556 A113 MRFG35003MT1 motorola 6809 PLD15 transistor 115 h 8772 p 17556 transistor

    RF FET TRANSISTOR 3 GHZ

    Abstract: A113 MRFG35003NT1
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35003N Rev. 4, 1/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003NT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35003N MRFG35003NT1 RF FET TRANSISTOR 3 GHZ A113 MRFG35003NT1

    6 017 03 61

    Abstract: A113 MRFG35010MT1 MRFG35010NT1 D55342M07
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010MT1 Rev. 5, 2/2006 Replaced by MRFG35010NT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		PDF MRFG35010MT1 MRFG35010NT1. 6 017 03 61 A113 MRFG35010MT1 MRFG35010NT1 D55342M07

    Marking Z7 Gate Driver

    Abstract: MRFG35005MT1 A113 MRFG35005NT1
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35005MT1 Rev. 3, 1/2006 Replaced by MRFG35005NT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		PDF MRFG35005MT1 MRFG35005NT1. Marking Z7 Gate Driver MRFG35005MT1 A113 MRFG35005NT1

    PIN Diode Switch for frequencies up to 10 GHz

    Abstract: superheterodyne receiver GHz radar metal detector diagrams 2.45 GHz single chip transmitter Optotek zero bias diode
    Text: Designing Detectors for RF/ID Tags Application Note 1089 Abstract The RF/ID market is growing rapidly, with everything from cattle to cars carrying radio frequency identification RF/ID tags. Severe cost, size and DC power constraints in the tag itself have


    Original     		PDF 5966-0786E PIN Diode Switch for frequencies up to 10 GHz superheterodyne receiver GHz radar metal detector diagrams 2.45 GHz single chip transmitter Optotek zero bias diode

    ATC 1184

    Abstract: A113 MRFG35005MT1 C 4804 transistor "class AB Linear" z9 ma 814
    Text: MOTOROLA Order this document MRFG35005MT1/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line Gallium Arsenide PHEMT MRFG35005MT1 RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35005MT1/D MRFG35005MT1 ATC 1184 A113 MRFG35005MT1 C 4804 transistor "class AB Linear" z9 ma 814

    Laser-Distanz-Sensor OADM 13I6564-S35A

    Abstract: baumer electric CH-8501 ohdk 101490 16P56 baumer electric CH-8500 frdk baumer+OSDK+10D9001+/+OEDK+10P5101
    Text: Präzis, messbar besser. Optoelektronische Sensoren. Lichtleiter und Lichtleitergeräte. Edition 2011 Keine Zeitung, keine Schokolade, kein Auto, kein Computer, kein Mobiltelefon könnte heute hergestellt werden, kein Brief oder Paket seinen Empfänger erreichen und kein Flasche Bier könnte abgefüllt werden, wenn nicht optische Sensoren Objekte erfassen, Distanzen messen, Farben erkennen,


    Original     		PDF CN-201612 VE-1070 CH-8501 Laser-Distanz-Sensor OADM 13I6564-S35A baumer electric CH-8501 ohdk 101490 16P56 baumer electric CH-8500 frdk baumer+OSDK+10D9001+/+OEDK+10P5101

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET MX0912B100Y; MZ0912B100Y NPN microwave power transistors Product specification Supersedes data of June 1992 1997 Feb 20 Philips Semiconductors Product specification NPN microwave power transistors MX0912B100Y; MZ0912B100Y


    Original     		PDF MX0912B100Y; MZ0912B100Y

    MX0912B250Y

    Abstract: 33-AS IEC134 015 capacitor philips
    Text: Data shaat •tatua data of Issu* HILXPS MX0912B250Y Preliminary specification NPN silicon planar epitaxial microwave power transistor June 1992 SbE D INTERNATIONAL • 7110fl2b Ü04b34fc, 7Q3 H P H I N FEATURES APPLICATION DESCRIPTION • Interdigitated structure; high


    OCR Scan     		PDF 33-AS" MX0912B250Y G04b34b T-33-Ã 711Dfl2b 004b352 0QMb43? MX0912B250Y 33-AS IEC134 015 capacitor philips

    Untitled

    Abstract: No abstract text available
    Text: S G S - T H O S I M S O N S D 1 89 5 -0 3 m . RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS 1.65 GHz 28 VOLTS OVERLAY DIE GEOMETRY ALL GOLD METALLIZED SYSTEM HIGH RELIABILITY AND RUGGEDNESS COOMON BASE P o u t = 15 W MIN. WITH 9.2 dB GAIN PIN CONNECTION


    OCR Scan     		PDF SD1895-03 D07D75h

    Untitled

    Abstract: No abstract text available
    Text: Philips Components MZ0912B100Y D ISC R ETE SEM ICO N D U CTO R S D a ta s h a e t • t a lu s P re fim in a iy s p e c ific a tio n d a le o f le s u e J u ly 1 9 9 0 NPN silicon planar epitaxial microwave power transistor FEATU RES APPLICATIO N D ESCRIPTIO N


    OCR Scan     		PDF MZ0912B100Y

    Untitled

    Abstract: No abstract text available
    Text: Whnl mL'nM HP Ea Wc kL aE rTdT Surface Mount Zero Bias Schottky Detector Diodes Technical Data Features • Surface M ount SOT-23/ SOT-143 Package • H igh D etection Sensitivity: Package Lead Code Identification Top V iew 40 mV/|iW at 915 MHz 30 mV/jiW at 2.45 GHz


    OCR Scan     		PDF OT-23/ OT-143 HSMS-285X HSMS-285X OT-23 OT143 DD127Ã 5963-2333E 5963-5030E

    MF1011B900Y

    Abstract: SC15
    Text: Philips Semiconductors Product specification Microwave power transistor MF1011B900Y FEATURES QUICK REFERENCE DATA • Suitable for short and medium pulse applications up to 100 |as pulse width, duty factor 10% Microwave performance up to T mb = 25 °C in a common-base class C


    OCR Scan     		PDF MF1011B900Y MLC725 OT448A. MF1011B900Y SC15

    NPN Silicon Epitaxial Planar Transistor

    Abstract: MZ0912B50Y TACAN
    Text: Data sheet statut Preliminary apedfrcatfon date ol Issue July 1990 MZ0912B50Y NPN silicon planar epitaxial microwave power transistor F EATU RES APPLICATION d e s c r ip t io n • Interdigitated structure; high emitter efficiency. • O iffused emitter ballasting


    OCR Scan     		PDF MZ0912B50Y NPN Silicon Epitaxial Planar Transistor MZ0912B50Y TACAN

    30374

    Abstract: Esan
    Text: E-SAN ELECTRONIC CO LTD Active Delay Line TTL Interface • Industry Standard 24 E D • 10 Tap Output Specifications: • Delay tolerance BD374Q2 DOODQSfi Ö • /^3 100A Series • 30 Pin Dip Package Features: • Schottky TTL interface • Low power schottky available named " 1 00AL-1 Oxxx'


    OCR Scan     		PDF 30374Q2 20/TAP 10/TAP 100B-10xxx" 100AM-10xxx 00A-10500 00A-10101 00A-10151 00A-10201 00A-10251 30374 Esan