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    MRFG35002N6T1 Price and Stock

    Rochester Electronics LLC MRFG35002N6T1

    RF MOSFET PHEMT FET 6V PLD-1.5
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    DigiKey MRFG35002N6T1 Bulk 2,300 28
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    NXP Semiconductors MRFG35002N6T1

    RF MOSFET PHEMT FET 6V PLD-1.5
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    DigiKey MRFG35002N6T1 Reel 1,000
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    Avnet Americas MRFG35002N6T1 Reel 4 Weeks 33
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    Freescale Semiconductor MRFG35002N6T1

    RF Small Signal Field-Effect Transistor, C Band, Gallium Arsenide, N-Channel, High Electron Mobility FET
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    Rochester Electronics MRFG35002N6T1 2,300 1
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    MRFG35002N6T1 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MRFG35002N6T1 Motorola Gallium Arsenide PHEMT RF Power Field Effect Transistor Original PDF

    MRFG35002N6T1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor on 4959

    Abstract: GT5040
    Text: Document Number: MRFG35002N6 Rev. 0, 2/2006 Freescale Semiconductor Technical Data Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35002N6T1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 0.5 to 5.0 GHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35002N6 MRFG35002N6T1 MRFG35002N6 transistor on 4959 GT5040

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRFG35002N6 Rev. 2, 1/2008 Freescale Semiconductor Technical Data MRFG35002N6T1 replaced by MRFG35002N6AT1. Gallium Arsenide PHEMT MRFG35002N6T1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35002N6 MRFG35002N6T1 MRFG35002N6AT1. MRFG35002N6T1

    GT1040

    Abstract: 466 907 A113 AN1955 MRFG35002N6AT1 MRFG35002N6T1
    Text: Document Number: MRFG35002N6 Rev. 2, 1/2008 Freescale Semiconductor Technical Data MRFG35002N6T1 replaced by MRFG35002N6AT1. Gallium Arsenide PHEMT MRFG35002N6T1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35002N6 MRFG35002N6T1 MRFG35002N6AT1. MRFG35002N6T1 GT1040 466 907 A113 AN1955 MRFG35002N6AT1

    GT1040

    Abstract: 100A101 A113 AN1955 MRFG35002N6AT1 MRFG35002N6T1
    Text: Document Number: MRFG35002N6 Rev. 2, 1/2008 Freescale Semiconductor Technical Data Gallium Arsenide PHEMT MRFG35002N6T1 RF Power Field Effect Transistor LIFETIME BUY Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35002N6 MRFG35002N6T1 GT1040 100A101 A113 AN1955 MRFG35002N6AT1 MRFG35002N6T1

    stripline directional couplers

    Abstract: MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1
    Text: RF and IF Quarter 3, 2005 SG1009Q32005 Rev 0 What’s New! Market Product GSM/GPRS Cellular MMM6025 Cellular, GPS, ISM MC13820 TV Broadcast MRF377HR3, MRF377HR5 900 MHz Cellular Base Station MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MRF6S9125NR1, MRF6S9125NBR1, MRF6S9130HR3, MRF6S9130HSR3,


    Original     		PDF SG1009Q32005 MMM6025 MC13820 MRF377HR3, MRF377HR5 MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MRF6S9125NR1, stripline directional couplers MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1

    power transistors table

    Abstract: MW6S010NR1 mrfe6s9060n MHW6342TN Motorola Microwave power Transistor "RF high power Amplifier" MRF6V2300N MRFG35010R1 MRF6P23190HR6 MRF373 PUSH PULL
    Text: RF Products Freescale Semiconductor Selector Guide SG46 Rev. 34 6/2008 RF Product Selector Guide Offering a broad portfolio of RF products, Freescale Semiconductor primarily serves the wireless infrastructure, wireless subscriber, general purpose amplifier, broadcast and industrial markets. Freescale pioneered RF technology and continues to be the leader in the field by providing the quality,


    Original     		PDF

    MC9S12XDP384

    Abstract: MPX7007 SG187 DSPA56371AF150 DSP56F803BU80E MPC8548 DSP56303PV100 9s12dp256, 9s12dg256, 9s12dt256 MRF648 applications mrf6s19100nb
    Text: Freescale Semiconductor Product Selector Guide Cross-Reference Quarter 3, 2005 SG1000CRQ32005 Rev 0 Introduction The Freescale Semiconductor Product Selector Guide Cross-Reference provides a listing of all products documented in the fifteen Freescale Semiconductor Product


    Original     		PDF SG1000CRQ32005 SG1000CRQ32005 MC9S12XDP384 MPX7007 SG187 DSPA56371AF150 DSP56F803BU80E MPC8548 DSP56303PV100 9s12dp256, 9s12dg256, 9s12dt256 MRF648 applications mrf6s19100nb

    MMM6029

    Abstract: NONLINEAR MODEL LDMOS MMM6007 baseband DigRF semiconductor cross index MRF5S9080NB MW6S010 MMM6000 MMH3101NT1 MRF648 applications
    Text: ZigBee Transceivers RF Cellular Subsystems Low Power RF Components RF Transistors RF Amplifier ICs and Modules RF General Purpose Amplifiers CATV Distribution Amplifier Modules Quarter 4, 2005 SG1009Q42005 Rev 0 What’s New! Market Product GSM/GPRS Cellular


    Original     		PDF SG1009Q42005 MMM6025, MMM6035 MC13820 MRF6P3300HR3, MRF6P3300HR5 MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MMM6029 NONLINEAR MODEL LDMOS MMM6007 baseband DigRF semiconductor cross index MRF5S9080NB MW6S010 MMM6000 MMH3101NT1 MRF648 applications

    2312 footprint dimension

    Abstract: A113 AN1955 MRFG35002N6T1 GT1040
    Text: Document Number: MRFG35002N6 Rev. 1, 5/2006 Freescale Semiconductor Technical Data Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35002N6 MRFG35002N6T1 2312 footprint dimension A113 AN1955 MRFG35002N6T1 GT1040