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    MRFG35003NT1 Search Results

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    MRFG35003NT1 Price and Stock

    Rochester Electronics LLC MRFG35003NT1

    RF MOSFET PHEMT FET 12V PLD-1.5
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MRFG35003NT1 Bulk 3,000 18
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    • 100 $17.28
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    NXP Semiconductors MRFG35003NT1

    RF MOSFET PHEMT FET 12V PLD-1.5
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MRFG35003NT1 Reel 1,000
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    Avnet Americas MRFG35003NT1 Reel 4 Weeks 21
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    • 100 $16.2792
    • 1000 $15.6807
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    Freescale Semiconductor MRFG35003NT1

    RF S Band, Gallium Arsenide, N-Channel, High Electron Mobility FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics MRFG35003NT1 3,000 1
    • 1 $17.45
    • 10 $17.45
    • 100 $16.4
    • 1000 $14.83
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    MRFG35003NT1 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MRFG35003NT1 Freescale Semiconductor RF Reference Design Library Gallium Arsenide PHEMT Original PDF
    MRFG35003NT1 Freescale Semiconductor 3.5GHZ3W12V GAAS PLD1.5N Original PDF

    MRFG35003NT1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RF FET TRANSISTOR 3 GHZ

    Abstract: A113 MRFG35003NT1
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35003N Rev. 4, 1/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003NT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35003N MRFG35003NT1 RF FET TRANSISTOR 3 GHZ A113 MRFG35003NT1

    ma 8630

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35003MT1 Rev. 2, 6/2005 Gallium Arsenide PHEMT MRFG35003NT1 MRFG35003MT1 RF Power Field Effect Transistors Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Devices are unmatched and are suitable for use in Class


    Original     		PDF MRFG35003MT1 MRFG35003NT1 MRFG35003MT1 ma 8630

    Marking Z7 Gate Driver

    Abstract: A113 MRFG35003ANT1 MRFG35003NT1 transistor 8772 TC 8644
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35003N Rev. 5, 1/2008 MRFG35003NT1 replaced by MRFG35003ANT1. MRFG35003NT1 Gallium Arsenide PHEMT Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35003N MRFG35003NT1 MRFG35003ANT1. MRFG35003NT1 Marking Z7 Gate Driver A113 MRFG35003ANT1 transistor 8772 TC 8644

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35003MT1 Rev. 3, 1/2006 Replaced by MRFG35003NT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		PDF MRFG35003MT1 MRFG35003NT1.

    marking us capacitor pf l1

    Abstract: marking Z4 CDR33BX104AKWS MRFG35003MT1 MRFG35003NT1 freescale semiconductor body marking freescale power RF products FREESCALE MARKING C3 100A100JP150X ATC
    Text: Freescale Semiconductor Technical Data Available at http://www.freescale.com/rf, Go to Tools Rev. 1, 6/2005 RF Reference Design Library Gallium Arsenide PHEMT MRFG35003NT1 MRFG35003MT1 BWA RF Power Field Effect Transistors Device Characteristics From Device Data Sheet


    Original     		PDF MRFG35003NT1 MRFG35003MT1 MRFG35003NT1 MRFG35003MT1 marking us capacitor pf l1 marking Z4 CDR33BX104AKWS freescale semiconductor body marking freescale power RF products FREESCALE MARKING C3 100A100JP150X ATC

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35003N Rev. 5, 1/2008 MRFG35003NT1 replaced by MRFG35003ANT1. MRFG35003NT1 Gallium Arsenide PHEMT Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35003N MRFG35003NT1 MRFG35003ANT1. MRFG35003NT1

    Marking Z7 Gate Driver

    Abstract: A113 MRFG35003MT1 MRFG35003NT1
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35003MT1 Rev. 3, 1/2006 Replaced by MRFG35003NT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		PDF MRFG35003MT1 MRFG35003NT1. Marking Z7 Gate Driver A113 MRFG35003MT1 MRFG35003NT1

    100B101

    Abstract: ma 8630
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35003N Rev. 5, 1/2008 MRFG35003NT1 Gallium Arsenide PHEMT RF Power Field Effect Transistor LIFETIME BUY Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35003NT1 MRFG35003ANT1. MRFG35003N MRFG35003NT1 MRFG35003N 100B101 ma 8630

    stripline directional couplers

    Abstract: MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1
    Text: RF and IF Quarter 3, 2005 SG1009Q32005 Rev 0 What’s New! Market Product GSM/GPRS Cellular MMM6025 Cellular, GPS, ISM MC13820 TV Broadcast MRF377HR3, MRF377HR5 900 MHz Cellular Base Station MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MRF6S9125NR1, MRF6S9125NBR1, MRF6S9130HR3, MRF6S9130HSR3,


    Original     		PDF SG1009Q32005 MMM6025 MC13820 MRF377HR3, MRF377HR5 MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MRF6S9125NR1, stripline directional couplers MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1

    power transistors table

    Abstract: MW6S010NR1 mrfe6s9060n MHW6342TN Motorola Microwave power Transistor "RF high power Amplifier" MRF6V2300N MRFG35010R1 MRF6P23190HR6 MRF373 PUSH PULL
    Text: RF Products Freescale Semiconductor Selector Guide SG46 Rev. 34 6/2008 RF Product Selector Guide Offering a broad portfolio of RF products, Freescale Semiconductor primarily serves the wireless infrastructure, wireless subscriber, general purpose amplifier, broadcast and industrial markets. Freescale pioneered RF technology and continues to be the leader in the field by providing the quality,


    Original     		PDF

    MC9S12XDP384

    Abstract: MPX7007 SG187 DSPA56371AF150 DSP56F803BU80E MPC8548 DSP56303PV100 9s12dp256, 9s12dg256, 9s12dt256 MRF648 applications mrf6s19100nb
    Text: Freescale Semiconductor Product Selector Guide Cross-Reference Quarter 3, 2005 SG1000CRQ32005 Rev 0 Introduction The Freescale Semiconductor Product Selector Guide Cross-Reference provides a listing of all products documented in the fifteen Freescale Semiconductor Product


    Original     		PDF SG1000CRQ32005 SG1000CRQ32005 MC9S12XDP384 MPX7007 SG187 DSPA56371AF150 DSP56F803BU80E MPC8548 DSP56303PV100 9s12dp256, 9s12dg256, 9s12dt256 MRF648 applications mrf6s19100nb

    MMM6029

    Abstract: NONLINEAR MODEL LDMOS MMM6007 baseband DigRF semiconductor cross index MRF5S9080NB MW6S010 MMM6000 MMH3101NT1 MRF648 applications
    Text: ZigBee Transceivers RF Cellular Subsystems Low Power RF Components RF Transistors RF Amplifier ICs and Modules RF General Purpose Amplifiers CATV Distribution Amplifier Modules Quarter 4, 2005 SG1009Q42005 Rev 0 What’s New! Market Product GSM/GPRS Cellular


    Original     		PDF SG1009Q42005 MMM6025, MMM6035 MC13820 MRF6P3300HR3, MRF6P3300HR5 MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MMM6029 NONLINEAR MODEL LDMOS MMM6007 baseband DigRF semiconductor cross index MRF5S9080NB MW6S010 MMM6000 MMH3101NT1 MRF648 applications