BVces
Abstract: diagram induction AN7254 AN7260 G34N100E2 HGTG34N100E2
Text: HGTG34N100E2 34A, 1000V N-Channel IGBT April 1995 Features Package • 34A, 1000V JEDEC STYLE TO-247 • Latch Free Operation • Typical Fall Time - 710ns EMITTER COLLECTOR GATE COLLECTOR BOTTOM SIDE METAL • High Input Impedance • Low Conduction Loss
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HGTG34N100E2
O-247
710ns
HGTG34N100E2
150oC.
BVces
diagram induction
AN7254
AN7260
G34N100E2
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IRFPG40
Abstract: No abstract text available
Text: IRFPG40 Data Sheet July 1999 4.3A, 1000V, 3.500 Ohm, N-Channel Power MOSFET • 4.3A, 1000V • rDS ON = 3.500Ω • UIS SOA Rating Curve (Single Pulse) • -55oC to 150oC Operating and Storage Temperature Symbol D G Formerly developmental type TA09850.
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IRFPG40
-55oC
150oC
TA09850.
O-247
IRFPG40
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TO247 CASE
Abstract: No abstract text available
Text: IRFPG40 Data Sheet July 1999 4.3A, 1000V, 3.500 Ohm, N-Channel Power MOSFET • 4.3A, 1000V • rDS ON = 3.500Ω • UIS SOA Rating Curve (Single Pulse) • -55oC to 150oC Operating and Storage Temperature Symbol D G Formerly developmental type TA09850.
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IRFPG40
TA09850.
TO247 CASE
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IRFPG40
Abstract: No abstract text available
Text: IRFPG40 Data Sheet January 2002 4.3A, 1000V, 3.500 Ohm, N-Channel Power MOSFET Features • 4.3A, 1000V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRFPG40
-55oC
150oC
IRFPG40
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AN7254
Abstract: AN7260 HGTG20N100D2 G20N100D2
Text: HGTG20N100D2 20A, 1000V N-Channel IGBT May 1995 Features Package • 34A, 1000V JEDEC STYLE TO-247 EMITTER • Latch Free Operation COLLECTOR • Typical Fall Time 520ns GATE • High Input Impedance • Low Conduction Loss COLLECTOR BOTTOM SIDE METAL Description
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HGTG20N100D2
O-247
520ns
HGTG20N100D2
150oC.
AN7254
AN7260
G20N100D2
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RF1S4N100SM
Abstract: RFP4N100 TB334
Text: RFP4N100, RF1S4N100SM Data Sheet 4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs August 1999 File Number 2457.4 Features • 4.3A, 1000V The RFP4N100 and RFP4N100SM are N-Channel enhancement mode silicon gate power field effect transistors. They are designed for use in applications such
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RFP4N100,
RF1S4N100SM
RFP4N100
RFP4N100SM
TB334
TA09850.
RF1S4N100SM
TB334
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G20N100D2
Abstract: AN7254 AN7260 HGTG20N100D2
Text: HGTG20N100D2 S E M I C O N D U C T O R 20A, 1000V N-Channel IGBT May 1995 Features Package • 34A, 1000V JEDEC STYLE TO-247 EMITTER • Latch Free Operation COLLECTOR • Typical Fall Time 520ns GATE • High Input Impedance • Low Conduction Loss COLLECTOR
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HGTG20N100D2
O-247
520ns
HGTG20N100D2
150oC.
G20N100D2
AN7254
AN7260
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G34N100E2
Abstract: AN7254 AN7260 HGTG34N100E2
Text: HGTG34N100E2 S E M I C O N D U C T O R 34A, 1000V N-Channel IGBT April 1995 Features Package • 34A, 1000V JEDEC STYLE TO-247 • Latch Free Operation • Typical Fall Time - 710ns EMITTER COLLECTOR GATE COLLECTOR BOTTOM SIDE METAL • High Input Impedance
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HGTG34N100E2
O-247
710ns
HGTG34N100E2
150oC.
G34N100E2
AN7254
AN7260
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IRFPG42
Abstract: IRFPG40
Text: IRFPG40, IRFPG42 S E M I C O N D U C T O R 4.3A and 3.9A, 1000V, 3.5 and 4.2 Ohm, N-Channel Power MOSFETs January 1998 Features Description • IRFPG40: 4.3A, 1000V, rDS ON = 3.5Ω These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
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IRFPG40,
IRFPG42
TA09850.
IRFPG40
IRFPG42
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IRF P CHANNEL MOSFET 200V 20A
Abstract: P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252
Text: 30V 1000V 200V 100V 0.014Ω 60V RF1S9630SM Note 200V, 6.5A, 0.800Ω RF1S4N100SM 1000V, 4.3A, 3.500Ω RF1S630SM 200V, 9A, 0.400Ω 0A TO 10A S E M I C O N D U C TO R 3.500Ω 0.800Ω 0.500Ω 0.400Ω 0.18Ω 0.300Ω 0.200Ω 0.160Ω 0.080Ω 0.077Ω
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RF1S9630SM
RF1S4N100SM
RF1S630SM
RF1S70N06SM
RF1S70N03SM
O-263AB)
LC96586
IRF P CHANNEL MOSFET 200V 20A
P Channel Power MOSFET IRF
IRF P CHANNEL MOSFET
N CHANNEL MOSFET 10A 1000V
IRF P-Channel FET 200v 20A
IRF P CHANNEL MOSFET 10A 100V
p channel mosfet 100v 70a to-252
IRF P CHANNEL MOSFET 100v
IRF P-Channel FET 100v
IRF P CHANNEL MOSFET TO-252
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relay 1A 125VAC 1A 30VDC
Abstract: low drop 6V 1A relay 0.5A 125VAC 1A 30VDC telecom relay 6V relay
Text: ISSUE: 2001.12.18 Part No. Miniature SMD Relay NRP-11 Industrial & Electrical Components ● ● ● ● CONTACT DIL pitch terminal. High Sensitivity TQ2 Monostable or bistable relays Conforms to FCC part 68 1.5KV surge 1000V dielectric strength CHARACTERISTICS
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NRP-11
30VDC
1000VAC
125VAC
30VDC:
125VAC:
relay 1A 125VAC 1A 30VDC
low drop 6V 1A
relay 0.5A 125VAC 1A 30VDC
telecom relay
6V relay
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ms14-1y
Abstract: MS14 MS14-2Y
Text: MS14 Series Military Solid State Relay With Bi-Directional Output to 240mA & 400V Product Facts • 1000V optical isolation protects control and driver circuitry from load transients. ■ Buffered/current limited input for direct drive from CMOS or TTL logic.
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240mA
240mA
MIL-PRF-28750D
1000Vrms
ms14-1y
MS14
MS14-2Y
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834-1A-B-C-12VDC
Abstract: BC 834 834-1A-F-S
Text: SONG CHUAN 834 Features ϭ Flat pack miniature relays. ϭ Low profile 10.8mm height. ϭ High ratings: 12A 125VAC, 10A 277VAC/30VDC, TV-5, 1/4HP 125/250VAC. ϭ High dielectric strength 2500V between coil and contact and 1000V between contacts. ϭ UL, CSA, TUV approved.
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125VAC,
277VAC/30VDC,
125/250VAC.
2002/95/EC.
34-1A-C
34-1A-F-C
34-1A-V
34-1A-F-V
34-1A-S
34-1A-F-S
834-1A-B-C-12VDC
BC 834
834-1A-F-S
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R9552452
Abstract: ms c class pipes E88991 125VAC 12A 125VAC 277VAC 10A
Text: SONG CHUAN 834 Features ϭ Flat pack miniature relays. ϭ Low profile 10.8mm height. ϭ High ratings: 12A 125VAC, 10A 277VAC/30VDC, TV-5, 1/4HP 125/250VAC. ϭ High dielectric strength 2500V between coil and contact and 1000V between contacts. ϭ UL, CSA, TUV approved.
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125VAC,
277VAC/30VDC,
125/250VAC.
2002/95/EC.
34-1A-C
34-1A-V
34-1A-S
34-1A-F-C
34-1A-F-V
34-1A-F-S
R9552452
ms c class pipes
E88991
125VAC
12A 125VAC
277VAC 10A
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GRM42 monolithic ceramic capacitor
Abstract: MURATA GRM44-1 COG grm x7r 36 100 k grm42 2220 X7R 500 murata CAPACITORS GRM
Text: MONOLITHIC CERAMIC CAPACITORS CERAMIC CHIP CAPACITORS 500 & 1000V RATED COG & X7R TYPE GRM Series These new surface mount components are designed to meet the growing demand for miniature, reliable chip capacitors, especially where high volume automation is
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GRM43-2
GRM44-1
GRM42-6
GRM42-2
GRM42-6
GRM42-2
/178mm
GRM43-2
GRM44-1
GRM42 monolithic ceramic capacitor
MURATA GRM44-1 COG
grm x7r 36 100 k
grm42
2220 X7R 500
murata CAPACITORS GRM
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JRC-23FHS
Abstract: JRC-23F E158859 IEC255 relay 24VDC JRC 7200 IEC255-5 IEC255-7 relay 24VDC, IEC255 JRC23FHS IEC255-19-1
Text: JRC-23F JRC-23F Operation condition Insulation Resistance Dielectric Strength Between contacts Between contact and coil 1000M 50Hz 400V 50Hz 1000V Item 6 of IEC255-5 Item 6 of IEC255-5 Shock resistance Vibration resistance Terminals strength Solderability
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JRC-23F
1000M
IEC255-5
100m/s2
IEC68-2-27
IEC68-2-6
IEC68-2-21
IEC68-2-20
JRC-23FHS
JRC-23F
E158859
IEC255 relay 24VDC
JRC 7200
IEC255-5
IEC255-7
relay 24VDC, IEC255
JRC23FHS
IEC255-19-1
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ATA6870
Abstract: ata6871 advantages of microcontroller based relay one cell battery protection ic diagram simple powerful charge controller block diagram advantages of microcontroller -based relay used f advantages of microcontroller -based over current relay lithium ion battery for electric cars hybrid lithium ion battery relay fuel level controller circuit diagram
Text: Atmel Automotive Compilation, Vol. 6 Standard Products New Li-Ion Battery Management Chipset ATA6870, ATA6871 for Electrical and Hybrid Vehicles Claus Mochel Electric or hybrid vehicles offer teries. These Li-Ion batteries offer and 500V, and even up to 1000V or
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ATA6870,
ATA6871
10ents
ATA6870s
ATA6871s
ATA6870
ATA6870
ata6871
advantages of microcontroller based relay
one cell battery protection ic diagram
simple powerful charge controller block diagram
advantages of microcontroller -based relay used f
advantages of microcontroller -based over current relay
lithium ion battery for electric cars
hybrid lithium ion battery
relay fuel level controller circuit diagram
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Untitled
Abstract: No abstract text available
Text: IRFPG40 Semiconductor D ata S h eet Ju ly 1999 4.3A, 1000V, 3.500 Ohm, N-Channel Power MOSFET F ile N u m b er 2879.2 Features • 4.3A, 1000V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,
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PDF
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IRFPG40
|
34N100E2
Abstract: TA9895
Text: HGTG34N100E2 34A, 1000V N-Channel IGBT April 1995 Package Features JE D EC STYLE TO -247 • 34A, 1000V EMITTER • Latch Free Operation • Typical Fall Time •710ns • High Input Impedance • Low Conduction Loss Description The HGTG34N100E2 is a MOS gated high voltage switching
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PDF
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HGTG34N100E2
710ns
HGTG34N100E2
34N100E2
TA9895
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Untitled
Abstract: No abstract text available
Text: S IRFPG40, IRFPG42 S e m ico n d ucto r y 4.3A and 3.9A, 1000V, 3.5 and 4.2 Ohm, N-Channel Power MOSFETs January 1998 Description Features • IRFPG40: 4.3A, 1000V, r D S O N = These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power
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PDF
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IRFPG40,
IRFPG42
IRFPG40:
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G20N100D2
Abstract: GE 639 transistor 901 u 620 tg g20n100 443 20N TSC-1000
Text: S m HGTG20N100D2 a r r ì 20A, 1000V N-Channel IGBT M ay 1995 Features Package • 34 A, 1000V JEDEC STYLE TO-247 EMfTTER • Latch Free Operation • Typical Fall Time 520ns • High Input Impedance • Low Conduction Loss Description The HG TG 20N 100D 2 is a MOS gated high voltage switching
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HGTG20N100D2
O-247
520ns
G20N100D2
GE 639 transistor
901 u 620 tg
g20n100
443 20N
TSC-1000
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Untitled
Abstract: No abstract text available
Text: IRFPG40, IRFPG42 fÇ j HARRIS S E M I C O N D U C T O R 4.3A and 3.9A, 1000V, 3.5 and 4.2 Ohm, N-Channel Power MOSFETs January 1998 Features Description • IRFPG40: 4.3A, 1000V, rDS 0 N = 3 .5 0 These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
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OCR Scan
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PDF
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IRFPG40,
IRFPG42
IRFPG40
|
IRFPG
Abstract: RFPG40
Text: IRFPG40 IRFPG42 ¡2 HARRIS High Voltage N-Channel Enhancement Mode Power Field Effect Transistor August 1991 F e a tu re s • Package T O -2 4 7 IRFPG40: 4.3A, 1000V, r Ds 0 N = 3 .5 fi • IRFPG42: 3.9A, 1000V, r D S (O N ) TOP VIEW = 4 .2 fl • UIS SOA Rating Curve (Single Pulse)
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PDF
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IRFPG40
IRFPG42
IRFPG40:
IRFPG42:
IRFPG42
/RFPG40,
IRFPG
RFPG40
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photovoltaic diode
Abstract: No abstract text available
Text: POWER MOSFET SOLID STATE AC/DC RELAY SPST/NO DIH-121 DIH-122* Features • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Low level logic compatibility Optical Isolation, to 1000V DC Low on resistance Low off-set voltage Low off-state leakage current High speed switching response
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DIH-121
Mil-R-28750
DIH-122*
DIH-121
DIH-122
photovoltaic diode
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