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    HGTG34N100E2 Price and Stock

    Rochester Electronics LLC HGTG34N100E2

    55A, 1000V N-CHANNEL IGBT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HGTG34N100E2 Bulk 1,350 37
    • 1 -
    • 10 -
    • 100 $8.16
    • 1000 $8.16
    • 10000 $8.16
    		Buy Now

    Renesas Electronics Corporation HGTG34N100E2

    - Bulk (Alt: HGTG34N100E2)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas HGTG34N100E2 Bulk 4 Weeks 45
    • 1 -
    • 10 -
    • 100 $8.0372
    • 1000 $7.8108
    • 10000 $7.5844
    		Buy Now

    Harris Semiconductor HGTG34N100E2

    55A, 1000V N-Channel IGBT '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics HGTG34N100E2 1,350 1
    • 1 $8.25
    • 10 $8.25
    • 100 $7.75
    • 1000 $7.01
    • 10000 $7.01
    		Buy Now

    HGTG34N100E2 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HGTG34N100E2 Harris Semiconductor 34A, 1000V N-Channel IGBT Original PDF
    HGTG34N100E2 Intersil 34A, 1000V N-Channel IGBT Original PDF

    HGTG34N100E2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BVces

    Abstract: diagram induction AN7254 AN7260 G34N100E2 HGTG34N100E2
    Text: HGTG34N100E2 34A, 1000V N-Channel IGBT April 1995 Features Package • 34A, 1000V JEDEC STYLE TO-247 • Latch Free Operation • Typical Fall Time - 710ns EMITTER COLLECTOR GATE COLLECTOR BOTTOM SIDE METAL • High Input Impedance • Low Conduction Loss


    Original     		PDF HGTG34N100E2 O-247 710ns HGTG34N100E2 150oC. BVces diagram induction AN7254 AN7260 G34N100E2

    G34N100E2

    Abstract: AN7254 AN7260 HGTG34N100E2
    Text: HGTG34N100E2 S E M I C O N D U C T O R 34A, 1000V N-Channel IGBT April 1995 Features Package • 34A, 1000V JEDEC STYLE TO-247 • Latch Free Operation • Typical Fall Time - 710ns EMITTER COLLECTOR GATE COLLECTOR BOTTOM SIDE METAL • High Input Impedance


    Original     		PDF HGTG34N100E2 O-247 710ns HGTG34N100E2 150oC. G34N100E2 AN7254 AN7260

    Untitled

    Abstract: No abstract text available
    Text: H AR Fas HGTG34N100E2 December 1993 34A, 1000V N-Channel IGBT Package Features • JEDEC STYLE TO-247 TOP VIE N 34 Amp 1000 Volt • Latch Free Operation 3 FMITTFR • Typical Fall T im e-710ns • COLLECTOR BOTTOM SIDE METAL I , High Input Impedance


    OCR Scan     		PDF HGTG34N100E2 O-247 e-710ns

    Untitled

    Abstract: No abstract text available
    Text: HARRIS SEMICOND SECTOR U bflE » ^1302271 OGSOSMl 233 « H A S HGTG34N100E2 34A, 1000V N-Channel IGBT Decem ber 1993 Package Features JEDEC STYLE TO-247 TOP V IB V • 34 Am p 1000 Volt • Latch Free Operation I • Typical Fall T im e - 710ns COLLECTOR


    OCR Scan     		PDF HGTG34N100E2 O-247 710ns HGTG34N100E2*

    34N100E2

    Abstract: TA9895
    Text: HGTG34N100E2 34A, 1000V N-Channel IGBT April 1995 Package Features JE D EC STYLE TO -247 • 34A, 1000V EMITTER • Latch Free Operation • Typical Fall Time •710ns • High Input Impedance • Low Conduction Loss Description The HGTG34N100E2 is a MOS gated high voltage switching


    OCR Scan     		PDF HGTG34N100E2 710ns HGTG34N100E2 34N100E2 TA9895

    igbt 400V 20A

    Abstract: igbt 500V 15A diode 500v 10A diode 10a 400v 20A 500v igbt igbt 1000v 10A igbt 1200V 20A DIODE 20A igbt 400V 5A current sensing 400V
    Text: I- MCT/IGBT/DIODES 3 INSULATED GATE BIPOLAR TRANSISTORS IGBTs PAGE SELECTION G U ID E .


    OCR Scan     		PDF HGTD6N40E1, HGTD6N50E1, HGTD10N40F1, HGTD10N50F1, HGTH12N40C1, HGTM12N40C1, HGTP10N40C1, HGTM12N60D1 HGTP12N60D1 HGTH20N40C1, igbt 400V 20A igbt 500V 15A diode 500v 10A diode 10a 400v 20A 500v igbt igbt 1000v 10A igbt 1200V 20A DIODE 20A igbt 400V 5A current sensing 400V

    TRANSISTOR BIPOLAR 400V 20A

    Abstract: igbt 1000v 10A P-Channel IGBT igbt 500V 15A igbt 40A 600V P-CHANNEL 400V 15A N channel 600v 20a IGBT igbt 400V 40A igbt 400V 20A 400V P-Channel IGBT
    Text: — MCT/IGBT/DIODES 3 INSULATED GATE BIPOLAR TRANSISTORS PAGE SELECTION G U ID E .


    OCR Scan     		PDF HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S HGTP6N40E1D, HGTP6N50E1D HGTP10N40C1, HGTH12N40C1, HGTP10N40C1D, HGTP10N40E1D, TRANSISTOR BIPOLAR 400V 20A igbt 1000v 10A P-Channel IGBT igbt 500V 15A igbt 40A 600V P-CHANNEL 400V 15A N channel 600v 20a IGBT igbt 400V 40A igbt 400V 20A 400V P-Channel IGBT

    equivalent data book of 10N60 mosfet

    Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
    Text: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:


    OCR Scan     		PDF 1-800-4HARRIS equivalent data book of 10N60 mosfet MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40