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    RF1S4N100SM Price and Stock

    Rochester Electronics LLC RF1S4N100SM9A

    MOSFET N-CH 1000V 4.3A TO263AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RF1S4N100SM9A Bulk 187 89
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    • 100 $3.39
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    Renesas Electronics Corporation RF1S4N100SM9A

    - Bulk (Alt: RF1S4N100SM9A)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas RF1S4N100SM9A Bulk 4 Weeks 107
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    • 1000 $3.29
    • 10000 $3.196
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    Harris Semiconductor RF1S4N100SM9A

    24V, N-Channel POWER MOSFET '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics RF1S4N100SM9A 187 1
    • 1 $3.42
    • 10 $3.42
    • 100 $3.22
    • 1000 $2.91
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    RF1S4N100SM Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RF1S4N100SM Fairchild Semiconductor 4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFET Original PDF
    RF1S4N100SM Harris Semiconductor Power MOSFET Product Matrix Original PDF
    RF1S4N100SM Intersil 4.3A, 1000V, 3.500 ?, High Voltage, N-Channel Power MOSFETs Original PDF
    RF1S4N100SM Toshiba Power MOSFETs Cross Reference Guide Original PDF

    RF1S4N100SM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RF1S4N100SM

    Abstract: RFP4N100 TB334
    Text: RFP4N100, RF1S4N100SM Data Sheet 4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs August 1999 File Number 2457.4 Features • 4.3A, 1000V The RFP4N100 and RFP4N100SM are N-Channel enhancement mode silicon gate power field effect transistors. They are designed for use in applications such


    Original     		PDF RFP4N100, RF1S4N100SM RFP4N100 RFP4N100SM TB334 TA09850. RF1S4N100SM TB334

    f1s4n100

    Abstract: No abstract text available
    Text: <^£.mi- 2onditctoi LPioducti, Una. TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. RFP4N100, RF1S4N100SM 4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs The RFP4N100 and RFP4N100SM are N-Channel


    Original     		PDF RFP4N100, RF1S4N100SM RFP4N100 RFP4N100SM 00A/US f1s4n100

    RFP4N100

    Abstract: RF1S4N100SM TB334
    Text: RFP4N100, RF1S4N100SM Data Sheet 4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs The RFP4N100 and RFP4N100SM are N-Channel enhancement mode silicon gate power field effect transistors. They are designed for use in applications such as switching regulators, switching converters, motor


    Original     		PDF RFP4N100, RF1S4N100SM RFP4N100 RFP4N100SM -55oC 150oC TB334 RF1S4N100SM TB334

    RF1S4N100SM

    Abstract: RFP4N100 TB334
    Text: RFP4N100, RF1S4N100SM Data Sheet Title FP4 00, P4 00S bt 3A, 00V, 00 m, gh lte, Cha el wer OST utho eyrds ter- August 1999 4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs Features The RFP4N100 and RFP4N100SM are N-Channel enhancement mode silicon gate power field effect


    Original     		PDF RFP4N100, RF1S4N100SM RFP4N100 RFP4N100SM -55oC 150oC RF1S4N100SM TB334

    IRF P CHANNEL MOSFET 200V 20A

    Abstract: P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252
    Text: 30V 1000V 200V 100V 0.014Ω 60V RF1S9630SM Note 200V, 6.5A, 0.800Ω RF1S4N100SM 1000V, 4.3A, 3.500Ω RF1S630SM 200V, 9A, 0.400Ω 0A TO 10A S E M I C O N D U C TO R 3.500Ω 0.800Ω 0.500Ω 0.400Ω 0.18Ω 0.300Ω 0.200Ω 0.160Ω 0.080Ω 0.077Ω


    Original     		PDF RF1S9630SM RF1S4N100SM RF1S630SM RF1S70N06SM RF1S70N03SM O-263AB) LC96586 IRF P CHANNEL MOSFET 200V 20A P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252

    irf540n irf640

    Abstract: IRF630 complementary IRF840 complementary irf630 irf640 IRF730 complementary irfp460 complementary MOSFET IRF540n complementary Complementary MOSFETs buz11 IRF9540 complementary Irfp250 irfp460
    Text: MOSFET Selection Trees Power MOSFET Products N-CHANNEL MOSFETs N-CHANNEL STANDARD GATE MOSFETs BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S HUF75309P3 HUF75309T3ST HUF75321D3 HUF75321D3S


    Original     		PDF BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 irf540n irf640 IRF630 complementary IRF840 complementary irf630 irf640 IRF730 complementary irfp460 complementary MOSFET IRF540n complementary Complementary MOSFETs buz11 IRF9540 complementary Irfp250 irfp460

    FQB27N25

    Abstract: FQB46N15 FDB2532 FQB27P06 FDB6644 FDB6670AL FDB6676 FDB7030L FDB7042L FDB7045L
    Text: Discrete MOSFET TO-263 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-263(D2PAK) N-Channel ISL9N302AS3ST 30 Single 0.0023 0.0033 - - 110 75 345 FDB8030L 30 Single 0.0035


    Original     		PDF O-263 O-263 ISL9N302AS3ST FDB8030L ISL9N303AS3ST FDB7045L ISL9N304AS3ST FDB6676 FDB6670AL 30VDS FQB27N25 FQB46N15 FDB2532 FQB27P06 FDB6644 FDB6670AL FDB6676 FDB7030L FDB7042L FDB7045L

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    IRF510N

    Abstract: MOSFET Selection Guide Power MOSFET Selection Guide IRFR110N HRF3205 equivalent RFD7N10LESM IRFD110 IRFD9120 IRFP9150 irfu9220
    Text: Power MOSFET Selection Guide Power MOSFET Products DUAL DIE POWER MOSFETs BVDSS VOLTS ID AMPS rDS ON OHMS VGS = 10V rDS(ON) OHMS VGS = 5V TYPE MS-012AA (SO-8) TS-001AA MO-169AB 12 3.50 - 0.050 Dual N RF1K49090 - - 12 3.50 - 0.130 Dual P RF1K49093 - - 12 2.5/3.5


    Original     		PDF MS-012AA TS-001AA MO-169AB RF1K49090 RF1K49093 RF1K49092 RF3S49092SM RF3V49092 RF1K49223 RF1K49088 IRF510N MOSFET Selection Guide Power MOSFET Selection Guide IRFR110N HRF3205 equivalent RFD7N10LESM IRFD110 IRFD9120 IRFP9150 irfu9220

    SSP6N60A

    Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
    Text: March 2002 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide March 2002 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . .2


    Original     		PDF SC70-6 OT-23) FDR8321L FDR8521L FDFS2P106A FDFS2P103 FDFS2P102 SSP6N60A IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A

    complementary of irf830

    Abstract: IRF630 complementary irf630 irf640 irf540n irf640 IRF640 irf510 IRFP150 Irfp250 irfp460 IRF640 IRFP150N IRF610 complementary
    Text: Power MOSFET Selection Trees TM N-CHANNEL STANDARD GATE MOSFETs BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S HUF75309P3 HUF75309T3ST HUF75321D3 HUF75321D3S HUF75321P3 HUF75321S3S HUF75329D3


    Original     		PDF BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 complementary of irf830 IRF630 complementary irf630 irf640 irf540n irf640 IRF640 irf510 IRFP150 Irfp250 irfp460 IRF640 IRFP150N IRF610 complementary

    F1S4N100

    Abstract: fp4n100
    Text: intensi RFP4N100, RF1S4N100SM D ata S h e e t 4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs The RFP4N100 and RFP4N100SM are N-Channel enhancement mode silicon gate power field effect transistors. They are designed for use in applications such


    OCR Scan     		PDF RFP4N100, RF1S4N100SM RFP4N100 RFP4N100SM TA09850. TB334 RF1S4N100SM F1S4N100 fp4n100

    Untitled

    Abstract: No abstract text available
    Text: RFP4N100, RF1S4N100SM D ata S h eet 4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs The RFP4N100 and RFP4N100SM are N-Channel enhancem ent mode silicon gate power field effect transistors. They are designed for use in applications such as switching regulators, switching converters, motor


    OCR Scan     		PDF RFP4N100, RF1S4N100SM RFP4N100 RFP4N100SM TB334

    RF1S42N03L

    Abstract: No abstract text available
    Text: HARRI S DI S CRE TE P O W E R MOS F E T LINE T O - 2 5 2 PACKAGE STANDARD GATE DEVICES V dss V r DS(ON) 1 (A ) T O -2 5 2 A A CHANNEL 20V 0.0250 20A RFD20N02SM N 50V 0.3000 8A RFD8P05SM P 0.0470 16A RFD16N05SM N 0.100Q 14A RFD14N05SM N 0.1500 15A RFD15P05SM


    OCR Scan     		PDF RFD20N02SM RFD8P05SM RFD16N05SM RFD14N05SM RFD15P05SM RFD16N06SM RFD14N06SM RFD15P06SM RFD8P06ESM RFD3055SM RF1S42N03L