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    RFP4N100 Price and Stock

    onsemi RFP4N100

    MOSFET N-CH 1000V 4.3A TO220-3
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    DigiKey RFP4N100 Tube
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    Fairchild Semiconductor Corporation RFP4N100

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    Bristol Electronics RFP4N100 54 2
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    Quest Components RFP4N100 43
    • 1 $4.8
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    RFP4N100 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Type PDF
    RFP4N100 Fairchild Semiconductor 4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs Original PDF
    RFP4N100 Fairchild Semiconductor 4.3A, 1000V, 3.500 ?, High Voltage, N-Channel Power MOSFETs Original PDF
    RFP4N100 Harris Semiconductor Power MOSFET Selection Guide Original PDF
    RFP4N100 Intersil 4.3A, 1000V, 3.500 ?, High Voltage, N-Channel Power MOSFETs Original PDF
    RFP4N100 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    RFP4N100 Unknown Shortform Datasheet & Cross References Data Short Form PDF

    RFP4N100 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RF1S4N100SM

    Abstract: RFP4N100 TB334
    Text: RFP4N100, RF1S4N100SM Data Sheet 4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs August 1999 File Number 2457.4 Features • 4.3A, 1000V The RFP4N100 and RFP4N100SM are N-Channel enhancement mode silicon gate power field effect transistors. They are designed for use in applications such


    Original     		PDF RFP4N100, RF1S4N100SM RFP4N100 RFP4N100SM TB334 TA09850. RF1S4N100SM TB334

    f1s4n100

    Abstract: No abstract text available
    Text: <^£.mi- 2onditctoi LPioducti, Una. TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. RFP4N100, RF1S4N100SM 4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs The RFP4N100 and RFP4N100SM are N-Channel


    Original     		PDF RFP4N100, RF1S4N100SM RFP4N100 RFP4N100SM 00A/US f1s4n100

    RFP4N100

    Abstract: RF1S4N100SM TB334
    Text: RFP4N100, RF1S4N100SM Data Sheet 4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs The RFP4N100 and RFP4N100SM are N-Channel enhancement mode silicon gate power field effect transistors. They are designed for use in applications such as switching regulators, switching converters, motor


    Original     		PDF RFP4N100, RF1S4N100SM RFP4N100 RFP4N100SM -55oC 150oC TB334 RF1S4N100SM TB334

    RF1S4N100SM

    Abstract: RFP4N100 TB334
    Text: RFP4N100, RF1S4N100SM Data Sheet Title FP4 00, P4 00S bt 3A, 00V, 00 m, gh lte, Cha el wer OST utho eyrds ter- August 1999 4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs Features The RFP4N100 and RFP4N100SM are N-Channel enhancement mode silicon gate power field effect


    Original     		PDF RFP4N100, RF1S4N100SM RFP4N100 RFP4N100SM -55oC 150oC RF1S4N100SM TB334

    back-to-back scr drivers

    Abstract: No abstract text available
    Text: FOD420, FOD4208, FOD4216, FOD4218 6-Pin DIP Triac Drivers Features Description • 300mA on-state current The FOD420, FOD4208, FOD4216 and FOD4218 devices consist of an infrared emitting diode coupled to a hybrid random phase triac formed with two inverse


    Original     		PDF FOD420, FOD4208, FOD4216, FOD4218 300mA back-to-back scr drivers

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    MOC3011 equivalent

    Abstract: TRIAC FT 12 FKPF12N80 triac drive circuit thyristor 6-pulse full wave firing circuit FOD4208 Triac 1000 watt FOD420 FOD4216 FOD4218
    Text: FOD420, FOD4208, FOD4216, FOD4218 6-Pin DIP Triac Drivers Features Description • 300mA on-state current The FOD420, FOD4208, FOD4216 and FOD4218 devices consist of an infrared emitting diode coupled to a hybrid random phase triac formed with two inverse


    Original     		PDF FOD420, FOD4208, FOD4216, FOD4218 300mA FOD4216 MOC3011 equivalent TRIAC FT 12 FKPF12N80 triac drive circuit thyristor 6-pulse full wave firing circuit FOD4208 Triac 1000 watt FOD420 FOD4218

    how to interface optocoupler with triac

    Abstract: Optocoupler with triac Zero Crossing Triac Driver Output Optocoupler Phototriac zero voltage crossing OPTOCOUPLER trigger thyristor scr Switching diode 6pin inverse-parallel scr drive circuit Optocoupler with thyristor Optocoupler with triac circuits phototriac
    Text: MOC3061M, MOC3062M, MOC3063M, MOC3162M, MOC3163M 6-Pin DIP Zero-Cross Phototriac Driver Optocoupler 600 Volt Peak Features Description • Simplifies logic control of 115/240 VAC power The MOC306XM and MOC316XM devices consist of a GaAs infrared emitting diode optically coupled to a


    Original     		PDF MOC3061M, MOC3062M, MOC3063M, MOC3162M, MOC3163M MOC306XM MOC316XM MOC316X-M) MOC306X-M) MOC306XM, how to interface optocoupler with triac Optocoupler with triac Zero Crossing Triac Driver Output Optocoupler Phototriac zero voltage crossing OPTOCOUPLER trigger thyristor scr Switching diode 6pin inverse-parallel scr drive circuit Optocoupler with thyristor Optocoupler with triac circuits phototriac

    MOC3062M

    Abstract: No abstract text available
    Text: 6-PIN DIP ZERO-CROSS PHOTOTRIAC DRIVER OPTOCOUPLER 600V PEAK MOC3061-M MOC3062-M MOC3063-M MOC3162-M PACKAGE MOC3163-M SCHEMATIC ANODE 1 6 MAIN TERM. 6 6 5 NC* CATHODE 2 1 N/C 3 1 ZERO CROSSING CIRCUIT 4 MAIN TERM. *DO NOT CONNECT (TRIAC SUBSTRATE) 6 1 DESCRIPTION


    Original     		PDF MOC3061-M MOC3062-M MOC3063-M MOC3162-M MOC3163-M MOC306X-M MOC316X-M MOC3062M

    std2n52

    Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
    Text: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232


    Original     		PDF 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 std2n52 stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent

    fod4116

    Abstract: FOD4118
    Text: FOD410, FOD4108, FOD4116, FOD4118 6-Pin DIP Zero-Cross Triac Drivers Features Description • 300mA on-state current The FOD410, FOD4108, FOD4116 and FOD4118 devices consist of an infrared emitting diode coupled to a hybrid triac formed with two inverse parallel SCRs which


    Original     		PDF FOD410, FOD4108, FOD4116, FOD4118 300mA FOD4116 FOD4118

    triac MOC3011

    Abstract: No abstract text available
    Text: FOD420, FOD4208, FOD4216, FOD4218 6-Pin DIP Triac Drivers Features Description • 300mA on-state current The FOD420, FOD4208, FOD4216 and FOD4218 devices consist of an infrared emitting diode coupled to a hybrid random phase triac formed with two inverse


    Original     		PDF FOD420, FOD4208, FOD4216, FOD4218 300mA FOD4216 triac MOC3011

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696

    FQP630

    Abstract: FQP27N25 FQP55N10 IRF630B FQP630 equivalent SFP9634 irf640b FDP6035L IRF620B SSP7N60A
    Text: Discrete MOSFET TO-220 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-220 N-Channel ISL9N302AP3 30 Single 0.0025 0.0033 - - 110 75 345 FDP8030L 30 Single 0.0035 0.0045


    Original     		PDF O-220 O-220 ISL9N302AP3 FDP8030L ISL9N303AP3 FDP7045L ISL9N304AP3 FDP6676 FDP6670AL SFP9Z24 FQP630 FQP27N25 FQP55N10 IRF630B FQP630 equivalent SFP9634 irf640b FDP6035L IRF620B SSP7N60A

    irf540n irf640

    Abstract: IRF630 complementary IRF840 complementary irf630 irf640 IRF730 complementary irfp460 complementary MOSFET IRF540n complementary Complementary MOSFETs buz11 IRF9540 complementary Irfp250 irfp460
    Text: MOSFET Selection Trees Power MOSFET Products N-CHANNEL MOSFETs N-CHANNEL STANDARD GATE MOSFETs BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S HUF75309P3 HUF75309T3ST HUF75321D3 HUF75321D3S


    Original     		PDF BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 irf540n irf640 IRF630 complementary IRF840 complementary irf630 irf640 IRF730 complementary irfp460 complementary MOSFET IRF540n complementary Complementary MOSFETs buz11 IRF9540 complementary Irfp250 irfp460

    IRF540 complementary

    Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
    Text: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3


    Original     		PDF RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L IRF540 complementary IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR

    triac drive circuit

    Abstract: No abstract text available
    Text: FOD420, FOD4208, FOD4216, FOD4218 6-Pin DIP Triac Drivers Features Description • 300mA on-state current The FOD420, FOD4208, FOD4216 and FOD4218 devices consist of an infrared emitting diode coupled to a hybrid random phase triac formed with two inverse


    Original     		PDF FOD420, FOD4208, FOD4216, FOD4218 300mA triac drive circuit

    MOC3062M

    Abstract: No abstract text available
    Text: 6-PIN DIP ZERO-CROSS PHOTOTRIAC DRIVER OPTOCOUPLER 600V PEAK MOC3061-M MOC3062-M MOC3063-M MOC3162-M PACKAGE MOC3163-M SCHEMATIC ANODE 1 6 MAIN TERM. 6 6 CATHODE 2 5 NC* 1 N/C 3 1 ZERO CROSSING CIRCUIT 4 MAIN TERM. *DO NOT CONNECT (TRIAC SUBSTRATE) 6 1 DESCRIPTION


    Original     		PDF MOC3061-M MOC3062-M MOC3063-M MOC3162-M MOC3163-M MOC306X-M MOC316X-M MOC3062M

    FOD4118

    Abstract: No abstract text available
    Text: FOD410, FOD4108, FOD4116, FOD4118 6-Pin DIP Zero-Cross Triac Drivers Features Description • 300mA on-state current The FOD410, FOD4108, FOD4116 and FOD4118 devices consist of an infrared emitting diode coupled to a hybrid triac formed with two inverse parallel SCRs which


    Original     		PDF FOD410, FOD4108, FOD4116, FOD4118 300mA

    back-to-back scr drivers

    Abstract: fod4208 250VPP
    Text: FOD420, FOD4208, FOD4216, FOD4218 6-Pin DIP Triac Drivers Features Description • 300mA on-state current The FOD420, FOD4208, FOD4216 and FOD4218 devices consist of an infrared emitting diode coupled to a hybrid random phase triac formed with two inverse


    Original     		PDF FOD420, FOD4208, FOD4216, FOD4218 300mA back-to-back scr drivers fod4208 250VPP

    F1S4N100

    Abstract: fp4n100
    Text: intensi RFP4N100, RF1S4N100SM D ata S h e e t 4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs The RFP4N100 and RFP4N100SM are N-Channel enhancement mode silicon gate power field effect transistors. They are designed for use in applications such


    OCR Scan     		PDF RFP4N100, RF1S4N100SM RFP4N100 RFP4N100SM TA09850. TB334 RF1S4N100SM F1S4N100 fp4n100

    FP4N100

    Abstract: No abstract text available
    Text: RFP4N100 33 HARRIS August 1991 High Voltage N-Channel Enhancem ent-M ode Power Field-Effect Transistors Features Package T O -2 2 0 A B T O P V IE W • 4.3A, 1000V • rDS on = 3 .5 0 • UIS S O A Rating C u rve (Single Pulse) • - 5 5 ° C to + 1 5 0 °C O perating Tem perature


    OCR Scan     		PDF RFP4N100 FP4N100

    Untitled

    Abstract: No abstract text available
    Text: RFP4N100, RF1S4N100SM D ata S h eet 4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs The RFP4N100 and RFP4N100SM are N-Channel enhancem ent mode silicon gate power field effect transistors. They are designed for use in applications such as switching regulators, switching converters, motor


    OCR Scan     		PDF RFP4N100, RF1S4N100SM RFP4N100 RFP4N100SM TB334

    4311 mosfet transistor

    Abstract: D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r
    Text: - POWER MOSFETs 4 N-CHANNEL POWER MOSFETs PAGE 2N6755, 2N6756 N-Channel Enhancement-Mode Power Field-Effect Transistors. 2N6757, 2N6758 N-Channel Enhancement-Mode Power Field-Effect Transistors. 4-11 2N6759, 2N6760


    OCR Scan     		PDF 2N6755, 2N6756 2N6757, 2N6758 2N6759, 2N6760 2N6761, 2N6762 2N6763, 2N6764 4311 mosfet transistor D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r