RF1S4N100SM
Abstract: RFP4N100 TB334
Text: RFP4N100, RF1S4N100SM Data Sheet 4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs August 1999 File Number 2457.4 Features • 4.3A, 1000V The RFP4N100 and RFP4N100SM are N-Channel enhancement mode silicon gate power field effect transistors. They are designed for use in applications such
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RFP4N100,
RF1S4N100SM
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TB334
TA09850.
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f1s4n100
Abstract: No abstract text available
Text: <^£.mi- 2onditctoi LPioducti, Una. TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. RFP4N100, RF1S4N100SM 4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs The RFP4N100 and RFP4N100SM are N-Channel
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RFP4N100,
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RFP4N100
Abstract: RF1S4N100SM TB334
Text: RFP4N100, RF1S4N100SM Data Sheet 4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs The RFP4N100 and RFP4N100SM are N-Channel enhancement mode silicon gate power field effect transistors. They are designed for use in applications such as switching regulators, switching converters, motor
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RFP4N100,
RF1S4N100SM
RFP4N100
RFP4N100SM
-55oC
150oC
TB334
RF1S4N100SM
TB334
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RF1S4N100SM
Abstract: RFP4N100 TB334
Text: RFP4N100, RF1S4N100SM Data Sheet Title FP4 00, P4 00S bt 3A, 00V, 00 m, gh lte, Cha el wer OST utho eyrds ter- August 1999 4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs Features The RFP4N100 and RFP4N100SM are N-Channel enhancement mode silicon gate power field effect
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RFP4N100,
RF1S4N100SM
RFP4N100
RFP4N100SM
-55oC
150oC
RF1S4N100SM
TB334
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F1S4N100
Abstract: fp4n100
Text: intensi RFP4N100, RF1S4N100SM D ata S h e e t 4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs The RFP4N100 and RFP4N100SM are N-Channel enhancement mode silicon gate power field effect transistors. They are designed for use in applications such
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OCR Scan
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RFP4N100,
RF1S4N100SM
RFP4N100
RFP4N100SM
TA09850.
TB334
RF1S4N100SM
F1S4N100
fp4n100
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Untitled
Abstract: No abstract text available
Text: RFP4N100, RF1S4N100SM D ata S h eet 4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs The RFP4N100 and RFP4N100SM are N-Channel enhancem ent mode silicon gate power field effect transistors. They are designed for use in applications such as switching regulators, switching converters, motor
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OCR Scan
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PDF
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RFP4N100,
RF1S4N100SM
RFP4N100
RFP4N100SM
TB334
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