irl 3710
Abstract: 87541 ECUV1H150JCV pf 83744 A113 A114 A115 AN1955 C101 FR408
Text: Freescale Semiconductor Technical Data Document Number: MMG3004NT1 Rev. 0, 11/2005 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3004NT1 Broadband High Linearity Amplifier The MMG3004NT1 is a General Purpose Amplifier that is internally prematched and designed for a broad range of Class A, small- signal, high
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MMG3004NT1
MMG3004NT1
irl 3710
87541
ECUV1H150JCV
pf 83744
A113
A114
A115
AN1955
C101
FR408
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data MRFG35010MT1 Rev. 4, 7/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistors MRFG35010NT1 MRFG35010MT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Devices are unmatched and are suitable for use in Class
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MRFG35010MT1
MRFG35010NT1
MRFG35010MT1
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ATC100A101JP150
Abstract: GT5040 MRFG35010ANT1 ATC100B101JP500XT 080514R7BBS ATC100A100JP150X ATC100A101JP150XT Transistor Z14
Text: Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 3, 12/2012 Gallium Arsenide pHEMT RF Power Field Effect Transistor MRFG35010ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB
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MRFG35010AN
MRFG35010ANT1
DataMRFG35010AN
ATC100A101JP150
GT5040
MRFG35010ANT1
ATC100B101JP500XT
080514R7BBS
ATC100A100JP150X
ATC100A101JP150XT
Transistor Z14
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6 017 03 61
Abstract: A113 MRFG35010MT1 MRFG35010NT1 D55342M07
Text: Freescale Semiconductor Technical Data Document Number: MRFG35010MT1 Rev. 5, 2/2006 Replaced by MRFG35010NT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.
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MRFG35010MT1
MRFG35010NT1.
6 017 03 61
A113
MRFG35010MT1
MRFG35010NT1
D55342M07
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panasonic inverter dv 707 manual
Abstract: 018T A423 Mosfet FTR 03-E Arcotronics 1.27.6 nsl 7053 mkp DX 3500 manual Honeywell DBM 01A Polyester capacitors 823k 250V SPRAGUE powerlytic 36Dx sprague 68D
Text: PASSIVE COMPONENTS Resistors Networks and Arrays Bourns. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 590, 591, 592 Caddock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 593 CTS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 594
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMG3003NT1/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line Heterojunction Bipolar Transistor Technology InGaP HBT MMG3003NT1 Broadband High Linearity Amplifier The MMG3003NT1 is a General Purpose Amplifier that is internally
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MMG3003NT1/D
MMG3003NT1
MMG3003NT1
MMG3003NT1/D
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transistor std 13007
Abstract: ATC 601 IPC transistor E 13007 FET 4016 MRFG35010 A113 MRFG35010NT1 j 13007 TRANSISTOR 1309-2
Text: Freescale Semiconductor Technical Data Document Number: MRFG35010N Rev. 6, 2/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35010NT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. This device is unmatched and is suitable for use in Class
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MRFG35010N
MRFG35010NT1
transistor std 13007
ATC 601 IPC
transistor E 13007
FET 4016
MRFG35010
A113
MRFG35010NT1
j 13007 TRANSISTOR
1309-2
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MRFG35010ANT1
Abstract: IRL 724 N A113 AN1955 arco 466 14584 atc 17-33 transistor d 4515 EQUIVALENT
Text: Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 0, 5/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35010ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB
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MRFG35010AN
MRFG35010ANT1
MRFG35010ANT1
IRL 724 N
A113
AN1955
arco 466
14584
atc 17-33
transistor d 4515 EQUIVALENT
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transistor std 13007
Abstract: 0944
Text: Freescale Semiconductor Technical Data Document Number: MRFG35010N Rev. 6, 2/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35010NT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. This device is unmatched and is suitable for use in Class
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MRFG35010N
MRFG35010NT1
MRFG35010N
transistor std 13007
0944
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IPC 6012
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MMG3003NT1 Rev. 3, 8/2005 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3003NT1 Broadband High Linearity Amplifier The MMG3003NT1 is a General Purpose Amplifier that is internally input matched and internally output prematched. It is designed for a broad
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MMG3003NT1
MMG3003NT1
IPC 6012
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154754
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MMG3003NT1 Rev. 4, 5/2006 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3003NT1 Broadband High Linearity Amplifier The MMG3003NT1 is a General Purpose Amplifier that is internally input matched and internally output prematched. It is designed for a broad
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MMG3003NT1
MMG3003NT1
154754
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100A100JP150X
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data MRFG35010MT1 Rev. 4, 7/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistors MRFG35010NT1 MRFG35010MT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Devices are unmatched and are suitable for use in Class
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MRFG35010MT1
MRFG35010NT1
MRFG35010MT1
100A100JP150X
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35010ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB
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MRFG35010AN
MRFG35010ANT1
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6 017 03 61
Abstract: A113 MRFG35010ANT1 MRFG35010NT1 Z16C20
Text: Freescale Semiconductor Technical Data Document Number: MRFG35010N Rev. 7, 1/2008 MRFG35010NT1 replaced by MRFG35010ANT1. MRFG35010NT1 Gallium Arsenide PHEMT RF Power Field Effect Transistor 3.5 GHz, 9 W, 12 V POWER FET GaAs PHEMT • Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts,
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MRFG35010N
MRFG35010NT1
MRFG35010ANT1.
MRFG35010NT1
6 017 03 61
A113
MRFG35010ANT1
Z16C20
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16l soic8
Abstract: qfn16 thermal resistance
Text: ECP053 PRELIMINARY DATA SHEET 0.5WATT POWER AMPLIFIER Features Applications 2.4GHz - 2.7GHz 28dBm P1dB High Linearity: 43dBm OIP3 High Efficiency: PAE > 45% 13 dB of Linear Gain Single 5V Supply High Reliablility Class A or AB operation Basestations and Repeaters
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ECP053
28dBm
43dBm
QFN-16
ECP053
ECP053G
ECP053G-500
ECP053G-1000
ECP053D
ECP053D-500
16l soic8
qfn16 thermal resistance
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Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRFG35010N Rev. 7, 1/2008 MRFG35010NT1 replaced by MRFG35010ANT1. MRFG35010NT1 Gallium Arsenide PHEMT RF Power Field Effect Transistor 3.5 GHz, 9 W, 12 V POWER FET GaAs PHEMT • Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts,
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MRFG35010N
MRFG35010NT1
MRFG35010ANT1.
MRFG35010NT1
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P51ETR-ND
Abstract: A113 A114 A115 AN1955 C101 JESD22 MRFG35010ANT1
Text: Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35010ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB
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MRFG35010AN
MRFG35010ANT1
P51ETR-ND
A113
A114
A115
AN1955
C101
JESD22
MRFG35010ANT1
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MMG3003NT1 Rev. 2, 5/2005 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3003NT1 Broadband High Linearity Amplifier The MMG3003NT1 is a General Purpose Amplifier that is internally input matched and internally output prematched. It is designed for a broad
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MMG3003NT1
MMG3003NT1
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irl 3710
Abstract: 840 21210 FR408 ECUV1H 07482
Text: Freescale Semiconductor Technical Data Document Number: MMG3004NT1 Rev. 1, 5/2006 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3004NT1 Broadband High Linearity Amplifier The MMG3004NT1 is a General Purpose Amplifier that is internally prematched and designed for a broad range of Class A, small- signal, high
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MMG3004NT1
MMG3004NT1
irl 3710
840 21210
FR408
ECUV1H
07482
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freescale semiconductor body marking
Abstract: ML200C marking c5 Z3 marking
Text: Freescale Semiconductor Technical Data MMG3003NT1 Rev. 1, 1/2005 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3003NT1 Broadband High Linearity Amplifier The MMG3003NT1 is a General Purpose Amplifier that is internally input matched and internally output prematched. It is designed for a broad
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MMG3003NT1
OT-89
freescale semiconductor body marking
ML200C
marking c5
Z3 marking
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uhf linear amplifier module
Abstract: GP 809 DIODE MMH3101 81348 MHW7185CL 33048 Power Amplifier MMIC 2.6 GHz 53368 Freescale Semiconductor hybrid amplifier modules MARKING T MMIC AMPLIFIER 32DB GAIN
Text: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Freescale Semiconductor Device Data. ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 CATV Distribution Amplifier Modules. DL209 Rev. 2 2/2005 ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 CATV Distribution Amplifier Modules
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DL209
uhf linear amplifier module
GP 809 DIODE
MMH3101
81348
MHW7185CL
33048
Power Amplifier MMIC 2.6 GHz
53368
Freescale Semiconductor hybrid amplifier modules
MARKING T MMIC AMPLIFIER 32DB GAIN
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300 watts amplifier schematics
Abstract: MCH185C102KK power amplifier 500 watt transistor circuit
Text: ECP103 PRELIMINARY DATA SHEET 1.0 WATT POWER AMPLIFIER Product Features Applications Basestations and Repeaters Multi-carrier systems 2.1-2.7GHz 30.5 dBm P1dB High Linearity: 46 dBm OIP3 High Efficiency: PAE > 40% 11 dB Linear Gain Single 5V Supply High Reliabilty
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ECP103
QFN-16
ECP103
ECP103G
ECP103G-500
ECP103G-1000
ECP103D
ECP103D-500
ECP103D-1000
QFN-16
300 watts amplifier schematics
MCH185C102KK
power amplifier 500 watt transistor circuit
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Abstract: No abstract text available
Text: ECP203 PRELIMINARY DATA SHEET 2.0 WATT POWER AMPLIFIER Product Features Applications 2.1 - 2.7GHz 32.5 dBm P1dB High Linearity: 48 dBm OIP3 10 dB Linear Gain Single 5V Supply High Reliabilty Class A or AB operation Basestations and Repeaters Multi-carrier systems
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ECP203
QFN-16
ECP203
ECP203G
ECP203G-500
ECP203G-1000
ECP203D
ECP203D-500
ECP203D-1000
QFN-16
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRFG35010MT1 Rev. 5, 2/2006 Replaced by MRFG35010NT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.
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MRFG35010MT1
MRFG35010NT1.
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