SI4431CDY
Abstract: No abstract text available
Text: New Product Si4431CDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.032 at VGS = - 10 V - 9.0 0.049 at VGS = - 4.5 V - 5.8 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
|
Original
|
Si4431CDY
Si4431CDY-T1-E3
Si4431CDY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
si9945b
Abstract: SI9945BDY SI9945BDY-T1-GE si9945bd
Text: New Product Si9945BDY Vishay Siliconix Dual N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.058 at VGS = 10 V 5.3 0.072 at VGS = 4.5 V 4.7 VDS (V) 60 Qg (Typ.) 13 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
|
Original
|
Si9945BDY
Si9945BDY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
si9945b
SI9945BDY-T1-GE
si9945bd
|
PDF
|
sir158
Abstract: No abstract text available
Text: New Product SiR158DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0018 at VGS = 10 V 60g 0.0023 at VGS = 4.5 V 60g VDS (V) 30 Qg (Typ.) 41.5 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21
|
Original
|
SiR158DP
SiR158DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
sir158
|
PDF
|
Si4420BDY
Abstract: Si4420BDY-T1-E3 Si4420BDY-T1-GE3
Text: Si4420BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0085 at VGS = 10 V 13.5 0.0110 at VGS = 4.5 V 11 Definition • TrenchFET Power MOSFET • 100 % Rg Tested
|
Original
|
Si4420BDY
Si4420BDY-T1-E3
Si4420BDY-T1-GE3
11-Mar-11
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Si4425DDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0098 at VGS = 10 V - 19.7 0.0165 at VGS = 4.5 V - 15.2 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
|
Original
|
Si4425DDY
Si4425DDY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
SiR158DP
Abstract: SiR158DP-T1-GE3
Text: New Product SiR158DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0018 at VGS = 10 V 60g 0.0023 at VGS = 4.5 V 60g VDS (V) 30 Qg (Typ.) 41.5 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21
|
Original
|
SiR158DP
SiR158DP-T1-GE3
18-Jul-08
|
PDF
|
Untitled
Abstract: No abstract text available
Text: New Product SiS436DN Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0105 at VGS = 10 V 16 0.013 at VGS = 4.5 V 16 VDS (V) 25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET
|
Original
|
SiS436DN
SiS436DN-T1-GE3
18-Jul-08
|
PDF
|
si5468
Abstract: 69072
Text: Si5468DC Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.028 at VGS = 10 V 6 0.034 at VGS = 4.5 V 6 VDS (V) 30 Qg (Typ.) 3.8 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
|
Original
|
Si5468DC
Si5468DC-T1-GE3
18-Jul-08
si5468
69072
|
PDF
|
si4401dy
Abstract: No abstract text available
Text: Si4401DY Vishay Siliconix P-Channel 40-V D-S MOSFET PRODUCT SUMMARY VDS (V) - 40 RDS(on) (Ω) ID (A) 0.0155 at VGS = - 10 V - 10.5 0.0225 at VGS = - 4.5 V - 8.7 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs
|
Original
|
Si4401DY
Si4401DY-T1-E3
Si4401DY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: New Product SiS436DN Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0105 at VGS = 10 V 16 0.013 at VGS = 4.5 V 16 VDS (V) 25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET
|
Original
|
SiS436DN
SiS436DN-T1-GE3
11-Mar-11
|
PDF
|
SI-4436
Abstract: No abstract text available
Text: New Product Si4436DY Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.036 at VGS = 10 V 8 0.043 at VGS = 4.5 V 8 VDS (V) 60 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Optimized for “Low Side” Synchronous
|
Original
|
Si4436DY
Si4436DY-T1-E3
Si4436DY-T1-GE3
11-Mar-11
SI-4436
|
PDF
|
Si4434DY
Abstract: Si4434DY-T1-E3 Si4434DY-T1-GE3
Text: Si4434DY Vishay Siliconix N-Channel 250-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RrDS(on) (Ω) 250 ID (A) 0.155 at VGS = 10 V 3.0 0.162 at VGS = 6.0 V 2.9 • Halogen-free According to IEC 61249-2-21 Definition • PWM-Optimized TrenchFET Power MOSFET
|
Original
|
Si4434DY
Si4434DY-T1-E3
Si4434DY-T1-GE3
18-Jul-08
|
PDF
|
Si4401DY
Abstract: Si4401DY-T1-E3
Text: Si4401DY Vishay Siliconix P-Channel 40-V D-S MOSFET PRODUCT SUMMARY VDS (V) - 40 RDS(on) (Ω) ID (A) 0.0155 at VGS = - 10 V - 10.5 0.0225 at VGS = - 4.5 V - 8.7 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs
|
Original
|
Si4401DY
Si4401DY-T1-E3
Si4401DY-T1-GE3
18-Jul-08
|
PDF
|
Si4418DY
Abstract: Si4418DY-T1-E3 Si4418DY-T1-GE3
Text: Si4418DY Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 200 ID (A) 0.130 at VGS = 10 V 3 0.142 at VGS = 6.0 V 2.8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested
|
Original
|
Si4418DY
Si4418DY-T1-E3
Si4418DY-T1-GE3
20lectual
18-Jul-08
|
PDF
|
|
|
Si4431CDY
Abstract: Si4431CDY-T1-E3
Text: New Product Si4431CDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.032 at VGS = - 10 V - 9.0 0.049 at VGS = - 4.5 V - 5.8 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
|
Original
|
Si4431CDY
Si4431CDY-T1-E3
Si4431CDY-T1-GE3
18-Jul-08
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Si4425DDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0098 at VGS = 10 V - 19.7 0.0165 at VGS = 4.5 V - 15.2 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
|
Original
|
Si4425DDY
Si4425DDY-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: New Product SiS436DN Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0105 at VGS = 10 V 16 0.013 at VGS = 4.5 V 16 VDS (V) 25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET
|
Original
|
SiS436DN
SiS436DN-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Si4409DY Vishay Siliconix P-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 150 RDS(on) (Ω) ID (A)a 1.2 at VGS = - 10 V - 1.3 1.3 at VGS = - 6 V - 1.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % UIS Tested
|
Original
|
Si4409DY
Si4409DY-T1-E3
Si4409DY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
1N1184
Abstract: 1N1183 1N1183A 1N1185 1N1186 1N2128A 1N3765 DO-203AB
Text: 1N1183, 1N3765, 1N1183A, 1N2128A Series Vishay High Power Products Power Silicon Rectifier Diodes, 35 A/40 A/60 A DESCRIPTION/FEATURES • Low leakage current series • Good surge current capability up to 1000 A • Can be supplied to meet stringent military, aerospace and
|
Original
|
1N1183,
1N3765,
1N1183A,
1N2128A
DO-203AB
1N1183
1N2128A
18-Jul-08
1N1184
1N1183
1N1183A
1N1185
1N1186
1N3765
DO-203AB
|
PDF
|
Untitled
Abstract: No abstract text available
Text: New Product SiR158DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0018 at VGS = 10 V 60g 0.0023 at VGS = 4.5 V 60g VDS (V) 30 Qg (Typ.) 41.5 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21
|
Original
|
SiR158DP
SiR158DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: New Product Si4446DY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.040 at VGS = 10 V 5.2 0.045 at VGS = 4.5 V 4.9 VDS (V) 40 Qg (Typ.) 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
|
Original
|
Si4446DY
Si4446DY-T1-E3
Si4446DY-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: New Product SiR414DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0028 at VGS = 10 V 50 0.0032 at VGS = 4.5 V 50 VDS (V) 40 Qg (Typ.) 38 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
|
Original
|
SiR414DP
SiR414DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Si4420BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0085 at VGS = 10 V 13.5 0.0110 at VGS = 4.5 V 11 Definition • TrenchFET Power MOSFET • 100 % Rg Tested
|
Original
|
Si4420BDY
Si4420BDY-T1-E3
Si4420BDY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
SJS840300
Abstract: SJS840310
Text: SJS840300 I REV ECN A 0 .5 7 3 APP'D 6 4 2 8 j,^ - 7 ^ /z ^ y HITE MARKING 0.040" HIGH CHARACTER >24 .550 0.451 .024 APCD YYWWSJS840300 SJS840300 SJS840300 I .077 3LACK MARKING DATE CODE BLACK DOT- .663 BLACK MARKING TWO SIDES NOTES: 1. MATERIALS: HOUSING: PA6/6
|
OCR Scan
|
SJS840300
YYWWSJS840300
SJS840310
02-MarKING
02-Mar-09
SJS840300
|
PDF
|