Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SIR414DP Search Results

    SF Impression Pixel

    SIR414DP Price and Stock

    Vishay Siliconix SIR414DP-T1-GE3

    MOSFET N-CH 40V 50A PPAK SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIR414DP-T1-GE3 Digi-Reel 5,034 1
    • 1 $2.35
    • 10 $1.51
    • 100 $2.35
    • 1000 $0.75706
    • 10000 $0.75706
    		Buy Now
    SIR414DP-T1-GE3 Cut Tape 5,034 1
    • 1 $2.35
    • 10 $1.51
    • 100 $2.35
    • 1000 $0.75706
    • 10000 $0.75706
    		Buy Now
    SIR414DP-T1-GE3 Reel 3,000 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.65625
    		Buy Now

    Vishay Intertechnologies SIR414DP-T1-GE3

    N-CHANNEL 40-V (D-S) MOSFET - Tape and Reel (Alt: SIR414DP-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIR414DP-T1-GE3 Reel 16 Weeks 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.69713
    		Buy Now
    Mouser Electronics SIR414DP-T1-GE3 15,782
    • 1 $1.87
    • 10 $1.27
    • 100 $0.972
    • 1000 $0.715
    • 10000 $0.656
    		Buy Now
    Verical SIR414DP-T1-GE3 3,000 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $1.0598
    		Buy Now
    SIR414DP-T1-GE3 3,000 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.672
    		Buy Now
    Arrow Electronics SIR414DP-T1-GE3 3,000 16 Weeks 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.6655
    		Buy Now
    Newark SIR414DP-T1-GE3 Bulk 8,791 1
    • 1 $1.57
    • 10 $1.3
    • 100 $0.921
    • 1000 $0.753
    • 10000 $0.753
    		Buy Now
    Avnet Asia SIR414DP-T1-GE3 18 Weeks 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    EBV Elektronik SIR414DP-T1-GE3 17 Weeks 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    New Advantage Corporation SIR414DP-T1-GE3 250 1
    • 1 -
    • 10 -
    • 100 $1.05
    • 1000 $1.05
    • 10000 $1.05
    		Buy Now

    Vishay Huntington SIR414DP-T1-GE3

    MOSFET N-CH 40V 50A PPAK SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics SIR414DP-T1-GE3 11,523
    • 1 -
    • 10 -
    • 100 $1.2511
    • 1000 $1.0354
    • 10000 $1.0354
    		Buy Now

    SIR414DP Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIR414DP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 50A 8-SOIC Original PDF

    SIR414DP Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    125-88-9

    Abstract: 80464 U 1560 AN609 SiR414DP
    Text: SiR414DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original     		SiR414DP AN609, 06-Feb-09 125-88-9 80464 U 1560 AN609 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiR414DP www.vishay.com Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		SiR414DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR414DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0028 at VGS = 10 V 50 0.0032 at VGS = 4.5 V 50 VDS (V) 40 Qg (Typ.) 38 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		SiR414DP SiR414DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR414DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0028 at VGS = 10 V 50 0.0032 at VGS = 4.5 V 50 VDS (V) 40 Qg (Typ.) 38 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		SiR414DP SiR414DP-T1-GE3 11-Mar-11 PDF

    SiR414DP

    Abstract: No abstract text available
    Text: New Product SiR414DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0028 at VGS = 10 V 50 0.0032 at VGS = 4.5 V 50 VDS (V) 40 Qg (Typ.) 38 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		SiR414DP SiR414DP-T1-GE3 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR414DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0028 at VGS = 10 V 50 0.0032 at VGS = 4.5 V 50 VDS (V) 40 Qg (Typ.) 38 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		SiR414DP SiR414DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR414DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0028 at VGS = 10 V 50 0.0032 at VGS = 4.5 V 50 VDS (V) 40 Qg (Typ.) 38 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		SiR414DP SiR414DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    SiR414DP

    Abstract: No abstract text available
    Text: New Product SiR414DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0028 at VGS = 10 V 50 0.0032 at VGS = 4.5 V 50 VDS (V) 40 Qg (Typ.) 38 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		SiR414DP SiR414DP-T1-GE3 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR414DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0028 at VGS = 10 V 50 0.0032 at VGS = 4.5 V 50 VDS (V) 40 Qg (Typ.) 38 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		SiR414DP SiR414DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    f 0452 N-Channel MOSFET

    Abstract: SiR414DP 64780 6-4780
    Text: SPICE Device Model SiR414DP Vishay Siliconix N-Channel 40-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		SiR414DP 18-Jul-08 f 0452 N-Channel MOSFET 64780 6-4780 PDF

    PA0806.004NL

    Abstract: 18V75V BSC057N08NS3 PA2008 LTC3766GN
    Text: LTC3766 High Efficiency, Secondary-Side Synchronous Forward Controller Description Features Direct Flux Limit Guarantees No Saturation Fast and Accurate Average Current Limit n Clean Start-Up Into Pre-Biased Output n Secondary-Side Control for Fast Transient Response


    Original     		LTC3766 LTC3765 LTC3765, 3766fa com/LTC3766 PA0806.004NL 18V75V BSC057N08NS3 PA2008 LTC3766GN PDF

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2 PDF

    Untitled

    Abstract: No abstract text available
    Text: LTC3766 High Efficiency, Secondary-Side Synchronous Forward Controller DESCRIPTION FEATURES n n n n n n n n n n n n n Direct Flux Limit Guarantees No Saturation Fast and Accurate Average Current Limit Clean Start-Up Into Pre-Biased Output Secondary-Side Control for Fast Transient Response


    Original     		LTC3766 28-Lead 3766f PDF

    Untitled

    Abstract: No abstract text available
    Text: LTC3765 Active Clamp Forward Controller and Gate Driver FEATURES n n n n n n n n n n n n DESCRIPTION Supports Self-Starting Secondary-Side Control Direct Flux Limit Guarantees No Saturation Active Clamp Drive with Delay Adjustment On-Chip Bridge Rectifier Eliminates Need for


    Original     		LTC3765 16-Lead LT1952/LT1952-1 LTC3723-1/LTC3723-2 LTC3721-1/LTC3721-2 LTC3722/LTC2722-2 3765fa PDF

    Untitled

    Abstract: No abstract text available
    Text: LTC3765 Active Clamp Forward Controller and Gate Driver FEATURES n n n n n n n n n n n n DESCRIPTION Supports Self-Starting Secondary-Side Control Direct Flux Limit Guarantees No Saturation Active Clamp Drive with Delay Adjustment On-Chip Bridge Rectifier Eliminates Need for


    Original     		LTC3765 16-Lead LTC3723-1/LTC3723-2 LTC3721-1 LTC3722/LTC2722-2 3765fb com/LTC3765 PDF

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


    Original     		Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477 PDF

    SI3437DV

    Abstract: snubber application note SI3437
    Text: LTC3765 Active Clamp Forward Controller and Gate Driver FEATURES n n n n n n n n n n n n DESCRIPTION Supports Self-Starting Secondary-Side Control Direct Flux Limit Guarantees No Saturation Active Clamp Drive with Delay Adjustment On-Chip Bridge Rectifier Eliminates Need for


    Original     		LTC3765 LTC3766 3765fa LTC3723-1/LTC3723-2 LTC3721-1/LTC3721-2 LTC3722/LTC2722-2 SI3437DV snubber application note SI3437 PDF

    SI3437

    Abstract: pa2008 LTC3765 48v battery charger lead LTC3766GN 35HVH100M DA2320 Schottky barrier diode 60v 1 amp 004NL 18V75V
    Text: LTC3766 High Efficiency, Secondary-Side Synchronous Forward Controller DESCRIPTION FEATURES Direct Flux Limit Guarantees No Saturation Fast and Accurate Average Current Limit n Clean Start-Up Into Pre-Biased Output n Secondary-Side Control for Fast Transient Response


    Original     		LTC3766 28-Lead 3766f SI3437 pa2008 LTC3765 48v battery charger lead LTC3766GN 35HVH100M DA2320 Schottky barrier diode 60v 1 amp 004NL 18V75V PDF

    LTC3765

    Abstract: LTC3765EMSE LTC3765MPMSE marking dag BSC0901NS FDMS86201 LTC3766 PA0810 SI3437 48v battery charger schematic diagram
    Text: LTC3765 Active Clamp Forward Controller and Gate Driver FEATURES n n n n n n n n n n n n DESCRIPTION Supports Self-Starting Secondary-Side Control Direct Flux Limit Guarantees No Saturation Active Clamp Drive with Delay Adjustment On-Chip Bridge Rectifier Eliminates Need for


    Original     		LTC3765 16-Lead LT1952/LT1952-1 LTC3723-1/LTC3723-2 LTC3721-1/LTC3721-2 LTC3722/LTC2722-2 3765f LTC3765 LTC3765EMSE LTC3765MPMSE marking dag BSC0901NS FDMS86201 LTC3766 PA0810 SI3437 48v battery charger schematic diagram PDF