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    Vishay Siliconix SI5468DC-T1-GE3

    MOSFET N-CH 30V 6A 1206-8
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    DigiKey SI5468DC-T1-GE3 Reel 6,000 3,000
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    SI5468DC-T1-GE3 Cut Tape 4,187 1
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    SI5468DC-T1-GE3 Digi-Reel 1
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    RS SI5468DC-T1-GE3 Bulk 20
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    Vishay Intertechnologies SI5468DC-T1-GE3

    Trans MOSFET N-CH 30V 6A 8-Pin Chip FET T/R - Tape and Reel (Alt: SI5468DC-T1-GE3)
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    Avnet Americas SI5468DC-T1-GE3 Reel 19 Weeks 3,000
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    Mouser Electronics SI5468DC-T1-GE3 67,121
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    Newark SI5468DC-T1-GE3 Cut Tape 5,618 1
    • 1 $0.503
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    SI5468DC-T1-GE3 Reel 3,000
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    Bristol Electronics SI5468DC-T1-GE3 2,832
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    Quest Components SI5468DC-T1-GE3 2,265
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    SI5468DC-T1-GE3 208
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    TTI SI5468DC-T1-GE3 Reel 9,000 3,000
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    Avnet Asia SI5468DC-T1-GE3 20 Weeks 3,000
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    EBV Elektronik SI5468DC-T1-GE3 19 Weeks 3,000
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    Vishay BLH SI5468DC-T1-GE3

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    Bristol Electronics SI5468DC-T1-GE3 260 9
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    Vishay Intertechnologies SI5468DCT1GE3

    N-CHANNEL 30 V (D-S) MOSFET Small Signal Field-Effect Transistor, 6A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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    ComSIT USA SI5468DCT1GE3 3,000
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    SI5468DC Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SI5468DC-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 6A 1206-8 Original PDF

    SI5468DC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    si5468

    Abstract: 69072
    Text: Si5468DC Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.028 at VGS = 10 V 6 0.034 at VGS = 4.5 V 6 VDS (V) 30 Qg (Typ.) 3.8 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si5468DC Si5468DC-T1-GE3 18-Jul-08 si5468 69072

    S12-2446

    Abstract: No abstract text available
    Text: SPICE Device Model Si5468DC www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si5468DC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 S12-2446

    Untitled

    Abstract: No abstract text available
    Text: Si5468DC Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.028 at VGS = 10 V 6 0.034 at VGS = 4.5 V 6 VDS (V) 30 Qg (Typ.) 3.8 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si5468DC Si5468DC-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si5468DC Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.028 at VGS = 10 V 6 0.034 at VGS = 4.5 V 6 VDS (V) 30 Qg (Typ.) 3.8 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si5468DC Si5468DC-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si5468DC Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.028 at VGS = 10 V 6 0.034 at VGS = 4.5 V 6 VDS (V) 30 Qg (Typ.) 3.8 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si5468DC Si5468DC-T1-GE3 11-Mar-11

    64785

    Abstract: No abstract text available
    Text: SPICE Device Model Si5468DC Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		PDF Si5468DC 18-Jul-08 64785

    9018

    Abstract: 2672 DATA SHEET 7496 data sheet 7496 datasheet AN609
    Text: Si5468DC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original     		PDF Si5468DC AN609, 06-Feb-09 9018 2672 DATA SHEET 7496 data sheet 7496 datasheet AN609

    78AF

    Abstract: No abstract text available
    Text: Si5468DC Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.028 at VGS = 10 V 6 0.034 at VGS = 4.5 V 6 VDS (V) 30 Qg (Typ.) 3.8 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si5468DC Si5468DC-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 78AF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


    Original     		PDF Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477