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    DSASW00397986.pdf by Toshiba

    • 2011 1 FET MOSFET FET MOSFET IGBT () 1 2011/1 SCJ0004R () TO-92 (SC-43) VCEO (V) Max IC (A) Max hFE VCE(sat) (V) Max 12.7 MIN 4.7 MAX
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