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    2SC5563 Search Results

    2SC5563 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC5563 Unknown NPN Transistor Scan PDF
    2SC5563 Toshiba Silicon NPN triple diffused type transistor for dinamic focus applications Scan PDF
    2SC5563 Toshiba TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE Scan PDF

    2SC5563 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC5563

    Abstract: No abstract text available
    Text: 2SC5563 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5563 Dynamic Focus Applications Unit: mm • High voltage: VCEO = 1500 V • Small collector output capacitance: Cob = 2.0 pF typ. (VCB = 100 V) Absolute Maximum Ratings (Tc = 25°C) Characteristics


    Original     		PDF 2SC5563 SC-67 2-10R1A 2SC5563

    TA12100

    Abstract: MA1060 c5563 2SC5563
    Text: 2SC5563 東芝トランジスタ シリコンNPN三重拡散形 2SC5563 ○ ダイナミックフォーカス用 単位: mm • 高耐圧です。 • コレクタ出力容量が低い。 : Cob = 2.1 pF 標準 (VCB = 100 V) : VCEO = 1500 V 絶対最大定格 (Ta = 25°C)


    Original     		PDF 2SC5563 SC-67 2-10R1A TA12100 MA1060 c5563 2SC5563

    TA12100

    Abstract: c5563 2SC5563
    Text: 2SC5563 東芝トランジスタ シリコンNPN三重拡散形 2SC5563 ○ ダイナミックフォーカス用 単位: mm • 高耐圧です。 • コレクタ出力容量が低い。 : Cob = 2.1 pF 標準 (VCB = 100 V) : VCEO = 1500 V 絶対最大定格 (Ta = 25°C)


    Original     		PDF 2SC5563 SC-67 2-10R1A 20070701-JA TA12100 c5563 2SC5563

    2SC5563

    Abstract: DSA0042876
    Text: 2SC5563 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5563 Dynamic Focus Applications Unit: mm • High voltage: VCEO = 1500 V • Small collector output capacitance: Cob = 2.0 pF typ. (VCB = 100 V) Maximum Ratings (Tc = 25°C) Characteristics Symbol


    Original     		PDF 2SC5563 SC-67 2SC5563 DSA0042876

    2SC5563

    Abstract: No abstract text available
    Text: 2SC5563 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5563 Dynamic Focus Applications Unit: mm • High voltage: VCEO = 1500 V • Small collector output capacitance: Cob = 2.1 pF typ. (VCB = 100 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics


    Original     		PDF 2SC5563 2SC5563

    2SC5563

    Abstract: No abstract text available
    Text: 2SC5563 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5563 Dynamic Focus Applications Unit: mm • High voltage: VCEO = 1500 V • Small collector output capacitance: Cob = 2.0 pF typ. (VCB = 100 V) Absolute Maximum Ratings (Tc = 25°C) Characteristics


    Original     		PDF 2SC5563 2SC5563

    Untitled

    Abstract: No abstract text available
    Text: 2SC5563 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5563 Dynamic Focus Applications Unit: mm • High voltage: VCEO = 1500 V • Small collector output capacitance: Cob = 2.0 pF typ. (VCB = 100 V) Maximum Ratings (Tc = 25°C) Characteristics Symbol


    Original     		PDF 2SC5563

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    2sC5200, 2SA1943

    Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
    Text: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current


    Original     		PDF BCE0016D 2sC5200, 2SA1943 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent

    smd transistor h2a

    Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
    Text: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output


    Original     		PDF BCE0016C E-28831 BCE0016D smd transistor h2a SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF 2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122

    2SA1941 amp circuit

    Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
    Text: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including


    Original     		PDF BCE0016F 2SA1941 amp circuit 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943

    2SA1930 2sc5171

    Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
    Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228


    Original     		PDF SC-63/64) SC-62) SC-59 OT-23 2SA1483 2SC3803 2SA1426 2SA1204 2SA1734 2SA2065 2SA1930 2sc5171 tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn

    2SC2625

    Abstract: power transistor 2sc2625 datasheet 2SC5000 2SA793 2sc2335 2sc2625 equivalent 2SC1116A 2SC2306 2SC2829 2sb600
    Text: STI Type: 2C5000 Industry Type: 2C5000 V CEO: ICBO ICEX: h FE: IC: V CE: Case Style: STI Type: 2N2453DIE Industry Type: 2C2453 V CEO: 30 ICBO ICEX: h FE: 150 IC: 1.0m V CE: Case Style: STI Type: 2N3807DIE Industry Type: 2C3807 V CEO: 60 ICBO ICEX: h FE: 300


    Original     		PDF 2C5000 2N2453DIE 2C2453 2N3807DIE 2C3807 2N6287DIE 2C6287 2N6295DIE 2C6295 2SC2625 power transistor 2sc2625 datasheet 2SC5000 2SA793 2sc2335 2sc2625 equivalent 2SC1116A 2SC2306 2SC2829 2sb600

    TB1253N

    Abstract: TB1240 TA8792N TA8792 tb1238 f062dsl TC90A65F TB1238BN F1814B LB 122s
    Text: 2000-2 エネルギーとエレクトロニクス 東芝半導体システムカタログ TV編 Y1A1AH TVの機能別基本ブロック図 音声処理部 周波数シンセサイザ部 音声多重復調 SIF UHF/VHF チューナ サラウンド 機能 SAW


    Original     		PDF TLP181 AC5000 AC4000 TLP521/TLP621/TLP721Toshiba VDE0884 TLP721 TLP621 TLGU1002 TLOU1002 TB1253N TB1240 TA8792N TA8792 tb1238 f062dsl TC90A65F TB1238BN F1814B LB 122s

    GT45F122

    Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124
    Text: 東芝半導体製品総覧表 2009 年 7 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 GT45F122 TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124

    GT30J124

    Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004I SC-43) 2SC1815 GT30J124 smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram

    2SC5563

    Abstract: No abstract text available
    Text: TO SH IBA TENTATIVE 2SC5563 TOSHIBA TRANSISTOR DYNAMIC FOCUS APPLICATIONS • • SILICON NPN TRIPLE DIFFUSED TYPE 2SC5563 High Voltage : V^ e q - 1500 V Small Collector Output Capacitance : C0b = 2.0 pF Typ. iV n n = 1 00 V'l MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC5563 2SC5563

    2SC5563

    Abstract: No abstract text available
    Text: TO SH IBA TENTATIVE 2SC5563 TOSHIBA TRANSISTOR DYNAMIC FOCUS APPLICATIONS • • SILICON NPN TRIPLE DIFFUSED TYPE 2SC5563 Unit in mm r 10 ±0.3 High Voltage : V^ e q - 1500 V Small Collector Output Capacitance : C0b = 2.0 pF Typ. ^3.2 ± 0.2 2.7±Q 2 m


    OCR Scan     		PDF 2SC5563 2SC5563

    2SC5563

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE 2SC5563 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5563 Unit in mm DYNAM IC FOCUS APPLICATIONS • • High Voltage : V q ^o = 1500 V Small Collector Output Capacitance : C0b = 2.0 pF Typ. (VCB = 100 V) r 10 ± 0 .3 ^ 3 .2 ± 0.2


    OCR Scan     		PDF 2SC5563

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A TENTATIVE 2SC5563 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC 5563 Unit in mm DYNAMIC FOCUS APPLICATIONS • • High Voltage Small Collector Output Capacitance 3.2 ± 0 .2 1 Q ± 0 .3 V ç e o = 1500 V Cob = 2.0 pF Typ. (VCB = 100 V)


    OCR Scan     		PDF 2SC5563

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A TENTATIVE 2SC5563 TOSHIBA TRANSISTOR DYNAMIC FOCUS APPLICATIONS • • SILICON NPN TRIPLE DIFFUSED TYPE 2 SC 5 563 High Voltage Small Collector Output Capacitance V ç e O = 1500 V Cob = 2.0 pF Typ. (VCB = 100 V) MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC5563