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    Toshiba America Electronic Components TTC0002(Q)

    TRANS NPN 160V 18A TO3P
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TTC0002(Q) Bulk 185 1
    • 1 $3.18
    • 10 $2.667
    • 100 $2.1574
    • 1000 $1.642
    • 10000 $1.52875
    		Buy Now
    Avnet Americas TTC0002(Q) Tray 15 Weeks 100
    • 1 -
    • 10 -
    • 100 $1.87119
    • 1000 $1.60213
    • 10000 $1.56544
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    Mouser Electronics TTC0002(Q) 499
    • 1 $3.18
    • 10 $2.67
    • 100 $2.15
    • 1000 $1.54
    • 10000 $1.52
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    TME TTC0002(Q) 412 1
    • 1 $3
    • 10 $2.78
    • 100 $2.15
    • 1000 $2.15
    • 10000 $2.15
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    Chip1Stop TTC0002(Q) Bulk 1
    • 1 $2.86
    • 10 $2.86
    • 100 $2.86
    • 1000 $2.86
    • 10000 $2.86
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    TTC0002 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    TTC0002 Toshiba TTC0002 - TRANSISTOR 18 A, 160 V, NPN, Si, POWER TRANSISTOR, ROHS COMPLIANT, 2-21F1A, 3 PIN, BIP General Purpose Power Original PDF
    TTC0002(Q) Toshiba TTC0002 - Trans GP BJT NPN 160V 18A 3-Pin(3+Tab) TO-3PL Original PDF

    TTC0002 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TTC0002

    Abstract: TTA0002 2-21F1A
    Text: TTC0002 東芝トランジスタ シリコンNPN三重拡散形 TTC0002 ○ 電力増幅用 単位: mm • 高耐圧です。: VCEO = 160 V 最小 • TTA0002 とコンプリメンタリになります。 • 100 W ハイファイオーディオアンプ出力段に最適です。


    Original     		PDF TTC0002 TTA0002 2-21F1A TTC0002 TTA0002 2-21F1A

    TTC0002

    Abstract: TTA0002 100-W 2-21F1A
    Text: TTC0002 TOSHIBA Transistor Silicon NPN Triple Diffused Type TTC0002 ○ Power Amplifier Applications Unit: mm • High collector voltage: VCEO = 160 V min • Complementary to TTA0002 • Recommended for 100-W high-fidelity audio frequency amplifier output


    Original     		PDF TTC0002 TTA0002 TTC0002 TTA0002 100-W 2-21F1A

    TTA0002

    Abstract: TTC0002 100-W 2-21F1A
    Text: TTA0002 TOSHIBA Transistor Silicon PNP Triple Diffused Type TTA0002 ○ Power Amplifier Applications Unit: mm • High collector voltage: VCEO = －160 V min • Complementary to TTC0002 • Recommended for 100-W high-fidelity audio frequency amplifier output


    Original     		PDF TTA0002 TTC0002 TTA0002 TTC0002 100-W 2-21F1A

    Untitled

    Abstract: No abstract text available
    Text: TTA0002 TOSHIBA Transistor Silicon PNP Triple Diffused Type TTA0002 ○ Power Amplifier Applications Unit: mm • High collector voltage: VCEO = －160 V min • Complementary to TTC0002 • Recommended for 100-W high-fidelity audio frequency amplifier output


    Original     		PDF TTA0002 TTC0002

    Untitled

    Abstract: No abstract text available
    Text: TTC0002 TOSHIBA Transistor Silicon NPN Triple Diffused Type TTC0002 ○ Power Amplifier Applications Unit: mm • High collector voltage: VCEO = 160 V min • Complementary to TTA0002 • Recommended for 100-W high-fidelity audio frequency amplifier output


    Original     		PDF TTC0002 TTA0002

    TTC0002

    Abstract: 2-21F1A TTA0002
    Text: TTA0002 東芝トランジスタ シリコンPNP三重拡散形 TTA0002 ○ 電力増幅用 単位: mm • 高耐圧です。: VCEO = －160 V 最小 • TTC0002 とコンプリメンタリになります。 • 100 W ハイファイオーディオアンプ出力段に最適です。


    Original     		PDF TTA0002 TTC0002 2-21F1A TTC0002 2-21F1A TTA0002

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    2sC5200, 2SA1943

    Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
    Text: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current


    Original     		PDF BCE0016D 2sC5200, 2SA1943 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF 2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123

    2SA1941 amp circuit

    Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
    Text: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including


    Original     		PDF BCE0016F 2SA1941 amp circuit 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943

    TIS84

    Abstract: TIPL763A tk8a60da 2N6571 TIS134 TK10A60D ttc5200 TK4A60DB TIS92 tipl763
    Text: STI Type: TIP539 Notes: Polarity: NPN Power Dissipation: 125 VCEV: 400 VCEO: 300 ICEV: 400 ICEV A: 1.0 hFE: 20 hFE A: 7.5 VCE: 2.5 VBE: 2.0 IC: 15 COB: fT: 10 Case Style: TO-204AA/TO-3: Industry Type: TIP539 STI Type: TIP540 Notes: Polarity: NPN Power Dissipation: 125


    Original     		PDF TIP539 O-204AA/TO-3: TIP540 TIP54 O-218 TIP544 TIS84 TIPL763A tk8a60da 2N6571 TIS134 TK10A60D ttc5200 TK4A60DB TIS92 tipl763

    2sC5200, 2SA1943

    Abstract: TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N
    Text: 製品カタログ 2010-4 東芝半導体 製品カタログ パワートランジスタ h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 東芝パワートランジスタについて 機能別・用途別選択早見表 • · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · 4


    Original     		PDF TTC003 SC-64) BCJ0016F BCJ0016E 2sC5200, 2SA1943 TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N

    GT45F122

    Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124
    Text: 東芝半導体製品総覧表 2009 年 7 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 GT45F122 TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124

    SMD TRANSISTOR H2A NPN

    Abstract: amplifier circuit using 2sa1943 and 2sc5200 MARKING SMD PNP TRANSISTOR Wf A06 smd transistor TTA1943 MARKING SMD PNP TRANSISTOR h2a 2sC5200, 2SA1943, 2sc5198 2SA1941 amp circuit 2SC3303 TTA006B
    Text: Semiconductor Catalog Mar. 2014 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS h t t p : // w w w. s e m i c o n . t o s h i b a . c o. j p / e n g Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including


    Original     		PDF

    *45F122

    Abstract: GT30f124 *30g122 *30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA*8023 GT50N322
    Text: 東芝半導体製品総覧表 2010 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 *45F122 GT30f124 *30g122 *30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA*8023 GT50N322