Marking XA XB XC XD XE XF XH XI XJ XK XM

Abstract: marking YJ transistors YK NPN RN2608 - RN2908 QF npn Marking 47 marking YB YB MARKING ic marking YK kn marking
Contextual Info: 3. List of Principal Characteristics of Built-In Resistor Transistors BRT SSM 3. List of Principal Characteristics of Built-In Resistor Transistors (BRT) * 3.1 Sm ail Super M ini Typ e (SSM) Polarity Type No. RN1101 RN1102 RN1103 RN1104 RN1105 RN1106 RN1107

RN1107ACT

Abstract: RN1108ACT RN2107ACT
Contextual Info: RN1107ACT~RN1109ACT 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN1107ACT,RN1108ACT,RN1109ACT ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用

Contextual Info: RN1107F~RN1109F T O SH IB A TOSHIBA TRANSISTOR R N 11Î17F • m■ v ■ ■ m m g SILICON NPN EPITAXIAL TYPE PCT PROCESS RM 11ÌÌRF ■ m■ « ■ ■ m g R M U f iQ F ■« ■v ■ ■ ■ SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS.

C 2109 RM TO-3

Contextual Info: T O SH IB A RN1107~RN1109 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1107, RN1108, RN1109 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT 1.6 ± 0.2 AND DRIVER CIRCUIT APPLICATIONS. 0.810.1 HO ÖÖ -E • With Built-in Bias Resistors

RN1107

Abstract: RN1108 RN1109 RN2107
Contextual Info: RN1107~1109 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1107, RN1108, RN1109 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z With built-in bias resistors. z Simplified circuit design z Reduced number of parts and simplified manufacturing process

RN1107ACT

Abstract: RN1108ACT RN2107ACT
Contextual Info: RN1107ACT ~ RN1109ACT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1107ACT, RN1108ACT, RN1109ACT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm TOP View 0.6±0.05

RN1107FT

Abstract: RN1108FT RN1109FT RN2107FT
Contextual Info: RN1107FT~RN1109FT 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN1107FT,RN1108FT,RN1109FT ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用

RN1107FT

Abstract: RN1108FT RN1109FT RN2107FT RN2109FT
Contextual Info: RN1107FT~RN1109FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1107FT, RN1108FT, RN1109FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • High-density mount is possible because of devices housed in very thin

Contextual Info: RN2107MFV~RN2109MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2107MFV,RN2108MFV,RN2109MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.22±0.05 Unit: mm 0.8±0.05 0.4 Complementary to the RN1107MFV~RN1109MFV

Contextual Info: RN1107CT ~ RN1109CT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1107CT,RN1108CT,RN1109CT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Unit: mm

Contextual Info: RN1107FS~RN1109FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1107FS,RN1108FS,RN1109FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications R2 B R1 Type No. R1 (kΩ) R2 (kΩ) RN1107FS

Contextual Info: RN1107FT~RN1109FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1107FT, RN1108FT, RN1109FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm • High-density mount is possible because of devices housed in very thin

RN1107FT

Abstract: RN1108FT RN1109FT RN2107FT RN2109FT
Contextual Info: RN1107FT~RN1109FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1107FT, RN1108FT, RN1109FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • High-density mount is possible because of devices housed in very thin

RN1107

Abstract: RN1108 RN1109 RN2107
Contextual Info: RN1107~1109 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1107,RN1108,RN1109 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l With built-in bias resistors. l Simplify circuit design l Reduce a quantity of parts and manufacturing process

RN1108FS

Abstract: RN1107FS RN1109FS RN2107FS RN2109FS
Contextual Info: RN1107FS~RN1109FS 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN1107FS,RN1108FS,RN1109FS ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用

RN1107

Abstract: RN1108 RN1109 RN2107
Contextual Info: RN1107~1109 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1107, RN1108, RN1109 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z With built-in bias resistors. z Simplified circuit design z Reduced number of parts and simplified manufacturing process

RN1107MFV

Abstract: pin diagram for IC 7476 RN1108MFV RN1109MFV RN2107MFV RN2109MFV CIRCUITS-11
Contextual Info: RN1107MFV~RN1109MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1107MFV,RN1108MFV,RN1109MFV Unit: mm 1.2 ± 0.05 0.22 ± 0.05 0.4 0.8 ± 0.05 A wide range of resistor values is available for use in various circuits. 1 1 0.4 Incorporating a bias resistor into the transistor reduces the number of

K1022

Contextual Info: RN1107~1109 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1107, RN1108, RN1109 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications With built-in bias resistors. Simplified circuit design Reduced number of parts and simplified manufacturing process

RN1107F

Abstract: RN1107FT RN1108F RN1108FT RN1109F RN1109FT RN2107FT
Contextual Info: RN1107FT~RN1109FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1107FT, RN1108FT, RN1109FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm • High-density mount is possible because of devices housed in very thin

Contextual Info: RN2107FV~RN2109FV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2107FV,RN2108FV,RN2109FV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.22±0.05 Unit in mm 0.4 Complementary to RN1107FV~RN1109FV 0.8±0.05

RN1107

Abstract: RN1108 RN1109 RN2107 1109 1109 pc
Contextual Info: RN1107~1109 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1107,RN1108,RN1109 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications With built-in bias resistors. Simplify circuit design Reduce a quantity of parts and manufacturing process

Contextual Info: TOSHIBA RN1107F~RN1109F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1107F, RN1108F, RN1109F SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT U nit in mm AND DRIVER CIRCUIT APPLICATIONS. 1.6 ± 0.1 0.85 ± 0 .1 • W ith Built-in Bias Resistors

r2137

Contextual Info: SILICON NPN EPITAXIAL TYPE RN1107-RN1109 U nit in mm S W IT C H IN G , IN V E R T E R C IRC U IT, IN T E R F A C E C IR C U IT A N D D R IV E R C IR C U IT A P P L IC A T IO N S . • • • • W ith Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and M anufacturing Process

ic 311 pdf datasheets

Abstract: RN1107F RN1108F RN1109F RN2107F
Contextual Info: RN1107F~RN1109F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1107F,RN1108F,RN1109F Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l With built-in bias resistors. l Simplify circuit design l Reduce a quantity of parts and manufacturing process