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    ZT84 Search Results

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    ZT84 Price and Stock

    Diodes Incorporated FZT849TA

    TRANS NPN 30V 7A SOT223-3
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    DigiKey FZT849TA Digi-Reel 1,113 1
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    Mouser Electronics FZT849TA 27,266
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    Bristol Electronics FZT849TA 498 6
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    Diodes Incorporated FZT849TC

    TRANS NPN 30V 7A SOT223-3
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    DigiKey FZT849TC Reel 4,000
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    Diodes Incorporated FZT849

    High Gain Transistor, Npn, 30V; Transistor Polarity:Npn; Collector Emitter Voltage Max:30V; Continuous Collector Current:7A; Power Dissipation:3W; Transistor Mounting:Surface Mount; No. Of Pins:4Pins; Transition Frequency:100Mhz Rohs Compliant: Yes |Diodes Inc. FZT849
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    Newark FZT849 Cut Tape 5,335 1
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    FZT849 Reel 1,000
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    ABB Low Voltage Products and Systems OETLZT84A

    CAM PLATE FOR INTLK OETL-ZT80 | ABB OETLZT84A
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    RS OETLZT84A Bulk 2 1
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    Zetex / Diodes Inc FZT849TA

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    ComSIT USA FZT849TA 690
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    ZT84 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ZT84 Semelab Bipolar NPN Device in a Hermetically Sealed TO18 Metal Package Original PDF
    ZT84 Ferranti Semiconductors Shortform Data Book 1971 Short Form PDF
    ZT84 Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
    ZT84 Ferranti Semiconductors Metal Can Transistors (Short Form) Scan PDF
    ZT84 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    ZT84 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    ZT84 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    ZT84 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    ZT84 Unknown Shortform Electronic Component Datasheets Short Form PDF
    ZT84 ZaeriX Short Form Data Catalogue 1972-73 Short Form PDF
    ZT84 Zetex Semiconductors Quick Reference Guide (Discrete Semiconductors) 1991 Scan PDF

    ZT84 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: ZT84 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 45V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.5A All Semelab hermetically sealed products


    Original
    PDF O206AA) 16-Jul-02

    TO206AA

    Abstract: No abstract text available
    Text: ZT84 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 45V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.5A All Semelab hermetically sealed products


    Original
    PDF O206AA) 19-Jun-02 TO206AA

    ZT84

    Abstract: No abstract text available
    Text: ZT84 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 45V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.5A All Semelab hermetically sealed products


    Original
    PDF O206AA) 2-Aug-02 ZT84

    2N2222A zetex

    Abstract: No abstract text available
    Text: ZETEX S E M I C O N D U C T O R S IbE D • TTVDSTfl OOObfl4ö ñ ■ ZETB METAL CAN SPECIFICATIONS ~rz°i - Z 3 NPN LOW NOISE Type ZT91 ZT92 BSY55 ZT93 ZT86 ZT88 ZT89 ZT90 ZT95 BCY65E 2N2484 ZT94 ZT83 ZT84 BCY59 BCY56 2N930 2N2219A 2N2222A ZT81 ZT82 BCY58


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    PDF BSY55 BCY65E 2N2484 BCY59 BCY56 2N930 2N2219A 2N2222A BCY58 BSY51 2N2222A zetex

    N2222

    Abstract: 2n222 2n222a ZTX326 BFS59 BFS60 BFS61 BFX84 BFY50 BFY51
    Text: SILICON TRANSISTORS Planar Medium Power and Switching n-p-n M axim u m Ratings Type No. Characteristics VcBO v CEO Vebo •c (pk) volts volts volts A B F S 59 B F S 60 BFS61 B FX84 BFX8S B F Y 50 BFY51 B FY52 ZT80 ZT81 ZT82 ZT83 ZT84 ZT 8 6 ZT 8 7 ZT88 ZT89


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    PDF BFS59 BFS60 BFS61 BFS96-98 BFX84 BFS36 2N930 BFS37 2N2605 BFS36A N2222 2n222 2n222a ZTX326 BFY50 BFY51

    N2222

    Abstract: 2N222A 2N222 2N222-A 2N2708 2n3600 N222 BFS59 BFS60 BFS61
    Text: SILICON TRANSISTORS Planar Medium Power and Switching n-p-n M axim u m Ratings Type No. Characteristics VcBO v CEO Vebo •c (pk) volts volts volts A B F S 59 B F S 60 BFS61 B FX84 BFX8S B F Y 50 BFY51 B FY52 ZT80 ZT81 ZT82 ZT83 ZT84 ZT 8 6 ZT 8 7 ZT88 ZT89


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    PDF BFS59 BFS60 BFS61 BFS96-98 BFX84 2N3571 2N3572 2N3600 at60MHz tat200 N2222 2N222A 2N222 2N222-A 2N2708 N222

    2N222A

    Abstract: N2222 zs90 2N222 BFS61 ZS150 2n3600 BFS59 2N222-A BFX84
    Text: SILICON TRANSISTORS Planar Medium Power and Switching n-p-n Maximum Ratings Type No. Characteristics VcBO v CEO Vebo •c (pk) volts volts volts A BFS59 BFS60 BFS61 BFX84 BFX8S BFY50 BFY51 BFY52 ZT80 ZT81 ZT82 ZT83 ZT84 ZT86 ZT87 ZT88 ZT89 ZT90 ZT91 ZT92


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    PDF BFS59 BFS60 BFS61 BFS96-98 BFX84 KS77B KS78B 2N222A N2222 zs90 2N222 ZS150 2n3600 2N222-A

    TO-39 1000 V

    Abstract: No abstract text available
    Text: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices show n in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military


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    PDF BC108 ZT180 ZT187 2N706A 2N706 BCY57 BSY95A TO-39 1000 V

    bc140

    Abstract: 2n1711 complement 2N1893 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88
    Text: NPN GENERAL PURPOSE TA B LE1 NPN SILICON PLANAR G EN ER A L P U R P O S E T R A N S IST O R S The devices shown in this table are general purpose transistors designed for small and medium signal, low and medium power amplification from D.C. to radio frequencies in Commercial,


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    PDF BCY79 2N929 2N930 2N2219A 2N2905A 2N2222A 2N2907A ZT181 ZT182 BCY58 bc140 2n1711 complement 2N1893 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88

    bc140

    Abstract: 2N2405 2N1893 2N2102 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91
    Text: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices shown in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military


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    PDF BC160 BFY50 2N1613 2N1711 ZT211 BCY65E BCY77 2N2270 ZT210 bc140 2N2405 2N1893 2N2102 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91

    BC108 transistor

    Abstract: bc140 2N2102 2N2605 2N4036 BC141 BC161 BCY65E BCY77 ZT189
    Text: PNP LOW LEVEL TABLE 2 - PN P SILICON PLA N A R LOW LEVEL TRANSISTORS The devices shown in this table are low level transistors designed for small and medium signal, low and medium power amplification from D C to radio frequencies in Commercial, Industrial and Military


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    PDF ZT211 ZT184 BCY79 BCY59 BCY71 ZT181 ZT182 BC160 BC140 BCY78 BC108 transistor bc140 2N2102 2N2605 2N4036 BC141 BC161 BCY65E BCY77 ZT189

    2N2102

    Abstract: 2N3262 2N4036 BCY65E BCY77 BFX84 BFX85 ZT189 ZT86 ZT88
    Text: NPN SWITCHING TABLE 3 - NPN SILICON PLANAR M E D IU M AN D HIGH SPEED SW ITCHING TRANSISTORS The devices shown in this table are characterised for medium and high speed switching applications in Commercial, Industrial and Military equipments. The devices are listed in order of decreasing Breakdown Voltage VCE0 , decreasing Collector Current


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    PDF 2N3262 BCY79 2N2218A 2N2904A 2N2219A 2N2905A 2N2221A 2N2906A 2N2222A 2N2907A 2N2102 2N4036 BCY65E BCY77 BFX84 BFX85 ZT189 ZT86 ZT88

    BC338C

    Abstract: 2N1893 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91
    Text: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices shown in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military


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    PDF MPSA55 ZTX750 ZTX550 BC327A BC327B BC327C BC328A BC328B BC328C BC338C 2N1893 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91

    BC337b

    Abstract: bc327b 2N2102 2N3262 2N4036 BCY65E BFX84 BFX85 ZT86 ZT88
    Text: NPN SW ITCHING TABLE 3 - NPN SILICON PLANAR MEDIUM AND HIGH SPEED SWITCHING TRANSISTORS The devices shown in this table are characterised for medium and high speed switching applications in Commercial, Industrial and Military equipments. The devices are listed in order of decreasing Breakdown Voltage VCE0 , decreasing Collector


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    PDF 2N3262 T0-39 T0-18 ZTX552 MPSA56 ZTX751 ZTX551 MPSA55 ZTX750 ZTX550 BC337b bc327b 2N2102 2N4036 BCY65E BFX84 BFX85 ZT86 ZT88

    typical 2n2222 npn transistors

    Abstract: 2N2475 2N2221 2N2222 2N2483 FF2221E FF2221J FF2222E FF2222J FF2483E
    Text: SEMICONDUCTOR NETWORKS STANDARD PRODUCTS - SILICON PLANAR QUAD TRANSISTORS Devices in this range consist of four electrically isolated transistors encapsulated in a single moulded or ceramic dual in-line package. Their applications range from small signal amplification through to medium


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    PDF FF3725J FF2221E FF2221J 2N2221 FF2222E FF2222J 2N2222 FF2483E FF2483J MoulTO-18 typical 2n2222 npn transistors 2N2475 2N2222 2N2483

    N2907

    Abstract: ZT152 N2904 2N2102 2N4036 BC141 BC161 BCY65E BCY77 ZT189
    Text: PNP GENERAL PURPOSE TA B LE2 PNP SILICO N PLA N A R G E N E R A L P U R P O S E T R A N S IS T O R S The devices shown in this table are general purpose transistors designedfor small and medium signal, low and medium power amplification from D.C. to radio frequencies in Commercial,


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    PDF BCY70 2N2605 2N2604 ZT181 ZT182 BCY78 BCY58 BCY72 ZT180 ZT187 N2907 ZT152 N2904 2N2102 2N4036 BC141 BC161 BCY65E BCY77 ZT189

    BSY55

    Abstract: Scans-00107837 BCY56 2N1893 2N2102 2N2405 2N4036 BFX85 ZT86 ZT88
    Text: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices show n in this table are low level transistors designed for small and medium signal, low and medium pow er amplification from D C to radio frequencies in Commercial, Industrial and Military


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    PDF 2N2219A 2N2905A 2N2222A 2N2907A ZT181 BCY58 T0-18 BCY78 BSY51 BSY55 Scans-00107837 BCY56 2N1893 2N2102 2N2405 2N4036 BFX85 ZT86 ZT88

    BCY56

    Abstract: 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177 BFY51
    Text: < Type o< OD NPN LOW LEVEL V ceo M ax *c M a x V CE sat| at V mA V 'c mA Min fT at hFE at Continued Pto, at = 2ag * C Iß Min M ax 'c m A MHz mA mW mA Package Comple­ ment 2N3053 60 40 700 1.4 150 15 50 250 150 100 50 1000 TO-39 2N4037 2N696 60 40 500 1.5


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    PDF 2N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BSY51 BSY52 BC107 BCY56 2N1131 2N1132 2N4037 BC177

    bc140

    Abstract: 2N1893 2N2102 2N2405 2N4036 BFX85 BSY55 ZT86 ZT88 ZT91
    Text: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices show n in this table are low level transistors designed for small and medium signal, low and medium pow er amplification from D C to radio frequencies in Commercial, Industrial and Military


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    PDF BCY79 2N2218A 2N2904A 2N2219A 2N2905A 2N2221A 2N2906A 2N2222A 2N2907A BFY50 bc140 2N1893 2N2102 2N2405 2N4036 BFX85 BSY55 ZT86 ZT88 ZT91

    BSY55

    Abstract: Scans-00107830 2N2222A zetex BCY56 2N1893 2N2102 2N2405 2N4036 BFX85 ZT86
    Text: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices show n in this table are low level transistors designed for small and medium signal, low and medium pow er amplification from D C to radio frequencies in Commercial, Industrial and Military


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    PDF BSY55 2N2102 2N4036 Scans-00107830 2N2222A zetex BCY56 2N1893 2N2405 2N4036 BFX85 ZT86

    2n222a

    Abstract: ZS106 2n222a npn transistor ZS90 N2222 2N2223 transistor 2n222a n3055 ZS132 ZT1482
    Text: SILICON TRANSISTORS High Voltage n-p-n T h e transistors listed in the table b elo w have m axim um coliecto r-em itter voltage ratings o f 1 0 0 volts or higher and m ay therefore be used in applications w here high voltages are encountered. Further inform ation on these transistors can be found on the page indicated in the last colum n of the table, or on request fro m Ferranti Ltd.


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    PDF ZT1480 ZT1482 ZT1484 ZT1486 ZT1488 ZT1490 2N3055 2N3439 2N3440 2N3441 2n222a ZS106 2n222a npn transistor ZS90 N2222 2N2223 transistor 2n222a n3055 ZS132

    2N2222

    Abstract: 2N2904 2N2218 2N2219 transistor 2N2475 2N2219 2N2220 2N2221 2N2905 2N2906
    Text: NPN SWITCHING Type V ceo V Max Ir 't, mA Continued Max VcE sat at hFE Switching Times (Max) at fjM in at at Package V !c mA lc Ib Min. Max. !c mA MHz mA mA — TO-39 150 250 20 25* 175* 150 TO-39 2N2904 150 250 20 25* 200* 150 TO-39 2N2905 60 150 250 20 20* 213*


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    PDF BFY51 2N2218 2N2904 2N2219 2N2905 2N2220 2N2221 2N2906 2N2222 2N2907 2N2904 2N2219 transistor 2N2475 2N2905 2N2906

    2N2102

    Abstract: 2N3262 2N4036 BCY65E BFX84 BFX85 ZT86 ZT88 ZT89
    Text: NPN SWITCHING TABLE 3 - NPN SILICON PLANAR MEDIUM AND HIGH SPEED SWITCHING TRANSISTORS The devices shown in this table are characterised for medium and high speed switching applications in Commercial, Industrial and Military equipments. The devices are listed in order of decreasing Breakdown Voltage VCE0 , decreasing Collector


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    PDF 2N3262 T0-39 T0-18 BCY79 2N2218A 2N2904A 2N2219A 2N2905A 2N2221A 2N2906A 2N2102 2N4036 BCY65E BFX84 BFX85 ZT86 ZT88 ZT89

    2N2477

    Abstract: 2N2222 2N2219 transistor 2N2938 2N2221 2N2483 FF2221E FF2221J FF2222E FF2222J
    Text: SEMICONDUCTOR NETWORKS STANDARD PRODUCTS - SILICON PLANAR QUAD TRANSISTORS Devices in this range consist of four electrically isolated transistors encapsulated in a single moulded or ceramic dual in-line package. Their applications range from small signal amplification through to medium


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    PDF FF3725J FF2221E FF2221J 2N2221 FF2222E FF2222J 2N2222 FF2483E FF2483J 2N2907A 2N2477 2N2222 2N2219 transistor 2N2938 2N2483