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    2N2906 Search Results

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    2N2906 Price and Stock

    Suzhou Good-Ark Electronics Co Ltd 2N2906

    TRANSISTOR, PNP, -40V, 0.6A, TO-
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    DigiKey 2N2906 Bulk 1,851 1
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    Microchip Technology Inc 2N2906

    SMALL-SIGNAL BJT
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    Mouser Electronics 2N2906
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    Microchip Technology Inc 2N2906 22 Weeks
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    Onlinecomponents.com 2N2906
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    onsemi 2N2906

    TRANS PNP 40V 0.6A TO18
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    Microchip Technology Inc 2N2906AUA-TR

    TRANS PNP 60V 0.6A 4SMD
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    DigiKey 2N2906AUA-TR Reel 100
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    Microchip Technology Inc JAN2N2906AUA

    TRANS PNP 60V 0.6A 4SMD
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    2N2906 Datasheets (199)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N2906 Central Semiconductor PNP SILICON TRANSISTOR Original PDF
    2N2906 On Semiconductor Bipolar Transistor, General Purpose Transistors PNP Silicon Annular Hermetic Transistors - Pol=PNP / Pkg=TO18 / Vceo=40 / Ic=0.6 / Hfe=40-120 / fT(Hz)=200M / Pwr(W)=0.4 Original PDF
    2N2906 Philips Semiconductors PNP switching transistors - Pol=PNP / Pkg=TO18 / Vceo=40 / Ic=0.6 / Hfe=40-120 / fT(Hz)=200M / Pwr(W)=0.4 Original PDF
    2N2906 Semelab Bipolar PNP Device in a Hermetically Sealed TO18 Metal Package - Pol=PNP / Pkg=TO18 / Vceo=40 / Ic=0.6 / Hfe=40-120 / fT(Hz)=200M / Pwr(W)=0.4 Original PDF
    2N2906 Semico Chip Type 2C2904A Geometry 0600 Polarity PNP - Pol=PNP / Pkg=TO18 / Vceo=40 / Ic=0.6 / Hfe=40-120 / fT(Hz)=200M / Pwr(W)=0.4 Original PDF
    2N2906 STMicroelectronics GENERAL PURPOSE AMPLIFIERS AND SWITCHES Original PDF
    2N2906 Bharat Electronics Transistor Selection Guide Scan PDF
    2N2906 Central Semiconductor PNP METAL CAN Transistors Scan PDF
    2N2906 Central Semiconductor BJT, PNP, Silicon Epitaxial Transistor, IC 0.6A - Pol=PNP / Pkg=TO18 / Vceo=40 / Ic=0.6 / Hfe=40-120 / fT(Hz)=200M / Pwr(W)=0.4 Scan PDF
    2N2906 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    2N2906 Crimson Semiconductor Transistor Selection Guide Scan PDF
    2N2906 Dionics PNP Si High Current Transistor Scan PDF
    2N2906 Fairchild Semiconductor PNP small signal general purpose amplifier & switch . - Pol=PNP / Pkg=TO18 / Vceo=40 / Ic=0.6 / Hfe=40-120 / fT(Hz)=200M / Pwr(W)=0.4 Scan PDF
    2N2906 Fairchild Semiconductor Misc. Data Book Scans 1975/76 Scan PDF
    2N2906 Ferranti Semiconductors Metal Can Transistors (Short Form) Scan PDF
    2N2906 Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
    2N2906 Ferranti Semiconductors Shortform Data Book 1971 Short Form PDF
    2N2906 General Diode Transistor Selection Guide Scan PDF
    2N2906 General Electric Semiconductor Data Book 1971 Scan PDF
    2N2906 Infineon Technologies TRANS GP BJT PNP 40V 0.6A 2TO-18 Scan PDF
    ...

    2N2906 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2N2907A

    Abstract: 2N2906AUBC 2N2907AUB 2N2906A 2N2907A JANTX 2N2907AUBC 10VDC 2N2906AL 2N2906AUA 2N2906AUB
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP SMALL SIGNAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/291 DEVICES LEVELS 2N2906A 2N2906AL 2N2906AUA 2N2906AUB


    Original
    MIL-PRF-19500/291 2N2906A 2N2906AL 2N2906AUA 2N2906AUB 2N2906AUBC 2N2907A 2N2907AL 2N2907AUA 2N2907AUB 2N2907A 2N2906AUBC 2N2907AUB 2N2906A 2N2907A JANTX 2N2907AUBC 10VDC 2N2906AL 2N2906AUA 2N2906AUB PDF

    2N2906AUB JANTXV

    Abstract: 2N2906AUB 2N2906AUBJ 2N2906AUBJS
    Text: 2N2906AUB Silicon PNP Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2906AUBJ • JANTX level (2N2906AUBJX)


    Original
    2N2906AUB MIL-PRF-19500 2N2906AUBJ) 2N2906AUBJX) 2N2906AUBJV) 2N2906AUBJS) MIL-STD-750 MIL-PRF-19500/291 2N2906AUB JANTXV 2N2906AUB 2N2906AUBJ 2N2906AUBJS PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N2906A Silicon PNP Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2906AJ • JANTX level (2N2906AJX)


    Original
    2N2906A MIL-PRF-19500 2N2906AJ) 2N2906AJX) 2N2906AJV) 2N2906AJS) MIL-STD-750 MIL-PRF-19500/291 PDF

    2N2906AUB JANTX

    Abstract: No abstract text available
    Text: 2N2906AUB Silicon PNP Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose • Low power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2906AUBJ • JANTX level (2N2906AUBJX)


    Original
    2N2906AUB MIL-PRF-19500 2N2906AUBJ) 2N2906AUBJX) 2N2906AUBJV) 2N2906AUBJS) 2N2906AUBJSR) 2N2906AUBJSF) MIL-STD-750 MIL-PRF-19500/291 2N2906AUB JANTX PDF

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR SWITCHING TRANSISTORS 2N2906 2N2907 TO-18 Metal Can Package Switching and Linear Application ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage


    Original
    2N2906 2N2907 C-120 2N2906 2907Rev010303E PDF

    2N2906 JANTX

    Abstract: 2N2906
    Text: 2N2906 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 40V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.6A All Semelab hermetically sealed products


    Original
    2N2906 O206AA) 2-Aug-02 2N2906 JANTX 2N2906 PDF

    2N2906ACSM

    Abstract: No abstract text available
    Text: 2N2906ACSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar PNP Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006)


    Original
    2N2906ACSM 2-Aug-02 2N2906ACSM PDF

    1N916

    Abstract: 2N2906E
    Text: SEMICONDUCTOR 2N2906E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 C A : ICEX=-50nA Max. , IBL=-50nA(Max.) 1 6 2 5 3 4 A1 Low Leakage Current C FEATURES D @VCE=-30V, VEB=-3V. Excellent DC Current Gain Linearity.


    Original
    2N2906E -50nA -50mA, 1N916 2N2906E PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N2906E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 C A : ICEX=-50nA Max. , IBL=-50nA(Max.) 1 6 2 5 3 4 DIM A A1 B B1 C D H J A1 Low Leakage Current C FEATURES D @VCE=-30V, VEB=-3V.


    Original
    2N2906E -50nA -50mA, PDF

    2N2906

    Abstract: No abstract text available
    Text: 2N2906 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N2906 Availability Online Store


    Original
    2N2906 2N2906 STV3208 LM3909N LM3909 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N2906 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 40V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.6A All Semelab hermetically sealed products


    Original
    2N2906 O206AA) 19-Jun-02 PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2906A • Low Power • Hermetic TO-18 Metal package. • Ideally suited for High Speed Switching and General Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated


    Original
    2N2906A -600mA 400mW O-206AA) PDF

    khb*9D5N20P

    Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
    Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC


    Original
    2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E khb*9D5N20P khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor PDF

    transistor 2N2906

    Abstract: 2N2906A 2N2906AJ 2N2906AJS 2N2906AJV 2N2906AJX Semicoa Semiconductors
    Text: 2N2906A Silicon PNP Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2906AJ • JANTX level (2N2906AJX)


    Original
    2N2906A MIL-PRF-19500 2N2906AJ) 2N2906AJX) 2N2906AJV) 2N2906AJS) MIL-STD-750 MIL-PRF-19500/291 transistor 2N2906 2N2906A 2N2906AJ 2N2906AJS 2N2906AJV 2N2906AJX Semicoa Semiconductors PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N2906+JANTXV Transistors Si PNP LP HF BJT Military/High-RelY V BR CEO (V)40 V(BR)CBO (V)60 I(C) Max. (A)600m Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)20nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.20 h(FE) Max. Current gain.


    Original
    2N2906 Freq200M PDF

    2N2907

    Abstract: 2n2907a 2n2906 2N2906A 2N2907A PNP Transistor 2n2907 TRANSISTOR PNP transistor 2N2907
    Text: 2N2906 2N2907 2N2906A 2N2907A PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2906, 2N2907 series types are silicon PNP epitaxial planar transistors designed for small signal, general purpose switching applications.


    Original
    2N2906 2N2907 2N2906A 2N2907A 2N2906, 2N2907 2N2907A 2N2907A PNP Transistor 2n2907 TRANSISTOR PNP transistor 2N2907 PDF

    BCY72 MOTOROLA

    Abstract: 2N4405 N4026 BC178 BC179 transistor 2N4033 2N2906 2N2906A N3963 2N3799
    Text: METAL SMALL-SIGNAL TRANSISTORS continued General-Purpose Amplifiers (continued) Package v (BR)CEO Volts Min fT MHz Min 2 N 3963 2N4026 2N4029 2N3799 2N2906A# 2N2907Af 2N3964 BC177 80 80 80 60 60 60 45 45 BCY79 @ i •c lc mA mA Max Min 40 100 150 30 200


    OCR Scan
    N3963 N4026 2N4029 2N3799 2N2906A# 2N2907Af 2N3964 BC177 BCY79 BCY71 BCY72 MOTOROLA 2N4405 BC178 BC179 transistor 2N4033 2N2906 2N2906A PDF

    tn-59

    Abstract: 2222 NPN N 2222 2N2221 2N2221A 2N2222A 2N2369 2N2906 2N2906A 2N2907
    Text: A/Ietal-Encased SPRAGUE Silicon SEPT T ran sistors HIGH-SPEED, MEDIUM CURRENT Type No. 2N2221 2N2221A 2N2222 2N2222A 2N2369 2N2906 2N2906A 2N2907 2N2907A 2N3115 2N3116 2N3135 2N3136 TN-54 TN-60 TN-62 TN-64 TQ-60 TQ-62 TQ-64 2N1469 2 N1469A 2N2218 2N2218A


    OCR Scan
    150mA i00mA 2N2221 2N2221A 2N2222A 2N2369 2N2906 2N2958 2N2959 2N3133 tn-59 2222 NPN N 2222 2N2906A 2N2907 PDF

    Untitled

    Abstract: No abstract text available
    Text: M aximum R atings Type No. E lectrical C haracteristics Ta=25"C, Unless O ttw w iM SpacHted hFE e Min Max 15 20 0.36 0.005 15 35 0.36 0.025 10 20 30 'ceo (V) Min CEO PD (V) Min (W) 0Tc=25°c 2N869 25 18 0.36 0.01 2N995 20 15 2N2696 25 25 2N2894 2N2906 2N2906A


    OCR Scan
    2N869 2N995 2N2696 BCY79-9 BCY79-10 BFX37 CF103 PDF

    Untitled

    Abstract: No abstract text available
    Text: 3QE D • ^.3 7 .15 7=12^537 0031143 û WÊ SGS-THOMSON [»œiLegTrtHÎ «! 2N2904/2N2905 2N2906/2N2907 S G S-THOMSON GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N2904,2N2905,2N2906 and 2N2907 are sili­ con planar epitaxial PNP transistors in JedecTO-39


    OCR Scan
    2N2904/2N2905 2N2906/2N2907 2N2904 2N2905 2N2906 2N2907 JedecTO-39 2N2904, 2N2905) PDF

    2N3055E specification

    Abstract: 2N3350 2N3904D 2N3904DCSM 2n2894 2N3680 2N2222ADCSM 2N3347 2N2993 T05 Package
    Text: BS/CECC Type No. Polarity 2N 2906\ CV-0 PNP 2N2906A; PNP 1CV' ° 2N2907 1 f f j CV-0 PNP CV-0 PNP 2N2907A 2N2913y 1 50002-186 NPN Dual '2N3054 >2N3055 / ^2N3055E r rX2N3209 1 ^¿2N3209L / • ° 50004-042 50003-020 50004-XXX 50004-XXX 2N3347 2N3348 2N3349


    OCR Scan
    ai331 2N2906\ 2N2906A* 2N2907 2N2907A 2N2913y 2N2914\ 2N2915 2N2916 2N2917 2N3055E specification 2N3350 2N3904D 2N3904DCSM 2n2894 2N3680 2N2222ADCSM 2N3347 2N2993 T05 Package PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N 2906 PN 2906 M • 2N2906APN2906A PNP SILICON GENERAL PURPOSE AMPLIFIERS AND SWITCHES 1 CASE TO-18 THE 2TT2906, 2N2906A, PN2906, PN2906A ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SFEET SWITCHING APPLICATIONS. THEY ARE


    OCR Scan
    2N2906A PN2906A 2TT2906, 2N2906A, PN2906, PN2906A 2N2221, 2N2221A, PN2221 PN2221A PDF

    2N4033

    Abstract: 2N2905 2N3702
    Text: Medium Power Amplifiers and Switches MAXIMUM RATINGS POLA­ RITY CASE 2N2838 2N2868 2N2897 2N2904 2N2905 P N N P P 2N2905A 2N2906 2N2906A 2N2907 2N2907A TYPE NO. H FE Vc, COMPLE­ C* h min max MENTARY MHz (MHz) TYPE max (mA) VcE (V) (V) (A) 225 120 200 120


    OCR Scan
    2N2838 2N2868 2N2897 2N2904 2N2905 2N2905A 2N2906 2N2906A 2N2907 2N2907A 2N4033 2N3702 PDF

    bf0262a

    Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
    Text: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A


    OCR Scan
    1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A bf0262a BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94 PDF