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    XDR DRAM

    Abstract: ODF10 K4Y54044UF
    Text: K4Y5416 /08/04 4UF XDR DRAM 256Mbit XDR DRAM(F-die) 2M x 16(/8/4) bit x 8s Banks Version 1.0 Jan. 2005 Version 1.0 Jan. 2005 Page -1 K4Y5416(/08/04)4UF XDR DRAM Change History Version 0.1( July 2004) - Preliminary - First Copy - Based on the Rambus XDR DRAMTM Datasheet Version 0.81


    Original     		PDF K4Y5416 256Mbit XDR DRAM ODF10 K4Y54044UF

    xdr rambus

    Abstract: xdr elpida
    Text: XDR DRAM 8x16Mx4 Advance Information Overview XDR DRAM CSP x4 Pinout The 512Mb Rambus XDR DRAM device is a CMOS DRAM organized as 128M words by 4 bits. The use of Differential Rambus Signaling Level DRSL technology permits 4000/ 3200/2400 Mb/s transfer rates while using conventional system and board design technologies. XDR DRAM devices are


    Original     		PDF 8x16Mx4 512Mb DL-0211 xdr rambus xdr elpida

    XDR Rambus

    Abstract: 8x4Mx16
    Text: XDR DRAM 8x4Mx16/8/4/2 Overview XDR DRAM CSP x16 Pinout The Rambus XDR™ DRAM device is a general-purpose highperformance memory device suitable for use in a broad range of applications, including computer memory, graphics, video, and any other application where high bandwidth and low


    Original     		PDF 8x4Mx16/8/4/2 512Mb DL-0476 XDR Rambus 8x4Mx16

    E1819E20

    Abstract: XDR 1gb EDX1032BBBG
    Text: DATA SHEET 1G bits XDR DRAM EDX1032BBBG 32M words x 32 bits Overview Features The EDX1032BBBG is 1G bits XDR DRAM organized as 32M words × 32 bits. They are general-purpose high-performance memory devices suitable for use in a broad range of applications.


    Original     		PDF EDX1032BBBG EDX1032BBBG EDX1032BBBG, M01E1007 E1819E20 E1819E20 XDR 1gb

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET 1G bits XDR DRAM EDX1032BBBG 32M words x 32 bits Overview Features The EDX1032BBBG is 1G bits XDR DRAM organized as 32M words × 32 bits. They are general-purpose high-performance memory devices suitable for use in a broad range of applications.


    Original     		PDF EDX1032BBBG EDX1032BBBG M01E1007 E1819E20

    104BA

    Abstract: No abstract text available
    Text: Preliminary K4Y5002 /04/08/16 4UC XDRTM DRAM 512Mbit XDR DRAM(C-die) 4M x 16(/8/4/2) bit x 8s Banks Version 0.3 Aug 2005 XDR is a trademark of Rambus Inc. Version 0.3 Aug 2005 Page -1 Preliminary K4Y5002(/04/08/16)4UC XDRTM DRAM Change History Version 0.1 (May 2005) - Preliminary


    Original     		PDF K4Y5002 512Mbit dev37 104BA

    playstation 3

    Abstract: playstation SONY PLAYSTATION 3 playstation controller XDR Rambus DDR2-667 DDR2-800 DDR333 DDR400 104BA
    Text: XDR DRAM Industry demand for memory bandwidth in next-generation digital consumer electronics, such as high-definition digital television, home servers and high-end 3-D graphics applications, is growing rapidly as more content becomes available and as processor


    Original     		PDF 512Mb E0428E60 playstation 3 playstation SONY PLAYSTATION 3 playstation controller XDR Rambus DDR2-667 DDR2-800 DDR333 DDR400 104BA

    Rambus XDR

    Abstract: DDR3-1333 XDR Rambus DDR2 x32 ELPIDA DDR3 XDR DRAM DDR2-667 DDR2-800 DDR333 DDR400
    Text: XDR DRAM Industry demand for memory bandwidth in next-generation digital consumer electronics, such as high-definition digital television, home servers and high-end 3-D graphics applications, is growing rapidly as more content becomes available and as processor performance becomes more robust.


    Original     		PDF 512Mb x16-bit GDDR3-1600 DDR3-1333 64MB/system DDR2-667 DDR2-1066 Rambus XDR DDR3-1333 XDR Rambus DDR2 x32 ELPIDA DDR3 XDR DRAM DDR2-667 DDR2-800 DDR333 DDR400

    Untitled

    Abstract: No abstract text available
    Text: K4Y50164UC K4Y50084UC K4Y50044UC K4Y50024UC XDRTM DRAM TM 512Mbit XDR DRAM C-die Revision 1.0 December 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K4Y50164UC K4Y50084UC K4Y50044UC K4Y50024UC 512Mbit

    Rambus XDR

    Abstract: XDR Rambus EDX5116ADSE EDX5116ADSE-3C-E 8x4Mx16
    Text: DATA SHEET 512M bits XDR DRAM EDX5116ADSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation


    Original     		PDF EDX5116ADSE EDX5116ADSE M01E0706 E1033E40 Rambus XDR XDR Rambus EDX5116ADSE-3C-E 8x4Mx16

    XDR Rambus

    Abstract: EDX5116ACSE xdr elpida
    Text: PRELIMINARY DATA SHEET 512M bits XDR DRAM EDX5116ACSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation


    Original     		PDF EDX5116ACSE EDX5116ACSE E0881E20 XDR Rambus xdr elpida

    EDX5116ADSE-3C-E

    Abstract: EDX5116ADSE
    Text: DATA SHEET 512M bits XDR DRAM EDX5116ADSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation


    Original     		PDF EDX5116ADSE EDX5116ADSE M01E0706 E1033E30 EDX5116ADSE-3C-E

    XDR Rambus

    Abstract: 8H001
    Text: PRELIMINARY DATA SHEET 512M bits XDR DRAM EDX5116ABSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation


    Original     		PDF EDX5116ABSE EDX5116ABSE E0643E40 XDR Rambus 8H001

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 512M bits XDR DRAM EDX5116ABSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation


    Original     		PDF EDX5116ABSE EDX5116ABSE M01E0107 E0643E30

    DQ15d

    Abstract: EDX5116ADSE-3C-E x5116 E1033E40 EDX5116ADSE T21at 8x4Mx16
    Text: DATA SHEET 512M bits XDR DRAM EDX5116ADSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation


    Original     		PDF EDX5116ADSE EDX5116ADSE M01E0706 E1033E40 DQ15d EDX5116ADSE-3C-E x5116 E1033E40 T21at 8x4Mx16

    K4Y50024UC

    Abstract: K4Y50044UC K4Y50084UC K4Y50164UC
    Text: K4Y50164UC K4Y50084UC K4Y50044UC K4Y50024UC XDRTM DRAM TM 512Mbit XDR DRAM C-die Revision 1.1 August 2006 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K4Y50164UC K4Y50084UC K4Y50044UC K4Y50024UC 512Mbit K4Y50024UC K4Y50044UC K4Y50084UC K4Y50164UC

    K4Y50084UE-JCB3

    Abstract: K4Y50164UE K4Y50164UE-JCB3
    Text: K4Y50164UE K4Y50084UE K4Y50044UE K4Y50024UE XDRTM DRAM TM 512Mbit XDR DRAM E-die Revision 1.0 Feb., 2007 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K4Y50164UE K4Y50084UE K4Y50044UE K4Y50024UE 512Mbit K4Y50084UE-JCB3 K4Y50164UE K4Y50164UE-JCB3

    014701 b

    Abstract: 8x4Mx16
    Text: PRELIMINARY DATA SHEET 512M bits XDR DRAM EDX5116ABSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation


    Original     		PDF EDX5116ABSE EDX5116ABSE M01E0107 E0643E31 014701 b 8x4Mx16

    8x4Mx16

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 512M bits XDR DRAM EDX5116ABSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation


    Original     		PDF EDX5116ABSE EDX5116ABSE M01E0107 E0643E20 8x4Mx16

    EDX5116ACSE

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 512M bits XDR DRAM EDX5116ACSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation


    Original     		PDF EDX5116ACSE EDX5116ACSE M01E0107 E0881E10

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 512M bits XDR DRAM EDX5116ABSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation


    Original     		PDF EDX5116ABSE EDX5116ABSE M01E0107 E0643E40

    DDR3-1333

    Abstract: DDR2-1066 ASIC XDR Rambus 104-FBGA DDR2-667 DDR2-800 DDR333 DDR400 ddr3 1333
    Text: XDR DRAM 最新の高性能グラフィックスや高画質HDTV対応のホームサーバなど、先端の3D画像や高精細なデジタル 画像を扱うデジタル家電市場で、膨大なデータを瞬時に処理できるメモリの需要が高まっています。


    Original     		PDF 512Mb 512Mb x16I/ODRAM6 400MHz, 500MHz, 600MHz I/ODRSL200V DDR333 104FBGA DDR2-667 DDR3-1333 DDR2-1066 ASIC XDR Rambus 104-FBGA DDR2-800 DDR333 DDR400 ddr3 1333

    DDR2 x32

    Abstract: ELPIDA DDR3 DDR3 DRAM layout ddr3 sdram chip datasheets 128mb 512MB xdr elpida DRAM elpida ELPIDA DDR2
    Text: Digital Consumer DRAM DRAM Solutions for All Digital Consumer Device Needs In the transition from analog to digital, advanced digital consumer devices have become part of our daily lives, and we are now exchanging information in many ways. To help this transition, Elpida Memory offers a diverse lineup of DRAM architectures for digital consumer devices


    Original     		PDF x32-bit 256Mb x16-bit 229mA 258mA 172mA 256Mb 512Mb E0652E90 DDR2 x32 ELPIDA DDR3 DDR3 DRAM layout ddr3 sdram chip datasheets 128mb 512MB xdr elpida DRAM elpida ELPIDA DDR2

    sdram pin voltage

    Abstract: DRAM elpida elpida SDRAM
    Text: Digital Consumer DRAM DRAM Solutions for All Digital Consumer Device Needs In the transition from analog to digital, advanced digital consumer devices have become part of our daily lives, and we are now exchanging information in many ways. To help this transition, Elpida Memory offers a diverse lineup of DRAM architectures for digital consumer devices


    Original     		PDF 210mA 140mA 256Mb 512Mb E0652E40 sdram pin voltage DRAM elpida elpida SDRAM