XDR Rambus
Abstract: 8x4Mx16
Text: XDR DRAM 8x4Mx16/8/4/2 Overview XDR DRAM CSP x16 Pinout The Rambus XDR™ DRAM device is a general-purpose highperformance memory device suitable for use in a broad range of applications, including computer memory, graphics, video, and any other application where high bandwidth and low
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8x4Mx16/8/4/2
512Mb
DL-0476
XDR Rambus
8x4Mx16
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HYB18H512322BF
Abstract: qimonda hyb18h5
Text: March 2008 IDRD51-0-A1F1C–32C XDR DRAM 512-Mbit XDR DRAM RoHS compliant Data Sheet Rev. 1.0 Data Sheet IDRD51-0-A1F1C 512-Mbit XDR DRAM IDRD51-0-A1F1C–32C Revision History: 2008-03, Rev. 1.0 Page Subjects major changes since last revision All New Data Sheet
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IDRD51-0-A1F1C
512-Mbit
08312007-N57X-JNTM
HYB18H512322BF
qimonda hyb18h5
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Untitled
Abstract: No abstract text available
Text: K4Y50164UC K4Y50084UC K4Y50044UC K4Y50024UC XDRTM DRAM TM 512Mbit XDR DRAM C-die Revision 1.0 December 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4Y50164UC
K4Y50084UC
K4Y50044UC
K4Y50024UC
512Mbit
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smd ra6
Abstract: XDR DRAM XDR Rambus SMD fuse BA
Text: TC59YM816BKG24A,32A,32B,40B,32C,40C TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Lead Free OVERVIEW The Rambus XDRTM DRAM device is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high
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TC59YM816BKG24A
256Mb
smd ra6
XDR DRAM
XDR Rambus
SMD fuse BA
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Untitled
Abstract: No abstract text available
Text: November 2008 IDRD51-0-A1F1C–[32C/40D] XDR DRAM 512-Mbit XDR DRAM RoHS compliant Internet Data Sheet Rev. 1.12 Internet Data Sheet IDRD51-0-A1F1C 512-Mbit XDR DRAM IDRD51-0-A1F1C–[32C/40D] Revision History: 2008-11, Rev. 1.12 Page Subjects major changes since last revision
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IDRD51-0-A1F1C
32C/40D]
512-Mbit
IDRD51-0-A1F1C
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014701 b
Abstract: 8x4Mx16
Text: PRELIMINARY DATA SHEET 512M bits XDR DRAM EDX5116ABSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation
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EDX5116ABSE
EDX5116ABSE
M01E0107
E0643E31
014701 b
8x4Mx16
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8x4Mx16
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 512M bits XDR DRAM EDX5116ABSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation
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EDX5116ABSE
EDX5116ABSE
M01E0107
E0643E20
8x4Mx16
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rambus xdr
Abstract: No abstract text available
Text: TC59YM916BKG24A,32A,32B,40B,32C,40C TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Lead Free OVERVIEW The Rambus XDRTM DRAM device is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high
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TC59YM916BKG24A
512Mb
rambus xdr
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s34 diode
Abstract: transistor SMD t17 XDR Rambus TPDN SMD fuse BA
Text: TC59YM916BKG24A,32A,32B,40B,32C,40C TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC OVERVIEW Lead Free The Rambus XDRTM DRAM device is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high
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TC59YM916BKG24A
512Mb
s34 diode
transistor SMD t17
XDR Rambus
TPDN
SMD fuse BA
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Rambus XDR
Abstract: XDR Rambus EDX5116ADSE EDX5116ADSE-3C-E 8x4Mx16
Text: DATA SHEET 512M bits XDR DRAM EDX5116ADSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation
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EDX5116ADSE
EDX5116ADSE
M01E0706
E1033E40
Rambus XDR
XDR Rambus
EDX5116ADSE-3C-E
8x4Mx16
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XDR Rambus
Abstract: EDX5116ACSE xdr elpida
Text: PRELIMINARY DATA SHEET 512M bits XDR DRAM EDX5116ACSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation
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EDX5116ACSE
EDX5116ACSE
E0881E20
XDR Rambus
xdr elpida
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Sony Semiconductor Replacement Handbook 1991
Abstract: sony bx 1387 XDR Rambus transistor D880 yc 2604 replacement toshiba 2685 DL-0171 D880 2006 international 9400 wiring diagram sony x35
Text: Title Page Cell Broadband Engine CMOS SOI 90 nm Hardware Initialization Guide Version 1.5 November 30, 2007 Copyright and Disclaimer Copyright International Business Machines Corporation, Sony Computer Entertainment Incorporated, Toshiba Corpora- tion 2006, 2007
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DL-0178)
Sony Semiconductor Replacement Handbook 1991
sony bx 1387
XDR Rambus
transistor D880
yc 2604 replacement
toshiba 2685
DL-0171
D880
2006 international 9400 wiring diagram
sony x35
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EDX5116ADSE-3C-E
Abstract: EDX5116ADSE
Text: DATA SHEET 512M bits XDR DRAM EDX5116ADSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation
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EDX5116ADSE
EDX5116ADSE
M01E0706
E1033E30
EDX5116ADSE-3C-E
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K4Y50024UC
Abstract: K4Y50044UC K4Y50084UC K4Y50164UC
Text: K4Y50164UC K4Y50084UC K4Y50044UC K4Y50024UC XDRTM DRAM TM 512Mbit XDR DRAM C-die Revision 1.1 August 2006 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4Y50164UC
K4Y50084UC
K4Y50044UC
K4Y50024UC
512Mbit
K4Y50024UC
K4Y50044UC
K4Y50084UC
K4Y50164UC
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Untitled
Abstract: No abstract text available
Text: DATA SHEET 1G bits XDR DRAM EDX1032BBBG 32M words x 32 bits Overview Features The EDX1032BBBG is 1G bits XDR DRAM organized as 32M words × 32 bits. They are general-purpose high-performance memory devices suitable for use in a broad range of applications.
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EDX1032BBBG
EDX1032BBBG
M01E1007
E1819E20
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104BA
Abstract: No abstract text available
Text: Preliminary K4Y5002 /04/08/16 4UC XDRTM DRAM 512Mbit XDR DRAM(C-die) 4M x 16(/8/4/2) bit x 8s Banks Version 0.3 Aug 2005 XDR is a trademark of Rambus Inc. Version 0.3 Aug 2005 Page -1 Preliminary K4Y5002(/04/08/16)4UC XDRTM DRAM Change History Version 0.1 (May 2005) - Preliminary
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K4Y5002
512Mbit
dev37
104BA
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K4Y50084UE-JCB3
Abstract: K4Y50164UE K4Y50164UE-JCB3
Text: K4Y50164UE K4Y50084UE K4Y50044UE K4Y50024UE XDRTM DRAM TM 512Mbit XDR DRAM E-die Revision 1.0 Feb., 2007 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4Y50164UE
K4Y50084UE
K4Y50044UE
K4Y50024UE
512Mbit
K4Y50084UE-JCB3
K4Y50164UE
K4Y50164UE-JCB3
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EDX5116ACSE
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 512M bits XDR DRAM EDX5116ACSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation
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EDX5116ACSE
EDX5116ACSE
M01E0107
E0881E10
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 512M bits XDR DRAM EDX5116ABSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation
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EDX5116ABSE
EDX5116ABSE
M01E0107
E0643E40
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Untitled
Abstract: No abstract text available
Text: Preliminary K4Y5016 /08/04/02 4UC XDRTM DRAM 512Mbit XDRTM DRAM(C-die) 4M x 16(/8/4/2) bit x 8s Banks Version 0.3 Aug 2005 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4Y5016
512Mbit
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XDR Rambus
Abstract: 8H001
Text: PRELIMINARY DATA SHEET 512M bits XDR DRAM EDX5116ABSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation
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EDX5116ABSE
EDX5116ABSE
E0643E40
XDR Rambus
8H001
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Cell Broadband Engine CMOS SOI 65 nm Hardware Initialization Guide
Abstract: Cell Broadband Engine Hardware Initialization Guide transistor d880 t d880 DL-0159 DL-0178 d880 transistor toshiba f630 Rambus XDR cell broadband
Text: Title Page Cell Broadband Engine CMOS SOI 65 nm Hardware Initialization Guide Version 1.01 June 8, 2007—Preliminary Copyright and Disclaimer Copyright International Business Machines Corporation, Sony Computer Entertainment Incorporated, Toshiba Corpora-
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2007--Preliminary
DL-0178)
Cell Broadband Engine CMOS SOI 65 nm Hardware Initialization Guide
Cell Broadband Engine Hardware Initialization Guide
transistor d880
t d880
DL-0159
DL-0178
d880 transistor
toshiba f630
Rambus XDR
cell broadband
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xdr rambus
Abstract: SMD fuse BA
Text: TC59YM916BKG24A,32A,32B,40B,32C,40C TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Lead Free OVERVIEW The Rambus XDRTM DRAM device is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high
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TC59YM916BKG24A
512Mb
xdr rambus
SMD fuse BA
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 512M bits XDR DRAM EDX5116ABSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation
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EDX5116ABSE
EDX5116ABSE
M01E0107
E0643E30
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