014701 b
Abstract: 8x4Mx16
Text: PRELIMINARY DATA SHEET 512M bits XDR DRAM EDX5116ABSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation
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PDF
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EDX5116ABSE
EDX5116ABSE
M01E0107
E0643E31
014701 b
8x4Mx16
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8x4Mx16
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 512M bits XDR DRAM EDX5116ABSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation
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Original
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PDF
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EDX5116ABSE
EDX5116ABSE
M01E0107
E0643E20
8x4Mx16
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 512M bits XDR DRAM EDX5116ABSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation
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Original
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PDF
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EDX5116ABSE
EDX5116ABSE
M01E0107
E0643E40
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XDR Rambus
Abstract: 8H001
Text: PRELIMINARY DATA SHEET 512M bits XDR DRAM EDX5116ABSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation
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Original
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PDF
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EDX5116ABSE
EDX5116ABSE
E0643E40
XDR Rambus
8H001
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 512M bits XDR DRAM EDX5116ABSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation
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Original
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PDF
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EDX5116ABSE
EDX5116ABSE
M01E0107
E0643E30
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