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    014701 b

    Abstract: 8x4Mx16
    Text: PRELIMINARY DATA SHEET 512M bits XDR DRAM EDX5116ABSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation


    Original
    PDF EDX5116ABSE EDX5116ABSE M01E0107 E0643E31 014701 b 8x4Mx16

    8x4Mx16

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 512M bits XDR DRAM EDX5116ABSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation


    Original
    PDF EDX5116ABSE EDX5116ABSE M01E0107 E0643E20 8x4Mx16

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 512M bits XDR DRAM EDX5116ABSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation


    Original
    PDF EDX5116ABSE EDX5116ABSE M01E0107 E0643E40

    XDR Rambus

    Abstract: 8H001
    Text: PRELIMINARY DATA SHEET 512M bits XDR DRAM EDX5116ABSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation


    Original
    PDF EDX5116ABSE EDX5116ABSE E0643E40 XDR Rambus 8H001

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 512M bits XDR DRAM EDX5116ABSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation


    Original
    PDF EDX5116ABSE EDX5116ABSE M01E0107 E0643E30