MGF4963BL
Abstract: HEMT marking K GD-32 low noise Micro-X marking "K" MGF4963B
Text: < Low Noise GaAs HEMT > MGF4963BL Micro-X type plastic package DESCRIPTION The MGF4963BL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. Outline Drawing FEATURES Low noise figure @ f=20GHz NFmin. = 0.70dB (Typ.)
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MGF4963BL
MGF4963BL
20GHz
4000pcs
HEMT marking K
GD-32
low noise Micro-X marking "K"
MGF4963B
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RO4350B ROGERS
Abstract: transistor "micro-x" "marking" 3 RO4350B max current MGF4941CL GD-32 low noise Micro-X marking "K" RO4350B
Text: < Low Noise GaAs HEMT > MGF4941CL Micro-X type plastic package DESCRIPTION The MGF4941CL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. The MGF4941CL is designed for automotive application and AEC-Q101
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MGF4941CL
MGF4941CL
AEC-Q101
4000pcs
RO4350B ROGERS
transistor "micro-x" "marking" 3
RO4350B max current
GD-32
low noise Micro-X marking "K"
RO4350B
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Untitled
Abstract: No abstract text available
Text: < Low Noise GaAs HEMT > MGF4963BL Micro-X type plastic package DESCRIPTION The MGF4963BL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. Outline Drawing FEATURES Low noise figure @ f=20GHz NFmin. = 0.70dB (Typ.)
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MGF4963BL
MGF4963BL
20GHz
4000pcs
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Untitled
Abstract: No abstract text available
Text: < Low Noise GaAs HEMT > MGF4964BL Micro-X type plastic package DESCRIPTION The MGF4964BL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. Outline Drawing FEATURES Low noise figure @ f=20GHz NFmin. = 0.65dB (Typ.)
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MGF4964BL
MGF4964BL
20GHz
4000pcs
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MGF4964
Abstract: Micro-X marking "K" MGF4964BL transistor "micro-x" "marking" 3 low noise Micro-X marking "K" HEMT marking K Low Noise Gaas GD-32 MGF4964B MGF496
Text: < Low Noise GaAs HEMT > MGF4964BL Micro-X type plastic package DESCRIPTION The MGF4964BL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. Outline Drawing FEATURES Low noise figure @ f=20GHz NFmin. = 0.65dB (Typ.)
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MGF4964BL
MGF4964BL
20GHz
4000pcs
MGF4964
Micro-X marking "K"
transistor "micro-x" "marking" 3
low noise Micro-X marking "K"
HEMT marking K
Low Noise Gaas
GD-32
MGF4964B
MGF496
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Micro-X marking "K"
Abstract: low noise Micro-X marking "K" Micro-X Marking E RO4350B rogers HEMT marking G HEMT marking K GD-32 hemt low noise die Micro-X Marking v transistor "micro-x" "marking" 3
Text: PRELIMINARY < Low Noise GaAs HEMT > MGF4941CL Micro-X type plastic package DESCRIPTION The MGF4941CL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. Outline Drawing FEATURES Low noise figure @ f=25.2GHz
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MGF4941CL
MGF4941CL
4000pcs
Micro-X marking "K"
low noise Micro-X marking "K"
Micro-X Marking E
RO4350B rogers
HEMT marking G
HEMT marking K
GD-32
hemt low noise die
Micro-X Marking v
transistor "micro-x" "marking" 3
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Untitled
Abstract: No abstract text available
Text: < Low Noise GaAs HEMT > MGF4941CL Micro-X type plastic package DESCRIPTION The MGF4941CL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. The MGF4941CL is designed for automotive application and AEC-Q101
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MGF4941CL
MGF4941CL
AEC-Q101
4000pcs
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1 928 405 766
Abstract: GD-32 rogers 4403
Text: < Low Noise GaAs HEMT > MGF4941AL Micro-X type plastic package DESCRIPTION The MGF4941AL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in Ku band amplifiers. Outline Drawing FEATURES Low noise figure @ f=12GHz NFmin. = 0.35dB (Typ.)
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MGF4941AL
MGF4941AL
12GHz
4000pcs
1 928 405 766
GD-32
rogers 4403
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K 1358 fet transistor
Abstract: FET K 1358 MGFC4419G C 4804 transistor MGFC4419 GaAs FET HEMT Chips GaAs FET chip 581
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC4419G PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. InGaAs HEMT Chip DESCRIPTION OUTLINE DRAWING The MGFC4419G low-noise HEMT High electron Mobility Transistor is designed for use in X to K band amplifiers.
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MGFC4419G
MGFC4419G
12GHz
K 1358 fet transistor
FET K 1358
C 4804 transistor
MGFC4419
GaAs FET HEMT Chips
GaAs FET chip 581
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MGF1802
Abstract: mgf431 MGF43180 mitsubishi mgf MGF1902B-65
Text: MGF431OD Series L1~o- o~i -oqof- SUPER LOW NOISE InOaAs HEMT DESCRIPTION OUTLINE DRAWING The MGF431OD series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. The hermetically sealed metal-ceramic package assures minimum parasitic losses, and has a
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MGF431OD
12GHz
MGF4314D:
MGF4316D:
MGF4317D:
MGF4318D:
12GHz
MGF4S17D-O1
MGF43I4E45.
MGF1802
mgf431
MGF43180
mitsubishi mgf
MGF1902B-65
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Untitled
Abstract: No abstract text available
Text: SGK0910-60A-R X-Band Internally Matched GaN-HEMT FEATURES High Output Power: P5dB=48.0dBm Typ. High Gain: GL=12.0dB (Typ.) High PAE: add=35% (Typ.) Broad Band: 9.2 to 10.0GHz Impedance Matched Zin/Zout = 50ohm Hermetically Sealed Package
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SGK0910-60A-R
50ohm
SGK0910-60A-R
50ohm
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SGK0910-120A-R
Abstract: No abstract text available
Text: SGK0910-120A-R X-Band Internally Matched GaN-HEMT FEATURES High Output Power: P5dB=51.0dBm Typ. High Gain: GL=11.5dB (Typ.) High PAE: add=35% (Typ.) Broad Band: 9.2 to 10.0GHz Impedance Matched Zin/Zout = 50ohm Hermetically Sealed Package
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SGK0910-120A-R
50ohm
SGK0910-120A-R
50ohm
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Untitled
Abstract: No abstract text available
Text: SGK0910-30A-R X-Band Internally Matched GaN-HEMT FEATURES High Output Power: P5dB=45.0dBm Typ. High Gain: GL=12.0dB (Typ.) High PAE: add=35% (Typ.) Broad Band: 9.2 to 10.0GHz Impedance Matched Zin/Zout = 50ohm Hermetically Sealed Package
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SGK0910-30A-R
50ohm
SGK0910-30A-R
50ohm
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fet transistor a03
Abstract: MGFC4419
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC4419G InGaAs HEMT DESCRIPTION The MGFC4419G low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. OUTLINE DRAWING FEATURES • Low noise figure NFmin. = 0.50dB (MAX.) • High associated gain
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MGFC4419G
MGFC4419G
12GHz
fet transistor a03
MGFC4419
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MGF4317D
Abstract: MGF-4317D MGF4310 MGF4316D MGF4318D 4310D
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4310D Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION OUTLINE DRAWING The MGF4310D series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. The hermetically sealed metal-ceramic
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F4310D
MGF4310D
12GHz
GF4314D:
GF4316D:
F4317D:
GF4318D:
12GHz
4310D
MGF4317D
MGF-4317D
MGF4310
MGF4316D
MGF4318D
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GaAs FET HEMT Chips
Abstract: on 5295 transistor MGFC4453A transistor on 4436 InGaAs HEMT mitsubishi low noise x band hemt transistor fet transistor a03 FET Spec sheet transistor on 5295 5458 transistor
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC4453A InGaAs HEMT DESCRIPTION The M G FC4453A low-noise HEMT High Electron Mobility OUTLINE DRAWING Transistor is designed for use in X to K band amplifiers. Unit : u m FEATURES Low noise figure @ f=12GHz NFmin. = 0.40dB (TYP.)
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MGFC4453A
MGFC4453A
12GHz
25pcs
GaAs FET HEMT Chips
on 5295 transistor
transistor on 4436
InGaAs HEMT mitsubishi
low noise x band hemt transistor
fet transistor a03
FET Spec sheet
transistor on 5295
5458 transistor
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MGF4310
Abstract: MGF4314D MGF4318D MGF4310D MGF4316D MGF4317D M5M27C102P MGF4317 MGF4318 MGF431
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4310D Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION OUTLINE DRAWING The MGF4310D series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. The hermetically sealed metal-ceramic
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MGF4310D
12GHz
MGF4314D:
MGF4316D.
MGF4317D:
MGF4318D:
M5M27C102P
RV-15
MGF4310
MGF4314D
MGF4318D
MGF4316D
MGF4317D
MGF4317
MGF4318
MGF431
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MGF4310
Abstract: 6020M f491
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4910F Series S U P E R LOW NOISE InGaAs HEMT DESCRIPTION The M GF4910F series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. The hermetically sealed metal-ceramic
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F4910F
GF4910F
MGF4310F
12GHz
GF4919F:
GF4916F:
12GHz
27C102P,
RV-15
MGF4310
6020M
f491
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MGF4316F
Abstract: MGF4319F MGF4310 MGF4319 251C M5M27C102P
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4310F Series S U P E R LOW NOISE InGaAs HEMT D ESC R IP T IO N O U TLIN E DRAWING The MGF4310F series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. The hermetically sealed metal-ceramic
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MGF4310F
12GHz
MGF4319F:
MGF4316F:
M5M27C102P
RV-15
1048576-BIT
65536-W0RD
MGF4316F
MGF4319F
MGF4310
MGF4319
251C
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MGF4918D
Abstract: mgf4914 MGF4914D MGF4910 mitsubishi mgf MGF4917D MGF4916D MGF4917 MGF4910D
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GF4910D Series TA P E C A R R IER S U P E R LOW NOISE InGaAs HEMT DESCRIPTION OUTLINE D R A W IN G The MGF4910D series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. The hermetically sealed metal-ceramic
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MGF4910D
491OD
12GHz
MGF4914D:
MGF4916D:
MGF4917D:
MGF4918D:
M5M27C102P
MGF4918D
mgf4914
MGF4914D
MGF4910
mitsubishi mgf
MGF4917D
MGF4916D
MGF4917
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Untitled
Abstract: No abstract text available
Text: ta n a a i DDi7 ¿ m DOT MITSUBISHI SEMICONDUCTOR <GaAs FET> • M G F4910E Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION The M G F 4 9 1 0E series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. The hermetically sealed metal-ceramic
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F4910E
F4310E
F4914E
F4918E
F4919E
MGF4910E
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MGF4418D
Abstract: low noise x band hemt transistor MGF4410D NF510 MGF4416D gm 09 134 755 MGF4417D low noise hemt transistor k 1241 transistor transistor K D 2499
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> bSM'iôe'i 0 Q 1 7 Û Ô 3 T32 MGF4410D Series SU PER LOW NOISE InGaAs HEMT DESCRIPTION The M G F 4 4 1 0 D OUTLINE DRAWING series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. The hermetically sealed metal-ceramic
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MGF4410D
12GHz
MGF4416D:
MGF4417D:
MGF4418D:
unit071
0017A6b
MGF4418D
low noise x band hemt transistor
NF510
MGF4416D
gm 09 134 755
MGF4417D
low noise hemt transistor
k 1241 transistor
transistor K D 2499
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MGF4714AP
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4714AP PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT DESCRIPTION The MGF4714AP low-noiseHEMT High Electron Mobili ty Transistor is designed for use in X band amplifiers. The plastic mold package offer high cost performance,
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MGF4714AP
MGF4714AP
12GHz
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IG 057-2
Abstract: No abstract text available
Text: A m it s u b is h i MGFC4420D SERIES Die ELECTRONIC DEVICE GROUP DESCRIPTION FEATURES The MGFC4420D Series super-low-noise HEMT (High Electron Mobility Transistor) is designed for use in X to K band low noise amplifiers. These devices feature a 0.25 x 150|am "T"
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MGFC4420D
12GHz
MGFC4424D:
MGFC4427D:
MGFC4420C
MGFC4424D-02
MGFC4424D-03
MGFC4427D-03
IG 057-2
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