MGF4919
Abstract: mgf4918 mgf4914 MGF4910 gs 431 transistor
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4910E Series _ SUPER LOW NOISE InGaAs HEMT DESCRIPTION OUTLINE DRAWING The M G F 4 9 1 0 E series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to
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F4910E
F4914E
F4918E
F4919E
MGF4910E
GF4914E
GF4919E
MGF4919
mgf4918
mgf4914
MGF4910
gs 431 transistor
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Untitled
Abstract: No abstract text available
Text: ta n a a i DDi7 ¿ m DOT MITSUBISHI SEMICONDUCTOR <GaAs FET> • M G F4910E Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION The M G F 4 9 1 0E series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. The hermetically sealed metal-ceramic
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F4910E
F4310E
F4914E
F4918E
F4919E
MGF4910E
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4910E
Abstract: MGF4914E MGF4918E
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4910E Series SUPER LOW NOISE InGaAs H E M T j DESCRIPTION The M G F4910E OUTLINE DRAWING series su per-lo w -n oise HEMT U n it m illim e te rs inches (High Electron M o bility Transistor) is designed fo r use in X to
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F4910E
4910E
MGF4914E
MGF4918E
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