MGF4963BL
Abstract: HEMT marking K GD-32 low noise Micro-X marking "K" MGF4963B
Text: < Low Noise GaAs HEMT > MGF4963BL Micro-X type plastic package DESCRIPTION The MGF4963BL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. Outline Drawing FEATURES Low noise figure @ f=20GHz NFmin. = 0.70dB (Typ.)
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MGF4963BL
MGF4963BL
20GHz
4000pcs
HEMT marking K
GD-32
low noise Micro-X marking "K"
MGF4963B
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Untitled
Abstract: No abstract text available
Text: < Low Noise GaAs HEMT > MGF4963BL Micro-X type plastic package DESCRIPTION The MGF4963BL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. Outline Drawing FEATURES Low noise figure @ f=20GHz NFmin. = 0.70dB (Typ.)
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Original
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PDF
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MGF4963BL
MGF4963BL
20GHz
4000pcs
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MGF4963BL
Abstract: InGaAs HEMT mitsubishi MGF4963B MGF496 RO4003C
Text: 16/Oct./2009 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4963BL SUPER LOW NOISE InGaAs HEMT DESCRIPTION Outline Drawing The MGF4963BL super-low noise HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. FEATURES Low noise figure @ f=20GHz
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Original
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PDF
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16/Oct
MGF4963BL
MGF4963BL
20GHz
4000pcs
InGaAs HEMT mitsubishi
MGF4963B
MGF496
RO4003C
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