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    VTE3374LA Search Results

    VTE3374LA Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    VTE3374LA PerkinElmer Optoelectronics GaAlAs Infrared Emitting Diode Original PDF
    VTE3374LA EG&G Vactec GaAlAs Infrared Emitting Diodes Scan PDF

    VTE3374LA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C1383 NPN transistor collector base and emitter

    Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
    Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,


    Original
    PDF 10-foot C1383 NPN transistor collector base and emitter NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383

    Untitled

    Abstract: No abstract text available
    Text: GaAlAs Infrared Emitting Diodes VTE3372LA, 74LA Long T-1 3 mm Plastic Package — 880 nm PACKAGE DIMENSIONS inch (mm) CASE 50A Long T-1 (3 mm) CHIP SIZE: .011" x .011" DESCRIPTION This narrow beam angle 3 mm diameter plastic packaged emitter is suitable for use in optical switch applications. It contains a small


    Original
    PDF VTE3372LA, VTE3372LA VTE3374LA

    VTE3372LAH

    Abstract: No abstract text available
    Text: GaAlAs Infrared Emitting Diodes VTE3372LAH, 74LAH Long T-1 3 mm Plastic Package — 880 n PACKAGE DIMENSIONS inch (mm) CASE 50A Long T-1 (3 mm) CHIP SIZE: .011" x .011" DESCRIPTION This narrow beam angle 3 mm diameter plastic packaged emitter is suitable for use in optical switch applications. It contains a small


    Original
    PDF VTE3372LAH, 74LAH VTE3372LAH VTE3374LAH VTE3372LAH

    VTE3372LA

    Abstract: VTE3374LA
    Text: GaAlAs Infrared Emitting Diodes VTE3372LA, 74LA Long T-1 3 mm Plastic Package — 880 nm PACKAGE DIMENSIONS inch (mm) CASE 50A Long T-1 (3 mm) CHIP SIZE: .011" x .011" DESCRIPTION This narrow beam angle 3 mm diameter plastic packaged emitter is suitable for use in optical switch applications. It contains a small


    Original
    PDF VTE3372LA, VTE3372LA VTE3374LA VTE3372LA VTE3374LA

    VTE1063

    Abstract: VTE1163 VTE1261 VTE1262 VTE1281-1 VTE1281-2 VTE1281F VTE1281W-1 VTE1281W-2 VTE1285
    Text: infrared emitting diodes Features 880 nm • Nine standard packages in hermetic and low-cost epoxy • End- and side-radiating packages • Graded Output • High efficiency GaAIAs, 880 nm LPE process Delivers twice the power of conventional GaAs 940 nm emitters


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    PDF VTE7172 VTE7173 VTE1013 VTE1113 VTE3322LA VTE3324LA VTE3372LA VTE3374LA VTE1063 VTE1163 VTE1261 VTE1262 VTE1281-1 VTE1281-2 VTE1281F VTE1281W-1 VTE1281W-2 VTE1285

    VTE1291-2

    Abstract: VTE1063 VTE1163 VTE1261 VTE1262 VTE1281-1 VTE1281-2 VTE1281F VTE1281W-1 VTE1281W-2
    Text: GaAlAs Infrared Emitting Diodes VTE1063 TO-46 Flat Window Package — 880 nm PACKAGE DIMENSIONS inch mm CASE 24 TO-46 HERMETIC (Flat Window) CHIP SIZE: .018" x .018" DESCRIPTION This wide beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAlAs, 880 nm, high efficiency IRED chip suitable for higher


    Original
    PDF VTE1063 VTE7172 VTE7173 VTE1291-2 VTE1063 VTE1163 VTE1261 VTE1262 VTE1281-1 VTE1281-2 VTE1281F VTE1281W-1 VTE1281W-2

    Untitled

    Abstract: No abstract text available
    Text: SbE D • BGBGbD^ 00D1222 STS GaAIAs Infrared Emitting Diodes VTE 337 2LA, 74LA Long T-1 Plastic Package — 880 nm E H V C T G & G VACTEC - T-HM3 . PACKAGE DIMENSIONS inch mm .2 2 .0 6 ( 5 .6 ) ( 1 .5 ) ( 0 .5 8 ) „ ( 0 .4 3 ) .0 2 3 .0 1 7 .0 2 6 .0 1 7


    OCR Scan
    PDF 00D1222 VTE3372LA VTE3374LA

    H0A0872-n55

    Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
    Text: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1


    OCR Scan
    PDF 1N5722 1N5723 1N5724 1N5725 1N6264 1N6265 1N6266 2004-90xx 2600-70XX 2N5777-80 H0A0872-n55 H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12

    DDD1222

    Abstract: VTE3372LA VTE3374LA
    Text: SbE D 303DbDT DDD1222 STS GaAIAs Infrared Emitting Diodes VCT VTE3372LA, 74LA Long T-1 Plastic Package — 880 nm E 6 & 6 VACTEC - T-H» - I 3 h PACKAGE DIMENSIONS inch mm .2 2 .0 6 (5 .6 ) ( 1 .5 ) ( 0 .5 *) ( 0 . 4 -3 ) .0 2 3 .0 1 7 .0 2 6 .0 1 7 .1 2 6


    OCR Scan
    PDF DDD1222 VTE3372LA, VTE3372LA VTE3374LA VTE3372LA VTE3374LA