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    Excelitas Technologies Corporation VTE1163H

    Ir Emitter, 880Nm, 4.78Mm, To-46-2, Though Hole; Viewing Angle:10°; Diode Case Style:To-46; Forward Current If(Av):100Ma; Forward Voltage Vf Max:2.8V; Rise Time:1Μs; Fall Time Tf:1Μs; Operating Temperature Min:-55°C; Product Range:- Rohs Compliant: Yes |Excelitas Tech VTE1163H
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    VTE1163 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    VTE1163 PerkinElmer Optoelectronics GaAlAs Infrared Emitting Diode Original PDF
    VTE1163 EG&G HIGH POWER GaAIAs INFRARED EMITTING DIODES 880 nm Scan PDF
    VTE1163 EG&G Vactec GaAlAs Infrared Emitting Diodes Scan PDF

    VTE1163 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: GaAlAs Infrared Emitting Diodes VTE1163H TO-46 Lensed Package — 880 nm PACKAGE DIMENSIONS inch mm CASE 24 TO-46 HERMETIC (Lensed) CHIP SIZE: .018" x .018" DESCRIPTION This narrow beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAlAs, 880 nm, high efficiency IRED chip


    Original     		PDF VTE1163H

    VTE1163H

    Abstract: 880nm
    Text: GaAlAs Infrared Emitting Diodes VTE1163H TO-46 Lensed Package — 880 nm PACKAGE DIMENSIONS inch mm CASE 24 TO-46 HERMETIC (Lensed) CHIP SIZE: .018" x .018" DESCRIPTION This narrow beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAlAs, 880 nm, high efficiency IRED chip


    Original     		PDF VTE1163H VTE1163H 880nm

    VTE1163

    Abstract: No abstract text available
    Text: GaAlAs Infrared Emitting Diodes VTE1163 TO-46 Lensed Package — 880 nm PACKAGE DIMENSIONS inch mm CASE 24 TO-46 HERMETIC (Lensed) CHIP SIZE: .018" x .018" DESCRIPTION This narrow beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAlAs, 880 nm, high efficiency IRED chip


    Original     		PDF VTE1163 VTE1163

    C1383 NPN transistor collector base and emitter

    Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
    Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,


    Original     		PDF 10-foot C1383 NPN transistor collector base and emitter NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383

    VTE1063

    Abstract: VTE1163 VTE1261 VTE1262 VTE1281-1 VTE1281-2 VTE1281F VTE1281W-1 VTE1281W-2 VTE1285
    Text: infrared emitting diodes Features 880 nm • Nine standard packages in hermetic and low-cost epoxy • End- and side-radiating packages • Graded Output • High efficiency GaAIAs, 880 nm LPE process Delivers twice the power of conventional GaAs 940 nm emitters


    Original     		PDF VTE7172 VTE7173 VTE1013 VTE1113 VTE3322LA VTE3324LA VTE3372LA VTE3374LA VTE1063 VTE1163 VTE1261 VTE1262 VTE1281-1 VTE1281-2 VTE1281F VTE1281W-1 VTE1281W-2 VTE1285

    VTE1291-2

    Abstract: VTE1063 VTE1163 VTE1261 VTE1262 VTE1281-1 VTE1281-2 VTE1281F VTE1281W-1 VTE1281W-2
    Text: GaAlAs Infrared Emitting Diodes VTE1063 TO-46 Flat Window Package — 880 nm PACKAGE DIMENSIONS inch mm CASE 24 TO-46 HERMETIC (Flat Window) CHIP SIZE: .018" x .018" DESCRIPTION This wide beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAlAs, 880 nm, high efficiency IRED chip suitable for higher


    Original     		PDF VTE1063 VTE7172 VTE7173 VTE1291-2 VTE1063 VTE1163 VTE1261 VTE1262 VTE1281-1 VTE1281-2 VTE1281F VTE1281W-1 VTE1281W-2

    VTE1163

    Abstract: VTE1166 VTE1168
    Text: SbE D 3 D 3 D b P q 0 0 0 1 2 1 7 13a Bi VCT GaAIAs Infrared Em itting Diodes VTE1163 TO-46 Lensed Package — 880 nm T- MV- I3 E G & G VACT EC « PAC K AG E DIMENSIONS inch mm CA SE 24 DESCRIPTION TO-46 HERMETIC (LENSED) CHIP SIZE: .018- x .018- This narrow beam angle TO-46 hermetic emit­


    OCR Scan     		PDF VTE1163 018-X VTE1163 VTE1166 VTE1168

    H0A0872-n55

    Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
    Text: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1


    OCR Scan     		PDF 1N5722 1N5723 1N5724 1N5725 1N6264 1N6265 1N6266 2004-90xx 2600-70XX 2N5777-80 H0A0872-n55 H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12

    Untitled

    Abstract: No abstract text available
    Text: SbE D 3D 3 D b 0 q Ü G G 1 S 1 7 13fl * V C T GaAIAs Infrared Emitting Diodes V T E 1 1 6 3 , 66, 68 TO-46 Lensed Package — 880 nm T-41-I3 E G 8. G VACTE C PACKAGE DIMENSIONS inch mm til CASE 24 DESCRIPTION TO-46 HERMETIC (LENSED) CHIP SIZE:.01 S 'x .01 S'


    OCR Scan     		PDF T-41-I3 Coe11icient VTE1163 VTE1166 VTE1168