C1383 NPN transistor collector base and emitter
Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,
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C1383 NPN transistor collector base and emitter
NPN transistor c1383
C1383 transistor
C1383 NPN transistor
Light-Dependent Resistor specification
c1983 transistor
pin configuration of C1383 transistor
LHI968
lhi878
c1383
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Untitled
Abstract: No abstract text available
Text: GaAlAs Infrared Emitting Diodes VTE1261H, 1262H T-1¾ 5 mm Plastic Package — 880 nm PACKAGE DIMENSIONS inch (mm) CASE 26 T-1¾ (5 mm) CHIP SIZE: .018" x .018" DESCRIPTION This narrow beam angle 5 mm diameter plastic packaged emitter contains a large area, double wirebonded, GaAlAs, 880 nm, high
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VTE1261H,
1262H
VTE1261H
VTE1262H
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VTE1063
Abstract: VTE1163 VTE1261 VTE1262 VTE1281-1 VTE1281-2 VTE1281F VTE1281W-1 VTE1281W-2 VTE1285
Text: infrared emitting diodes Features 880 nm • Nine standard packages in hermetic and low-cost epoxy • End- and side-radiating packages • Graded Output • High efficiency GaAIAs, 880 nm LPE process Delivers twice the power of conventional GaAs 940 nm emitters
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VTE7172
VTE7173
VTE1013
VTE1113
VTE3322LA
VTE3324LA
VTE3372LA
VTE3374LA
VTE1063
VTE1163
VTE1261
VTE1262
VTE1281-1
VTE1281-2
VTE1281F
VTE1281W-1
VTE1281W-2
VTE1285
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VTE1261
Abstract: VTE1262 VTE1281-1 VTE1281-2
Text: GaAlAs Infrared Emitting Diodes VTE1261, 1262 T-1¾ 5 mm Plastic Package — 880 nm PACKAGE DIMENSIONS inch (mm) CASE 26 T-1¾ (5 mm) CHIP SIZE: .018" x .018" DESCRIPTION This narrow beam angle 5 mm diameter plastic packaged emitter contains a large area, double wirebonded, GaAlAs, 880 nm, high
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VTE1261,
VTE1281-1
VTE1281-2
VTE1261
VTE1262
VTE1281-1
VTE1281-2
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VTE1261H
Abstract: No abstract text available
Text: GaAlAs Infrared Emitting Diodes VTE1261H, 1262H T-1¾ 5 mm Plastic Package — 880 nm PACKAGE DIMENSIONS inch (mm) CASE 26 T-1¾ (5 mm) CHIP SIZE: .018" x .018" DESCRIPTION This narrow beam angle 5 mm diameter plastic packaged emitter contains a large area, double wirebonded, GaAlAs, 880 nm, high
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VTE1261H,
1262H
VTE1261H
VTE1262H
VTE1261H
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VTE1291-2
Abstract: VTE1063 VTE1163 VTE1261 VTE1262 VTE1281-1 VTE1281-2 VTE1281F VTE1281W-1 VTE1281W-2
Text: GaAlAs Infrared Emitting Diodes VTE1063 TO-46 Flat Window Package — 880 nm PACKAGE DIMENSIONS inch mm CASE 24 TO-46 HERMETIC (Flat Window) CHIP SIZE: .018" x .018" DESCRIPTION This wide beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAlAs, 880 nm, high efficiency IRED chip suitable for higher
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VTE1063
VTE7172
VTE7173
VTE1291-2
VTE1063
VTE1163
VTE1261
VTE1262
VTE1281-1
VTE1281-2
VTE1281F
VTE1281W-1
VTE1281W-2
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Untitled
Abstract: No abstract text available
Text: V SbE 3a3übOS 000122G GaAIAs Infrared Emitting Diodes VTE1261W, 1262W T-1 3/4 Plastic Package - 880 nm E G & G 7 22 H I V C T T -m VACTE C -i3 PACKAGE DIMENSIONS inch mm 1.00 ( 2 5 .4 ) .2 2 0 ( 5 .5 9 ) •OSO ( 1 .2 7 ) .2 6 (6 .6 ) .0 9 (2 .3 ) .0 3 0 ( 0 .7 6 ) "
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000122G
VTE1261W,
VTE1261W
VTE1262W
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H0A0872-n55
Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
Text: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1
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1N5722
1N5723
1N5724
1N5725
1N6264
1N6265
1N6266
2004-90xx
2600-70XX
2N5777-80
H0A0872-n55
H0A1405-1
H0A0865-L51
h0a1405
HOA708-1
HOA9
til78 phototransistor
MOC70T3
ir diode TIL38
H0A1874-12
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VTE1261
Abstract: VTE1262
Text: a o a o b o i □ D D 1 21 Û 074 • VCT 5bE D GaAIAs Infrared Emitting Diodes V T E 1 2 6 1 , 1262 T-1 3/4 Plastic Package — 880 nm -HI-13 G VACTEC P A C K A G E D IM E N S IO N S inch mm ( 2 5 .4 ) 1 .0 0 .2 4 0 ( 6 . 10 ) Plastic contour not controted in region
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VTE1261,
r-13/4
VTE1261
VTE1262
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Untitled
Abstract: No abstract text available
Text: aüaübDI D0D121A 07*4 • VCT SbE D GaAIAs Infrared Emitting Diodes VTE1261, 1262 T-1 3/4 Plastic Package — 880 nm '-MI-13 E G 8« G VACTEC PACKAGE DIMENSIONS inch mm i n n Ì95.4Ì iaa in i< ^ Plasöc contour noi controled in region of the leads. DESCRIPTION
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D0D121A
VTE1261,
-MI-13
VTE1261
VTE1262
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VTE1261W
Abstract: VTE1262W
Text: 5bE D 3030b[n Q001220 GaAIAs Infrared Emitting Diodes 752 • VCT VTE1261W , 1262W T-1 3/4 Plastic Package — 880 nm T - M I -I3 E G & G VACTEC PACKAGE DIMENSIONS inch mm ■OSO ( 1 . 2 7 ) 1 .0 0 ( 2 5 . 4 ) .2 4 0 ( 6 .J 0 ) M INIM UM .2 2 0 ( 5 .5 9 )
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3030b
Q001220
VTE1261W,
CASE26W
VTE1261W
VTE1262W
VTE1262W
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