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    VTE1063 Price and Stock

    Excelitas Technologies Corporation VTE1063H

    Ir Emitter, 880Nm, 4.78Mm, To-46, Though Hole; Viewing Angle:35°; Diode Case Style:To-46; Forward Current If(Av):100Ma; Forward Voltage Vf Max:2.8V; Rise Time:1Μs; Fall Time Tf:1Μs; Operating Temperature Min:-55°C; Product Range:- Rohs Compliant: Yes |Excelitas Tech VTE1063H
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    RS VTE1063H Bulk 3,942 15 Weeks 1
    • 1 $20.61
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    VTE1063 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    VTE1063 PerkinElmer Optoelectronics GaAlAs Infrared Emitting Diode Original PDF
    VTE1063 EG&G HIGH POWER GaAIAs INFRARED EMITTING DIODES 880 nm Scan PDF
    VTE1063 EG&G Vactec GaAlAs Infrared Emitting Diodes Scan PDF

    VTE1063 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: GaAlAs Infrared Emitting Diodes VTE1063H TO-46 Flat Window Package — 880 nm PACKAGE DIMENSIONS inch mm CASE 24 TO-46 HERMETIC (Flat Window) CHIP SIZE: .018" x .018" DESCRIPTION This wide beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAlAs, 880 nm, high efficiency IRED chip suitable for higher


    Original     		PDF VTE1063H

    VTe1063H

    Abstract: No abstract text available
    Text: GaAlAs Infrared Emitting Diodes VTE1063H TO-46 Flat Window Package — 880 nm PACKAGE DIMENSIONS inch mm CASE 24 TO-46 HERMETIC (Flat Window) CHIP SIZE: .018" x .018" DESCRIPTION This wide beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAlAs, 880 nm, high efficiency IRED chip suitable for higher


    Original     		PDF VTE1063H VTe1063H

    VTE1291-2

    Abstract: VTE1063 VTE1163 VTE1261 VTE1262 VTE1281-1 VTE1281-2 VTE1281F VTE1281W-1 VTE1281W-2
    Text: GaAlAs Infrared Emitting Diodes VTE1063 TO-46 Flat Window Package — 880 nm PACKAGE DIMENSIONS inch mm CASE 24 TO-46 HERMETIC (Flat Window) CHIP SIZE: .018" x .018" DESCRIPTION This wide beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAlAs, 880 nm, high efficiency IRED chip suitable for higher


    Original     		PDF VTE1063 VTE7172 VTE7173 VTE1291-2 VTE1063 VTE1163 VTE1261 VTE1262 VTE1281-1 VTE1281-2 VTE1281F VTE1281W-1 VTE1281W-2

    VTE1063

    Abstract: No abstract text available
    Text: GaAlAs Infrared Emitting Diodes VTE1063 TO-46 Flat Window Package — 880 nm PACKAGE DIMENSIONS inch mm CASE 24 TO-46 HERMETIC (Flat Window) CHIP SIZE: .018" x .018" DESCRIPTION This wide beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAlAs, 880 nm, high efficiency IRED chip suitable for higher


    Original     		PDF VTE1063 VTE1063

    C1383 NPN transistor collector base and emitter

    Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
    Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,


    Original     		PDF 10-foot C1383 NPN transistor collector base and emitter NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383

    VTE1063

    Abstract: VTE1163 VTE1261 VTE1262 VTE1281-1 VTE1281-2 VTE1281F VTE1281W-1 VTE1281W-2 VTE1285
    Text: infrared emitting diodes Features 880 nm • Nine standard packages in hermetic and low-cost epoxy • End- and side-radiating packages • Graded Output • High efficiency GaAIAs, 880 nm LPE process Delivers twice the power of conventional GaAs 940 nm emitters


    Original     		PDF VTE7172 VTE7173 VTE1013 VTE1113 VTE3322LA VTE3324LA VTE3372LA VTE3374LA VTE1063 VTE1163 VTE1261 VTE1262 VTE1281-1 VTE1281-2 VTE1281F VTE1281W-1 VTE1281W-2 VTE1285

    VTP1220FBH

    Abstract: VTS3082 VTB9412BH VTB1013B VTP1012H VTS3185H VTB8441BH VTD34H VTS3085H VTP4085H
    Text: 1745-2012:QuarkCatalogTempNew 9/17/12 5:02 PM Page 1745 20 Photodiodes, Phototransistors and IR Emitters RoHS Electrical/Optical Characteristics @ 25°C Stock No. Fig. Dark Current IO Shunt Resist. RSH Spectral Application Range H=100 fC 2850K A/W @ nm H=0


    Original     		PDF 2850K VTS3082H VTS3085H VTS3185H VTS3082H VTS3085H VTS3185H VTP1220FBH VTS3082 VTB9412BH VTB1013B VTP1012H VTB8441BH VTD34H VTP4085H

    Untitled

    Abstract: No abstract text available
    Text: SbE D 3030^ 0 0 0 1 2 1 b BT1 « V C T GaAIAs Infrared Emitting Diodes VTE1063, 66, 68 TO-46 Flat Window Package — 880 nm E 6 & G VACTEC PACKAGE DIMENSIONS inch mm .1 5 4 ( 3 .9 1 ) CASE 24A DESCRIPTION TO-46 HERMETIC (FLAT WINDOW) CHIP SIZE: .018-X.018'


    OCR Scan     		PDF VTE1063, 018-X 11econds VTE1063 VTE1068 VTE1066

    VTE1063

    Abstract: VTE1066 VTE1068
    Text: SbE D 3D 3 0 b C n 0 0 0 1 2 1 b ET1 B I V C T GaAIAs Infrared Emitting Diodes VTE1063, TO-46 Flat Window Package — 880 nm E G & G VACTEC PACKAGE DIMENSIONS inch mm CASE 2 « DESCRIPTION TO-46 HERMETIC (FLAT WINDOW) CHIP SIZE:.018-x .018' This wide beam angle TO-46 hermetic emitter


    OCR Scan     		PDF 000121b VTE1063, CASE24A VTE1063 VTE1066 VTE1068

    KT853

    Abstract: KT850 KT853A LTR-305D H0A0872-n55 H0A1405-1 h0a2001 MOC70T3 HOA708-1 smd diode 825B
    Text: Cross Reference Competition Honeywell P/N P/N 100 H 0A0871-N55 50B2-4204 CALL PHOTODIODES, T 0 1 8 T A LL PIN 101 HOA1872-12 BC TR AN S A S S Y . PTX 5082-4205 CALL PHOTODIODES. P P PIN 10501 H 0A 1872-1 BC TRAN S A S S Y , PTX 5082-4207 CALL PHOTODIODES. T 0 1 8 T A LL PIN


    OCR Scan     		PDF 1N5722 1N5723 1N5724 1N5725 1N6264 1N6265 1N6266 2004-90xx 3N24x 24xTX KT853 KT850 KT853A LTR-305D H0A0872-n55 H0A1405-1 h0a2001 MOC70T3 HOA708-1 smd diode 825B