D0-202AA
Abstract: No abstract text available
Text: Microsemi Corp. f The d*xte experts SANTA ANA, CA SCOTTSDALE, AZ / For more information call: 682 941-6300 FEATURES 1N5555 1N5556 1N5557 1N5558 TRANSIENT ABSORPTION • PROTECTS CIRCUITS FROM HARMFUL TRANSIENTS • ABSORBS TRANSIENTS UP TO 1500 WATTS FOR IM S
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1N5555
1N5556
1N5557
1N5558
DO-13
MIL-S-19500/500
D0-202AA
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x538
Abstract: MAX531BESD T variable resistor 727M
Text: 1 9 -01 72 : R ev 5 :1 0 /9 6 5V, Low-Power, Voltage-Output, Serial 12-Bit DACs T he M A X 538’s b u ffe r is fixed at a gain of 1 and the M AX539's bu ffer at a gain of 2. The M AX531’s internal op am p m ay be configured for a gain of 1 or 2, as well
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12-Bit
MAX531/MAX538/MAX539
MAX531
AX538/M
AX539
140pA,
MAX531
MAX538/MAX539
x538
MAX531BESD T
variable resistor 727M
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Untitled
Abstract: No abstract text available
Text: SbE D 3D 3 D b 0 q Ü G G 1 S 1 7 13fl * V C T GaAIAs Infrared Emitting Diodes V T E 1 1 6 3 , 66, 68 TO-46 Lensed Package — 880 nm T-41-I3 E G 8. G VACTE C PACKAGE DIMENSIONS inch mm til CASE 24 DESCRIPTION TO-46 HERMETIC (LENSED) CHIP SIZE:.01 S 'x .01 S'
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T-41-I3
Coe11icient
VTE1163
VTE1166
VTE1168
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