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    VN1210N5 Search Results

    VN1210N5 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    VN1210N5 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    VN1210N5 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    VN1210N5 Unknown FET Data Book Scan PDF
    VN1210N5 Supertex N-Channel Enhancement-Mode Vertical DMOS Power FETs Scan PDF

    VN1210N5 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    IRF-520 Mosfet

    Abstract: cell phone charger 3.7 VDC cost of logic pulser TN0520N3 IRF P CHANNEL MOSFET logic pulser cost pioneer mosfet VN1210N5 VN0220N3 5V to 240V relay ic
    Text: TN/TP Series Applications TN/TP Series Application Note AN–D2 3 Low-Threshold MOSFETs: Structure, Performance and Applications Punch-through is defined as the drain voltage needed to create an electric field connecting the drain and source, as shown in Figure


    Original     		PDF TN0524N3 IRF-520 Mosfet cell phone charger 3.7 VDC cost of logic pulser TN0520N3 IRF P CHANNEL MOSFET logic pulser cost pioneer mosfet VN1210N5 VN0220N3 5V to 240V relay ic

    ICM7555

    Abstract: TN0520N3 TN0524N3 TN0604N3 VN02 VN0220N3 VN1210N5 IRF P CHANNEL MOSFET
    Text: TN/TP Series Application Note AN–D2 3 Low-Threshold MOSFETs: Structure, Performance and Applications Punch-through is defined as the drain voltage needed to create an electric field connecting the drain and source, as shown in Figure 2, at voltages less than the actual BVDSS rating.


    Original     		PDF TN0524N3 ICM7555 TN0520N3 TN0524N3 TN0604N3 VN02 VN0220N3 VN1210N5 IRF P CHANNEL MOSFET

    VN1210N5

    Abstract: BR 115N sfn02202 sfn02802 sfn02812 RRF530
    Text: MOSFET Item Number Part Number Manufacturer V BR DSS loss Max Of) (A) rDs (on) (Ohms) Po Max (W) 9FS Min (S) V GS<tri) Max (V) Cin Max tr Max tf Max (P) (8) (8) T Opw Max Package Style (°C) MOSFETs, N-Channel Enhancement-Type (Cont'd) . . . . 5 • . . .10


    Original     		PDF RRF120 RRF520 UFN132 IRrj120 RRF522 SFN02802 SFN02812 SFN106A3 YTF520 IRF120 VN1210N5 BR 115N sfn02202 RRF530

    Untitled

    Abstract: No abstract text available
    Text: SU PE R T E X INC blE D • fl7732tlS a ü G 3 1 Ô M 'iS'î « S T X VN12A f f i S u p e r t e x in c . N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices / Order Number / Package R DS ON BVdgs (max) If BV nss


    OCR Scan     		PDF fl7732t VN12A VN1204N2 VN1206N2 VN1210N2 O-220 VN1204N5 VN1206N5 VN1210N5 VN1204ND

    Cross Reference power MOSFET

    Abstract: irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630
    Text: FAIRCH ILD Power Products Data Book FA IR C H ILD Power Data Book A S chlum berger C om pany 1 9 86/8 7 Power and Discrete Division 1986 Fairchild Semiconductor Corporation Power and Discrete Division 4300 Redwood Highway, San Rafael, CA 94903 415 479-8000 TWX 910-384-4258


    OCR Scan     		PDF T0-204AA T0-204AE T0-220AB T0-220AC Cross Reference power MOSFET irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630

    vn1210 transistor

    Abstract: VN1204N1 VN1204N2 VN1204N5 VN1204ND VN1206N1 VN1206N2 VN1206N5 VN1206ND VN1210N1
    Text: 8773295 SUPERTEX □1 INC De | û 7 7 3 5 cI 5 DDDlbSD 1 T- ì f - f i N-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information Order Number / Package BVoss/ ^OS<ON *D ON) b v ms (max) (min) TO-220 Dice 40V 0.30 20A VN1204N1 VN1204N2 VN1204N5


    OCR Scan     		PDF O-220 VN1204N1 VN1204N2 VN1204N5 VN1204ND VN1206N1 VN1206N2 VN1206N5 VN1206ND VN1210N1 vn1210 transistor VN1204ND VN1206ND

    Untitled

    Abstract: No abstract text available
    Text: ^ Supertex in c . VN12A N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices Order Number / Package BVpss ! BV dqs ^DS ON *D(ON) (max) (min) TO-39 TO-220 Dice* 40V 0.3Q 20A VN1204N2 VN1204N5 VN1204ND 60V 0 .3 0 20A


    OCR Scan     		PDF VN12A VN1204N2 VN1206N2 VN1210N2 O-220 VN1204N5 VN1206N5 VN1210N5 VN1204ND VN1206ND

    VN1210N2

    Abstract: vn1204n2
    Text: 8773295 SÜPERTEX Dl INC DE 1 0 7 7 3 2 ^ 5 O O O l b S O 1 N-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information p D S {O N * 0 0 N) (max) (min) o.3n 20A 60V 0.3Q 100V 0.3Î2 ^DG S 40V Order Number / Package TO-39 TO-220 Dice VN1204N1


    OCR Scan     		PDF VN1204N1 VN1206N1 VN1210N1 VN1204N2 VN1206N2 VN1210N2 O-220 VN1204N5 VN1206N5 VN1210N5

    IRF740 "direct replacement"

    Abstract: irf9640 REPLACEMENT GUIDE IRF9540 replacement IRF640 irf510 2Sk350 HITACHI IRF9613 rca9213a buz11 cross reference sgsp467 fu120
    Text: CROSS REFERENCE GUIDE POWER MOSFETs Inter­ national Rectifier SAMSUNG Direct Replace­ ment Inter­ national Rectifier SAMSUNG Direct Replace­ ment Inter­ national Rectifier SAMSUNG Direct Replace­ ment Inter­ national Rectifier SAMSUNG Direct Replace­


    OCR Scan     		PDF IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRF610 IRF611 IRF740 "direct replacement" irf9640 REPLACEMENT GUIDE IRF9540 replacement IRF640 irf510 2Sk350 HITACHI IRF9613 rca9213a buz11 cross reference sgsp467 fu120