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    VDGR TEST CIRCUIT Search Results

    VDGR TEST CIRCUIT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP2701 Toshiba Electronic Devices & Storage Corporation Photocoupler (photo-IC output), 5000 Vrms, 4pin SO6L Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NA Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, WSON10B Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NL Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Latch, WSON10B Visit Toshiba Electronic Devices & Storage Corporation

    VDGR TEST CIRCUIT Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    diode AR S1 99

    Abstract: S3 DIODE schottky 486 smps
    Text: Advanced Technical Information Parallel, Buck & Boost Configurations for SMPS, PFC & Motor Control Circuits S1 HiPerFET MOSFET Diode Test Conditions VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 100 V VGS Continuous ±20 V Transient


    Original     		100N10S1 100N10S2 100N10S3 diode AR S1 99 S3 DIODE schottky 486 smps PDF

    1N450

    Abstract: IXTF1N450
    Text: Advance Technical Information IXTF1N450 High Voltage Power MOSFET VDSS ID25 RDS on = 4500V = 0.9A Ω ≤ 85Ω (Electrically Isolated Tab) ISOPLUS i4-PakTM N-Channel Enhancement Mode Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 4500 V VDGR


    Original     		IXTF1N450 50/60Hz, 1N450 IXTF1N450 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information High Voltage Power MOSFET VDSS = 2500V ID25 = 1A Ω RDS on ≤ 40Ω IXTF1N250 N-Channel Enhancement Mode (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 2500 V VDGR


    Original     		IXTF1N250 500mA 1N250 12-17-09-B PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXTT6N150 IXTH6N150 High Voltage Power MOSFETs VDSS ID25 1500V 6A 3.5Ω RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268 (IXTT) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 1500 V VDGR


    Original     		IXTT6N150 IXTH6N150 O-268 O-247 6N150 PDF

    Untitled

    Abstract: No abstract text available
    Text: PolarTM HiPerFETTM Power MOSFET VDSS ID25 IXFN26N120P = = RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1200V 23A Ω 500mΩ 300ns miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		IXFN26N120P 300ns E153432 26N120P 10-24-11-C PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXTA20N65X IXTP20N65X IXTH20N65X X-Class Power MOSFET VDSS ID25 RDS on = 650V = 20A  210m  N-Channel Enhancement Mode TO-263 (IXTA) G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 650 V VDGR


    Original     		IXTA20N65X IXTP20N65X IXTH20N65X O-263 O-220 O-247 20N65X PDF

    Z 728

    Abstract: No abstract text available
    Text: OBSOLETE IXFK30N110P IXFX30N110P PolarTM HiPerFETTM Power MOSFET VDSS ID25 = = 1100V 30A Ω 360mΩ 300ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		IXFK30N110P IXFX30N110P O-264 30N110P 4-01-08-A Z 728 PDF

    Untitled

    Abstract: No abstract text available
    Text: OBSOLETE IXFN36N110P PolarTM HiPerFETTM Power MOSFET VDSS = ID25 = RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ VGSS


    Original     		50/60Hz, IXFN36N110P 300ns 36N110P 4-01-08-A PDF

    Untitled

    Abstract: No abstract text available
    Text: IXFN26N120P PolarTM HiPerFETTM Power MOSFET VDSS ID25 = = RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1200V 23A Ω 500mΩ 300ns miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		IXFN26N120P E153432 300ns 26N120P 10-24-11-C PDF

    26N120P

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFR26N120P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXFR26N120P 300ns ISOPLUS247 E153432 26N120P 1-07-A PDF

    02N450

    Abstract: IXTA02N450HV IXTT02N450HV 02n45 02n4 ixtt02n450
    Text: Advance Technical Information IXTA02N450HV IXTT02N450HV High Voltage Power MOSFETs VDSS ID25 RDS on = 4500V = 200mA Ω ≤ 750Ω N-Channel Enhancement Mode TO-263 (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 4500 V VDGR


    Original     		IXTA02N450HV IXTT02N450HV 200mA O-263 O-263) O-263 O-268 O-268 02N450 IXTT02N450HV 02n45 02n4 ixtt02n450 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFR20N120P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXFR20N120P 300ns ISOPLUS247 E153432 20N120P 1-07-A PDF

    30N120P

    Abstract: mosfet IXFB 30N120P IXFB30N120P nf950
    Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFB30N120P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXFB30N120P 300ns PLUS264TM 30N120P 1-07-A mosfet IXFB 30N120P IXFB30N120P nf950 PDF

    IXFK20N120P

    Abstract: IXFX20N120P IXFX20N120 IXFK20N120 PLUS247 DS99854B
    Text: PolarTM Power MOSFET HiPerFETTM IXFK20N120P IXFX20N120P VDSS ID25 = 1200V = 20A Ω ≤ 570mΩ ≤ 300ns RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode trr TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		IXFK20N120P IXFX20N120P 300ns O-264 20N120P 04-03-08-B IXFK20N120P IXFX20N120P IXFX20N120 IXFK20N120 PLUS247 DS99854B PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFR30N110P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXFR30N110P 300ns ISOPLUS247 E153432 30N110P PDF

    IXFX30N110P

    Abstract: PLUS247 ixfk 30N110P
    Text: IXFK30N110P IXFX30N110P PolarTM Power MOSFET HiPerFETTM VDSS ID25 = = 1100V 30A Ω 360mΩ 300ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		IXFK30N110P IXFX30N110P 300ns O-264 30N110P 4-01-08-A IXFX30N110P PLUS247 ixfk 30N110P PDF

    Untitled

    Abstract: No abstract text available
    Text: High Voltage Power MOSFETs w/ Extended FBSOA VDSS ID25 IXTK20N150 IXTX20N150 = 1500V = 20A Ω < 1Ω RDS on N-Channel Enhancement Mode Avalanche Rated Guaranteed FBSOA TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR


    Original     		IXTK20N150 IXTX20N150 O-264 100ms 20N150 PDF

    Untitled

    Abstract: No abstract text available
    Text: PolarTM HiPerFETTM Power MOSFETs VDSS ID25 IXFK26N120P IXFX26N120P = = 1200V 26A Ω 500mΩ 300ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		IXFK26N120P IXFX26N120P 300ns O-264 26N120P 10-24-11-C PDF

    20N150

    Abstract: IXTK20N150 432 - 070
    Text: IXTK20N150 IXTX20N150 High Voltage Power MOSFETs w/ Extended FBSOA VDSS ID25 = 1500V = 20A Ω < 1Ω RDS on N-Channel Enhancement Mode Avalanche Rated Guaranteed FBSOA TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR


    Original     		IXTK20N150 IXTX20N150 O-264 O-264) O-264 PLUS247 PLUS247) 100ms 100ms 20N150 432 - 070 PDF

    IXFX26N120P

    Abstract: PLUS247 26N120P ixfx26n120 IXFK26N120P ixfk26n120 2030g
    Text: PolarTM Power MOSFET HiPerFETTM IXFK26N120P IXFX26N120P VDSS ID25 = 1200V = 26A Ω ≤ 460mΩ ≤ 300ns RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		IXFK26N120P IXFX26N120P 300ns O-264 26N120P 3-28-08-B IXFX26N120P PLUS247 ixfx26n120 IXFK26N120P ixfk26n120 2030g PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXFR16N120P PolarTM Power MOSFET HiPerFETTM VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXFR16N120P ISOPLUS247 E153432 300ns 16N120P PDF

    Untitled

    Abstract: No abstract text available
    Text: VDSS ID25 IXFR16N120P PolarTM Power MOSFET HiPerFETTM RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1200 V VGSS Continuous


    Original     		IXFR16N120P 300ns ISOPLUS247 E153432 16N120P 4-03-08-A PDF

    40n110p

    Abstract: IXFN40 IXFN40N110P
    Text: IXFN40N110P PolarTM Power MOSFET HiPerFETTM VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1100 V VGSS Continuous


    Original     		IXFN40N110P 300ns OT-227 E153432 40N110P 3-28-08-A IXFN40 IXFN40N110P PDF

    30N110P

    Abstract: ISOPLUS247 IXFR30N110P
    Text: PolarTM Power MOSFET HiPerFETTM IXFR30N110P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1100 V VGSS Continuous


    Original     		IXFR30N110P ISOPLUS247 E153432 300ns 30N110P 4-01-08-A ISOPLUS247 IXFR30N110P PDF