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    VDGR TEST CIRCUIT Search Results

    VDGR TEST CIRCUIT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP2701 Toshiba Electronic Devices & Storage Corporation Photocoupler (photo-IC output), 5000 Vrms, 4pin SO6L Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NA Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, WSON10B Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NL Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Latch, WSON10B Visit Toshiba Electronic Devices & Storage Corporation

    VDGR TEST CIRCUIT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    diode AR S1 99

    Abstract: S3 DIODE schottky 486 smps
    Text: Advanced Technical Information Parallel, Buck & Boost Configurations for SMPS, PFC & Motor Control Circuits S1 HiPerFET MOSFET Diode Test Conditions VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 100 V VGS Continuous ±20 V Transient


    Original     		PDF 100N10S1 100N10S2 100N10S3 diode AR S1 99 S3 DIODE schottky 486 smps

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information High Voltage Power MOSFET VDSS = 2500V ID25 = 1A Ω RDS on ≤ 40Ω IXTF1N250 N-Channel Enhancement Mode (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 2500 V VDGR


    Original     		PDF IXTF1N250 500mA 1N250 12-17-09-B

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXTT6N150 IXTH6N150 High Voltage Power MOSFETs VDSS ID25 1500V 6A 3.5Ω RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268 (IXTT) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 1500 V VDGR


    Original     		PDF IXTT6N150 IXTH6N150 O-268 O-247 6N150

    Untitled

    Abstract: No abstract text available
    Text: PolarTM HiPerFETTM Power MOSFET VDSS ID25 IXFN26N120P = = RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1200V 23A Ω 500mΩ 300ns miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF IXFN26N120P 300ns E153432 26N120P 10-24-11-C

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFR20N120P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXFR20N120P 300ns ISOPLUS247 E153432 20N120P 1-07-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFR30N110P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXFR30N110P 300ns ISOPLUS247 E153432 30N110P

    Untitled

    Abstract: No abstract text available
    Text: PolarTM HiPerFETTM Power MOSFETs VDSS ID25 IXFK26N120P IXFX26N120P = = 1200V 26A Ω 500mΩ 300ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF IXFK26N120P IXFX26N120P 300ns O-264 26N120P 10-24-11-C

    20N150

    Abstract: IXTK20N150 432 - 070
    Text: IXTK20N150 IXTX20N150 High Voltage Power MOSFETs w/ Extended FBSOA VDSS ID25 = 1500V = 20A Ω < 1Ω RDS on N-Channel Enhancement Mode Avalanche Rated Guaranteed FBSOA TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR


    Original     		PDF IXTK20N150 IXTX20N150 O-264 O-264) O-264 PLUS247 PLUS247) 100ms 100ms 20N150 432 - 070

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXFR16N120P PolarTM Power MOSFET HiPerFETTM VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXFR16N120P ISOPLUS247 E153432 300ns 16N120P

    Untitled

    Abstract: No abstract text available
    Text: VDSS ID25 IXFR16N120P PolarTM Power MOSFET HiPerFETTM RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1200 V VGSS Continuous


    Original     		PDF IXFR16N120P 300ns ISOPLUS247 E153432 16N120P 4-03-08-A

    IXYS 1210

    Abstract: No abstract text available
    Text: Advance Technical Information PolarTM Power MOSFET HiPerFETTM IXFL36N100P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions VDSS TJ = 25°C to 150°C 1100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1100 V VGSS


    Original     		PDF IXFL36N100P 300ns 300hnical 338B2 IXYS 1210

    Untitled

    Abstract: No abstract text available
    Text: VDSS ID25 IXFN40N110P PolarTM Power MOSFET HiPerFETTM RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1100 V VGSS Continuous


    Original     		PDF IXFN40N110P 300ns OT-227 E153432 40N110P 3-28-08-A

    Untitled

    Abstract: No abstract text available
    Text: PolarTM Power MOSFET HiPerFETTM IXFK20N120P IXFX20N120P VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode trr TO-264 (IXFK) Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 1200 1200 V V


    Original     		PDF IXFK20N120P IXFX20N120P 300ns O-264 20N120P 04-03-08-B

    IXTH03N400

    Abstract: IXTV03N400S PLUS220SMD 03N400
    Text: Advance Technical Information IXTH03N400 IXTV03N400S High Voltage Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 4000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 4000 V VGSS Continuous


    Original     		PDF IXTH03N400 IXTV03N400S 300mA O-247 03N400 IXTH03N400 IXTV03N400S PLUS220SMD

    IXTH4N150

    Abstract: 4n150
    Text: IXTH4N150 High Voltage Power MOSFET VDSS ID25 = = RDS on ≤ 1500V 4A 6Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTH4N150 O-247 100ms 4N150 0-26-10-A IXTH4N150

    IXTH110N10L2

    Abstract: IXTT110N10L2 110N10L2 A18M
    Text: Advance Technical Information IXTH110N10L2 IXTT110N10L2 LinearL2TM Power MOSFET w/ Extended FBSOA VDSS ID25 RDS on N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated TO-247 (IXTH) Symbol Test Conditions VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTH110N10L2 IXTT110N10L2 O-247 063in) 100ms 110N10L2 IXTH110N10L2 IXTT110N10L2 A18M

    IXTA06N120P

    Abstract: No abstract text available
    Text: PolarTM Power MOSFET IXTA06N120P IXTP06N120P VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 1200V = 0.6A ≤ 32Ω Ω TO-263 (IXTA) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTA06N120P IXTP06N120P O-263 06N120P 04-02-08-B IXTA06N120P

    T1N400

    Abstract: IXTF1N400 1N400 diode diode 1n400 IXTF1N
    Text: IXTF1N400 High Voltage Power MOSFET VDSS ID25 = 4000V = 1A Ω ≤ 60Ω RDS on (Electrically Isolated Tab) N-Channel Enhancement Mode ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 4000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTF1N400 50/60Hz, 1N400 5-09-A T1N400 IXTF1N400 1N400 diode diode 1n400 IXTF1N

    IXTH4N150

    Abstract: No abstract text available
    Text: High Voltage Power MOSFET VDSS ID25 IXTH4N150 = = RDS on ≤ 1500V 4A 6Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTH4N150 O-247 100ms 4N150 0-26-10-A IXTH4N150

    Untitled

    Abstract: No abstract text available
    Text: PolarTM Power MOSFET IXTA08N120P IXTP08N120P VDSS ID25 RDS on = 1200V = 0.8A Ω ≤ 25Ω N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTA08N120P IXTP08N120P O-263 08N120P 2-08-A

    IXTF1N400

    Abstract: No abstract text available
    Text: IXTF1N400 High Voltage Power MOSFET VDSS ID25 = 4000V = 1A Ω ≤ 60Ω RDS on (Electrically Isolated Tab) N-Channel Enhancement Mode ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 90°C 4000 V VDGR TJ = 25°C to 90°C, RGS = 1MΩ


    Original     		PDF IXTF1N400 1N400 5-09-A IXTF1N400

    13.56mhz c class amp

    Abstract: ferrite core binocular air variable capacitor mp850 25.0 DE275-102N06A
    Text: DE275-102N06A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient


    Original     		PDF DE275-102N06A 102N06A 13.56mhz c class amp ferrite core binocular air variable capacitor mp850 25.0 DE275-102N06A

    IXTL2N450

    Abstract: 2N450
    Text: High Voltage Power MOSFET VDSS ID25 IXTL2N450 RDS on (Electrically Isolated Tab) = 4500V = 2A   20 ISOPLUS i5-PakTM N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 4500 V VDGR TJ = 25C to 150C, RGS = 1M


    Original     		PDF IXTL2N450 100ms 2N450 H9-P640) IXTL2N450

    IXTH1N250

    Abstract: No abstract text available
    Text: High Voltage Power MOSFET VDSS ID25 IXTH1N250 RDS on = 2500V = 1.5A Ω ≤ 40Ω N-Channel Enhancement Mode Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 2500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 2500 V VGSS


    Original     		PDF IXTH1N250 O-247 100ms 1N250 10-25-10-D IXTH1N250