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    IXFX26N120P Search Results

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    IXFX26N120P Price and Stock

    Littelfuse Inc IXFX26N120P

    MOSFET N-CH 1200V 26A PLUS247-3
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    DigiKey IXFX26N120P Tube 300
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    Newark IXFX26N120P Bulk 300
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    IXYS Corporation IXFX26N120P

    MOSFETs 32 Amps 1200V 0.46 Rds
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    Mouser Electronics IXFX26N120P 282
    • 1 $33.89
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    • 100 $26.7
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    Future Electronics IXFX26N120P Tube 300
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    Bristol Electronics IXFX26N120P 4
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    TTI IXFX26N120P Tube 300
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    TME IXFX26N120P 1
    • 1 $39.07
    • 10 $31.07
    • 100 $27.95
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    IXYS Integrated Circuits Division IXFX26N120P

    MOSFET DIS.26A 1200V N-CH PLUS247 HIPERFET THT
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    Ozdisan Elektronik IXFX26N120P
    • 1 $42.39319
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    • 100 $39.6198
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    IXFX26N120P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFX26N120P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 26A PLUS247 Original PDF

    IXFX26N120P Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    26n120

    Abstract: ixfx26n120 ixfx26N120P 26N120P PLUS247 220ID 26N12
    Text: Preliminary Technical Information PolarTM Power MOSFET IXFK26N120P IXFX26N120P HiPerFETTM VDSS ID25 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode trr = 1200V = 26A Ω ≤ 460mΩ ≤ 300ns RDS on TO-264 (IXFK) Symbol Test Conditions Maximum Ratings


    Original
    IXFK26N120P IXFX26N120P 300ns O-264 26N120P 26n120 ixfx26n120 ixfx26N120P PLUS247 220ID 26N12 PDF

    Untitled

    Abstract: No abstract text available
    Text: PolarTM HiPerFETTM Power MOSFETs VDSS ID25 IXFK26N120P IXFX26N120P = = 1200V 26A Ω 500mΩ 300ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original
    IXFK26N120P IXFX26N120P 300ns O-264 26N120P 10-24-11-C PDF

    IXFX26N120P

    Abstract: PLUS247 26N120P ixfx26n120 IXFK26N120P ixfk26n120 2030g
    Text: PolarTM Power MOSFET HiPerFETTM IXFK26N120P IXFX26N120P VDSS ID25 = 1200V = 26A Ω ≤ 460mΩ ≤ 300ns RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original
    IXFK26N120P IXFX26N120P 300ns O-264 26N120P 3-28-08-B IXFX26N120P PLUS247 ixfx26n120 IXFK26N120P ixfk26n120 2030g PDF

    IXFK26N120P

    Abstract: IXFX26N120P
    Text: IXFK26N120P IXFX26N120P PolarTM HiPerFETTM Power MOSFETs VDSS ID25 = = 1200V 26A Ω 500mΩ 300ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original
    IXFK26N120P IXFX26N120P O-264 300ns PLUS247 26N120P 10-24-11-C IXFX26N120P PDF