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    IXFR16N120P Search Results

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    IXFR16N120P Price and Stock

    Littelfuse Inc IXFR16N120P

    MOSFET N-CH 1200V 9A ISOPLUS247
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    DigiKey IXFR16N120P Tube 300
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    Newark IXFR16N120P Bulk 300
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    RS IXFR16N120P Bulk 8 Weeks 30
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    IXYS Corporation IXFR16N120P

    MOSFETs 16 Amps 1200V 1 Rds
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    Mouser Electronics IXFR16N120P
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    Future Electronics IXFR16N120P Tube 26 Weeks 30
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    TTI IXFR16N120P Tube 300
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    TME IXFR16N120P 10 1
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    IXFR16N120P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFR16N120P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 9A ISOPLUS247 Original PDF

    IXFR16N120P Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: IXFR16N120P PolarTM HiperFETTM Power MOSFET VDSS ID25 RDS on trr (Electrically Isolated Tab) = = ≤ ≤ 1200V 9A Ω 1.04Ω 300ns N-Channel Enhancement Mode Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		IXFR16N120P 300ns ISOPLUS247 E153432 16N120P 9-12-12-B PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXFR16N120P PolarTM Power MOSFET HiPerFETTM VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXFR16N120P ISOPLUS247 E153432 300ns 16N120P PDF

    Untitled

    Abstract: No abstract text available
    Text: VDSS ID25 IXFR16N120P PolarTM Power MOSFET HiPerFETTM RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1200 V VGSS Continuous


    Original     		IXFR16N120P 300ns ISOPLUS247 E153432 16N120P 4-03-08-A PDF

    ISOPLUS247

    Abstract: IXFR16N120P 16N120P N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A
    Text: IXFR16N120P PolarTM Power MOSFET HiPerFETTM VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1200 V VGSS Continuous


    Original     		IXFR16N120P ISOPLUS247 E153432 300ns 16N120P 4-03-08-A ISOPLUS247 IXFR16N120P N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A PDF

    1200 volt mosfet

    Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P
    Text: IXYS POWER Efficiency through Technology NE W P R O D UCT B R I E F 1000V to 1200V Polar Standard and HiPerFET Power MOSFETs NEXT GENERATION N-CHANNEL POWER MOSFETS OCTOBER 2007 OVERVIEW These new 1000-1200V Standard and HiPerFETTM additions to the IXYS PolarTM Power MOSFET


    Original     		000-1200V IXFB30N120P IXFL30N120P IXFN30N120P IXFL32N120P IXFN32N120P PluS220 IXFV110N10PS 1200 volt mosfet 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P PDF