Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IXTT6N150 Search Results

    SF Impression Pixel

    IXTT6N150 Price and Stock

    IXYS Corporation IXTT6N150

    Transistor: N-MOSFET; unipolar; 1.5kV; 6A; 540W; TO268; 1.5us
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME IXTT6N150 1
    • 1 $11.7
    • 10 $9.31
    • 100 $8.36
    • 1000 $8.36
    • 10000 $8.36
    		Get Quote

    IXTT6N150 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: High Voltage Power MOSFETs VDSS ID25 IXTT6N150 IXTH6N150 1500V 6A 3.5Ω RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268 (IXTT) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTT6N150 IXTH6N150 O-268 6N150

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXTT6N150 IXTH6N150 High Voltage Power MOSFETs VDSS ID25 1500V 6A 3.5Ω RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268 (IXTT) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 1500 V VDGR


    Original     		PDF IXTT6N150 IXTH6N150 O-268 O-247 6N150

    IXTT6N150

    Abstract: No abstract text available
    Text: IXTT6N150 IXTH6N150 High Voltage Power MOSFETs VDSS ID25 1500V 6A 3.5Ω RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268 (IXTT) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTT6N150 IXTH6N150 O-268 O-247 6N150