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    IXTH6N150 Search Results

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    IXTH6N150 Price and Stock

    Littelfuse Inc IXTH6N150

    MOSFET N-CH 1500V 6A TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTH6N150 Tube 1
    • 1 $13.42
    • 10 $13.42
    • 100 $8.14167
    • 1000 $6.756
    • 10000 $6.756
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    Newark IXTH6N150 Bulk 300
    • 1 -
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    • 100 -
    • 1000 $7.08
    • 10000 $7.08
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    IXYS Corporation IXTH6N150

    MOSFETs HIGH VOLT PWR MOSFET 1500V 6A
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    Mouser Electronics IXTH6N150 165
    • 1 $11.66
    • 10 $11.61
    • 100 $7.48
    • 1000 $6.75
    • 10000 $6.75
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    Future Electronics IXTH6N150 Tube 600
    • 1 -
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    • 100 $6.74
    • 1000 $6.63
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    TTI IXTH6N150 Tube 300
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    • 100 -
    • 1000 $6.76
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    TME IXTH6N150 1
    • 1 $11.69
    • 10 $9.27
    • 100 $8.32
    • 1000 $8.32
    • 10000 $8.32
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    New Advantage Corporation IXTH6N150 478 1
    • 1 -
    • 10 -
    • 100 $17.18
    • 1000 $16.04
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    IXYS Integrated Circuits Division IXTH6N150

    MOSFET DIS.6A 1500V N-CH TO247-3 H.VOLTAGE THT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik IXTH6N150 578
    • 1 $12.51558
    • 10 $12.51558
    • 100 $11.6968
    • 1000 $11.6968
    • 10000 $11.6968
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    IXTH6N150 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTH6N150 IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1500V 6A TO-247 Original PDF

    IXTH6N150 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: High Voltage Power MOSFETs VDSS ID25 IXTT6N150 IXTH6N150 1500V 6A 3.5Ω RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268 (IXTT) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTT6N150 IXTH6N150 O-268 6N150

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXTT6N150 IXTH6N150 High Voltage Power MOSFETs VDSS ID25 1500V 6A 3.5Ω RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268 (IXTT) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 1500 V VDGR


    Original     		PDF IXTT6N150 IXTH6N150 O-268 O-247 6N150

    IXTH6N150

    Abstract: 6n150
    Text: Advance Technical Information IXTH6N150 High Voltage Power MOSFET VDSS ID25 = = RDS on ≤ 1500V 6A 3.5Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTH6N150 O-247 6N150 IXTH6N150 6n150

    IXTT6N150

    Abstract: No abstract text available
    Text: IXTT6N150 IXTH6N150 High Voltage Power MOSFETs VDSS ID25 1500V 6A 3.5Ω RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268 (IXTT) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTT6N150 IXTH6N150 O-268 O-247 6N150