NPN VCEO 800V
Abstract: pnp 1000V 2A PNP Vceo 500V 2A 40V NPN NPN VCEo 1000V 1000v, NPN 800V PNP 1000v 5A npn
Text: Search Results Part number search for devices beginning "2N4939" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD 2N4939 PNP TO79 40V 0.05A 50 - 10/1m 300MHz
|
Original
|
PDF
|
2N4939"
2N4939
2N4939DCSM
10/1m
300MHz
2N5001"
2N5001
2N5001S
NPN VCEO 800V
pnp 1000V 2A
PNP Vceo 500V
2A 40V NPN
NPN VCEo 1000V
1000v, NPN
800V PNP
1000v 5A npn
|
2SA1831
Abstract: No abstract text available
Text: Ordering number:EN3686A PNPTriple Diffused Planar Silicon Transistors 2SA1831 High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions • High breakdown voltage VCEO min=–800V . · Small Cob (Cob typ=1.6pF). · High reliabirity (Adoption of HVP processes).
|
Original
|
PDF
|
EN3686A
2SA1831
2010B
2SA1831]
O-220AB
SC-46
2SA1831
|
800V PNP
Abstract: BUL52B pnp 400v 2A
Text: SavantIC Semiconductor Product Specification BUL52B Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·High voltage ·Fast switching ·High energy rating APPLICATIONS ·Designed for use in electronic ballast applications PINNING PIN DESCRIPTION
|
Original
|
PDF
|
BUL52B
O-220C
800V PNP
BUL52B
pnp 400v 2A
|
BUL52B
Abstract: pnp 400v 2A pnp 400V 3A
Text: Inchange Semiconductor Product Specification BUL52B Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・High voltage ・Fast switching ・High energy rating APPLICATIONS ・Designed for use in electronic ballast applications PINNING PIN
|
Original
|
PDF
|
BUL52B
O-220C
BUL52B
pnp 400v 2A
pnp 400V 3A
|
2SA1831
Abstract: ITR04846 ITR04847 ITR04848 ITR04849 ITR04850 PNP transistor 800v 0,1
Text: Ordering number:ENN3686A PNP Triple Diffused Planar Silicon Transistor 2SA1831 High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions • High breakdown voltage VCEO min=–800V . · Small Cob (Cob typ=1.6pF). · High reliabirity (Adoption of HVP processes).
|
Original
|
PDF
|
ENN3686A
2SA1831
2010C
2SA1831]
O220AB
2SA1831
ITR04846
ITR04847
ITR04848
ITR04849
ITR04850
PNP transistor 800v 0,1
|
pnp transistor 800v
Abstract: 2SA1831 ITR04846 ITR04847 ITR04848 ITR04849 ITR04850 5201m
Text: Ordering number:ENN3686A PNP Triple Diffused Planar Silicon Transistor 2SA1831 High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions • High breakdown voltage VCEO min=–800V . · Small Cob (Cob typ=1.6pF). · High reliabirity (Adoption of HVP processes).
|
Original
|
PDF
|
ENN3686A
2SA1831
2010C
2SA1831]
O220AB
pnp transistor 800v
2SA1831
ITR04846
ITR04847
ITR04848
ITR04849
ITR04850
5201m
|
transistor 2sc5353
Abstract: 2sa2035 TRANSISTOR SMD 13W HA2003 Bjt 60 w 600v .5A pnp transistor 800v TPC6D02 VS6 SOT23 400V dvc to 5V DC Regulator MSTM TOSHIBA
Text: Bipolar Power Transistor Dec, 2003 TOSHIBA Semiconductor Company Discrete Semiconductor Division 2003 Dec DP0540001_02 1/29 Application Application Map Map of of Low Low VCE sat VCE(sat) BJT BJT Process Standard Standard Feature High hFE Hi-Met 3rd NPN 400 to 1000
|
Original
|
PDF
|
DP0540001
200kHz
200kHz
280ns
transistor 2sc5353
2sa2035
TRANSISTOR SMD 13W
HA2003
Bjt 60 w 600v .5A
pnp transistor 800v
TPC6D02
VS6 SOT23
400V dvc to 5V DC Regulator
MSTM TOSHIBA
|
Diode 400V 5A
Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM
|
Original
|
PDF
|
2C415
2C425
2C444
2C746
2N1131L
2N1132
2N1132CSM
2N1132DCSM
2N1208
2N1209
Diode 400V 5A
lm1083
BZY55C
transistor 2n1208
bc109 spice
IRF9024
CV7404
mnt6337j
sml1258
SML1004RGN
|
2A 40V NPN
Abstract: 150v 3A pnp BSW68A bu326
Text: Search Results Part number search for devices beginning "BSS71" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD BSS71 NPN TO18 200V 0.5A 40 250 10/30m 50MHz
|
Original
|
PDF
|
BSS71"
BSS71
BSS71CSM
BSS71CSM-JQR-B
BSS71DCSM
BSS71DCSM-JQR-B
10/30m
2A 40V NPN
150v 3A pnp
BSW68A
bu326
|
Untitled
Abstract: No abstract text available
Text: DIO 4468 Why Diodes - Bipolar2 final _- 09/10/2014 01:12 Page 1 WHY DIODES – BIPOLAR2 Why DIODES? Bipolar Transistors World Class Performance Broad Portfolio to Cover Application Needs Bipolar Advantages Technology Full turn-on with low VBE < 1V allows switching
|
Original
|
PDF
|
DFN0606
De00V
O251/2;
OT223
|
TT2140
Abstract: transistor TT2140 TT2190 transistor horizontal TT2190 TT2170 TT2190 DATASHEET tt2140 equivalent tt2170 equivalent 2sd2689 inverter transistor TT2140
Text: Ordering number: EP106A Discrete Devices for Video Equipment '04-08 TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Telephone: 81- 0 3-3837-6339, 6340, 6342, Facsimile: 81-(0)3-3837-6377 ●SANYO Electric Co.,Ltd. Semiconductor company Homepage
|
Original
|
PDF
|
EP106A
O-220FI5H
TT2140
transistor TT2140
TT2190
transistor horizontal TT2190
TT2170
TT2190 DATASHEET
tt2140 equivalent
tt2170 equivalent
2sd2689
inverter transistor TT2140
|
Flyback Transformers SANYO TV
Abstract: RD1004 2SC5707 uhf 150w mosfet 12v bfl4006 2SC5706 equivalent Si sw diode 20V 0.2A SOT323 SSFP package BBS3002 tv tube charger circuit diagrams
Text: Discrete Devices 2010-8 Mobile Equipment • Application Block ■ Charger [GSM, UMTS] Charger DC-DC Converter / Load SW P3 Down Converter Low end P6 5 to 6V 0.5 to 1A CPU AC Adapter AC Adapter [CDMA2000] Q2 Q3 +B D2 Q1 System AC Adapter RF Block Down Converter (High end)
|
Original
|
PDF
|
CDMA2000]
Flyback Transformers SANYO TV
RD1004
2SC5707
uhf 150w mosfet 12v
bfl4006
2SC5706 equivalent
Si sw diode 20V 0.2A SOT323
SSFP package
BBS3002
tv tube charger circuit diagrams
|
pnp transistor 800v
Abstract: 2SA1831 PNP transistor 800v 0,1
Text: j Ordering number: EN3 6 8 6 A _ 2 S A 1 8 31 PNP Triple Diffused Planar Silicon Transistor High-Voltage Amp, High-Voltage Switching w 1 II 1—0 IO 1 II >Q Features • High breakdown voltage VcEOmin = —800V . • Small c0b (c0b typ = 1.6pF).
|
OCR Scan
|
PDF
|
EN3686A
2SA1831
-800V
x3686-3/3
pnp transistor 800v
PNP transistor 800v 0,1
|
Untitled
Abstract: No abstract text available
Text: Power Transistors 2SC3796, 2SC3796A 2SC3796, 2SC3796A Silicon PNP Triple-Diffused Planar Type Package Dimensions High Breakdown Voltage, High Speed Switching • Features • High, speed switching • High collector-base voltage VCbo • Low collector-emitter saturation voltage (Vce rsa»)
|
OCR Scan
|
PDF
|
2SC3796,
2SC3796A
2SC3796
|
|
|
Untitled
Abstract: No abstract text available
Text: Power Transistors 2SC3970, 2SC3970A 2SC3970, 2SC3970A Silicon PNP Triple-Diffused Planar Type • Package Dimensions High Breakdown Voltage, High Speed Switching ■ Features • High speed sw itching • High collector-base voltage Vcbo • Wide area of safety operation (ASO)
|
OCR Scan
|
PDF
|
2SC3970,
2SC3970A
2SC3970
2SC3970
|
2SC3798
Abstract: pnp 900v 2SC3798A
Text: Power Transistors 2SC3798, 2SC3798A 2SC3798, 2SC3798A Silicon PNP Triple-Diffused Planar Type Package Dimensions High Breakdown Voltage, High Speed Switching U n it I mm • Features 5 .2max. 15.5m ax. 6.9min. • High speed switching 3.2 • High collector-base voltage Vcbo
|
OCR Scan
|
PDF
|
2SC3798,
2SC3798A
2SC3798
pnp 900v
2SC3798A
|
Untitled
Abstract: No abstract text available
Text: EPITAXIAL BASE - lCM UP TO 30A; VCEO UP TO 100V MAIN FEATURES • NPN and PNP types perfect complementary pairs ■ Medium switching speed ■ Medium fy (2 to 20 MHz) ■ High ruggedness THERMAL OXIDE P VAPOX Al GIAS! INTERNAL SCHEMATIC DIAGRAMS Epitaxial Base Technology is a general purpose low
|
OCR Scan
|
PDF
|
|
800V PNP
Abstract: 2SC3970 2SC3970A
Text: Power Transistors 2SC3970, 2SC3970A 2SC3970, 2SC3970A Silicon PNP Triple-Diffused Planar Type P ackage Dim ensions High Breakdown Voltage, High Speed Switching • F eatures , • High speed switching !2 9 max. • High collecto r-b a se v o ltage V cbo
|
OCR Scan
|
PDF
|
2SC3970,
2SC3970A
2SC3970
800V PNP
2SC3970A
|
2SC3796
Abstract: 2SC3796A SC-65
Text: Power Transistors 2SC3796, 2SC3796A 2SC3796, 2SC3796A Silicon PNP Triple-Diffused Planar Type Package Dimensions High Breakdown Voltage, High Speed Switching • Features O +1 . • High, speed switching • • High collector-base voltage VCBo • Low collector-emitter saturation voltage (Vce tsa«)
|
OCR Scan
|
PDF
|
2SC3796,
2SC3796A
2SC3796
2SC3796A
SC-65
|
2SC3794
Abstract: 2SC3794A vceo 800V PNP
Text: Power T ransistors 2SC3794, 2SC3794A 2SC3794, 2SC3794A Silicon PNP Triple-Diffused Planar Type Package Dimensions High Breakdown Voltage, High Speed Switching • Features • • • • . 5.7max. High speed switching High collector-base voltage V c b o
|
OCR Scan
|
PDF
|
2SC3794,
2SC3794A
2SC3794
bR328S2
2SC3794A
vceo 800V PNP
|
800V PNP
Abstract: pnp 1500v 8a BUX88 BU508AF PHILIPS SEMICONDUCTOR pnp 1200V 2A high voltage pnp transistor 700v pnp transistor 800v BU508DF BU603 PNP 300V
Text: N AMER PHILIPS/DISCRETE 44 2SE T> m ^>[=53=131 ÛQlbES2 T • T-33-Í?/ Power Devices VERY HIGH VOLTAGE TRANSISTORS in order of current rating TYPE NO. PACKAGE OUTLINE ,C(DC)0) VCES BU505 TO-220AB 2.5A BU506 TO-220AB 3A BU506D TO-220AB 3A SOT-93A 3A BU706
|
OCR Scan
|
PDF
|
T-33-Ã
BU505
O-220AB
BU506
BU506D
BU706
OT-93A
BU706D
800V PNP
pnp 1500v 8a
BUX88
BU508AF PHILIPS SEMICONDUCTOR
pnp 1200V 2A
high voltage pnp transistor 700v
pnp transistor 800v
BU508DF
BU603
PNP 300V
|
2N1479
Abstract: 2N1480 2N1481 2N1482 2N1700 2N5781 2N5782 2N5784 2N5785 2N5786
Text: "flM NPN TO-39/TO-5 2848352 DIODE TRANSISTOR DE J 2 B M Û 3 S E 0DÜG155 5 C O . I N C 84D 00125 D jr. 3 l-O fT D1QDE TMI\l.515T0ft Cü.if\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area ca ll TO LL FREE 800-526-4581 FA X No. 201-575-5863
|
OCR Scan
|
PDF
|
O-39/TO-5
D00D1SS
515TQft
2N1479
2N1480
2N1481
2N1482
2N1700
2N5784
2N5785
2N5781
2N5782
2N5786
|
ALY TRANSISTOR
Abstract: 40349 40327 ka025 20100 2N4866 BFE 75A transistor 160v 1.5a pnp transistor ALY 2N1479
Text: "flM NPN TO-39/TO-5 2848352 DIODE TRANSISTOR DE J 2 B M Û 3 S E 0DÜG155 5 C O . I N C 84D 00125 D jr. 3 l-O fT D1QDE TMI\l.515T0ft Cü.if\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area ca ll TO LL FREE 800-526-4581 FA X No. 201-575-5863
|
OCR Scan
|
PDF
|
O-39/TO-5
D00D1SS
515TQft
2N1479
2N1480
2N1481
2N1482
2N1700
2N5784
2N5785
ALY TRANSISTOR
40349
40327
ka025
20100
2N4866
BFE 75A
transistor 160v 1.5a pnp
transistor ALY
|
C4106 transistor
Abstract: c4106 B824 transistor transistor c3457 C4105 transistor transistor c4106 B1133 transistor d1061 transistor c3447 transistor d1191
Text: SAfiYO T0-220MF Mini Fin Power Transistor Series Featur-es Sanyo power transistor case outline T0-220MF (Mini Fin) is a small-sized package suited for mounting on electronic equipment that is limited in height. When mounted on the board, the height above the board is approximately 10mm lower
|
OCR Scan
|
PDF
|
T0-220MF
T0-220
2SB1266
2SD1902
2SB1267
2SD1903
2SB1268
2SD1904
2SB1269
C4106 transistor
c4106
B824 transistor
transistor c3457
C4105 transistor
transistor c4106
B1133
transistor d1061
transistor c3447
transistor d1191
|
