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    V2101 Search Results

    V2101 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    72V2101L20PF8 Renesas Electronics Corporation 256K x 9 SuperSync FIFO, 3.3V Visit Renesas Electronics Corporation
    72V2101L15PFI Renesas Electronics Corporation 256K x 9 SuperSync FIFO, 3.3V Visit Renesas Electronics Corporation
    72V2101L15PFI8 Renesas Electronics Corporation 256K x 9 SuperSync FIFO, 3.3V Visit Renesas Electronics Corporation
    72V2101L10PFG8 Renesas Electronics Corporation 256K x 9 SuperSync FIFO, 3.3V Visit Renesas Electronics Corporation
    72V2101L15PF Renesas Electronics Corporation 256K x 9 SuperSync FIFO, 3.3V Visit Renesas Electronics Corporation
    72V2101L10PF Renesas Electronics Corporation 256K x 9 SuperSync FIFO, 3.3V Visit Renesas Electronics Corporation
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    V2101 Price and Stock

    Eaton Bussmann MCL2012V2-101-R

    FIXED IND 100NH 300MA 900MOHM SM
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    DigiKey MCL2012V2-101-R Cut Tape 6,086 1
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    Sager MCL2012V2-101-R
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    Rochester Electronics LLC MV2101G

    VARIABLE CAPACITANCE DIODE
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    DigiKey MV2101G Bulk 6,000 2,049
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    Eaton Bussmann MCL1608V2-101-R

    FIXED IND 100NH 300MA 1.2OHM SMD
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    DigiKey MCL1608V2-101-R Cut Tape 2,289 1
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    Master Electronics MCL1608V2-101-R
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    Analog Devices Inc ADMV2101BRHZ

    INGAP HBT DIVIDE-BY-4 SMT, DC -
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    DigiKey ADMV2101BRHZ Cut Tape 110 1
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    ADMV2101BRHZ Reel 50
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    ADMV2101BRHZ Digi-Reel 1
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    Mouser Electronics ADMV2101BRHZ 47
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    Eaton Bussmann HCM1A2213V2-101-R

    FIXED IND 100UH 6.4A 39.5MOHM SM
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    DigiKey HCM1A2213V2-101-R Cut Tape 25 1
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    V2101 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FQV2111 • V2101 · FQV291 · FQV281 · FQV271 · FQV261 FlexQTMII 3.3 Volt Synchronous x9 First-In/First-Out Queue Memory Configuration Part Number 524,288 x 9 262,144 x 9 131,072 x 9 65,536 x 9 32,768 x 9 16,384 x 9 FQV2111 V2101 FQV291 FQV281 FQV271


    Original     		PDF FQV2111 FQV2101 FQV291 FQV281 FQV271 FQV261

    FQV2111-7

    Abstract: No abstract text available
    Text: FQV2111 • V2101 · FQV291 · FQV281 · FQV271 · FQV261 FlexQTMII 3.3 Volt Synchronous x9 First-In/First-Out Queue Memory Configuration Part Number 524,288 x 9 262,144 x 9 131,072 x 9 65,536 x 9 32,768 x 9 16,384 x 9 FQV2111 V2101 FQV291 FQV281 FQV271


    Original     		PDF FQV2111 FQV2101 FQV291 FQV281 FQV271 FQV261 FQV2111-7

    FQV2101-6

    Abstract: FQV2111-6 FQV281-6 FQV291-6
    Text: FQV2111 • V2101 • FQV291 • FQV281 • FQV271 • FQV261 FlexQ II 3.3 Volt Synchronous x9 First-In/First-Out Queue Memory Configuration Part Number 524,288 x 9 262,144 x 9 131,072 x 9 65,536 x 9 32,768 x 9 16,384 x 9 FQV2111 V2101 FQV291 FQV281


    Original     		PDF FQV2111 FQV2101 FQV291 FQV281 FQV271 FQV261 FQV2101-6 FQV2111-6 FQV281-6 FQV291-6

    FQV2101-6

    Abstract: FQV2111-6 FQV2811 FQV291-6
    Text: FQV2111 • V2101 · FQV291 · FQV2811 · FQV271 · FQV261 FlexQTMII 3.3 Volt Synchronous x9 First-In/First-Out Queue Memory Configuration Part Number 524,288 x 9 262,144 x 9 131,072 x 9 65,536 x 9 32,768 x 9 16,384 x 9 FQV2111 V2101 FQV291 FQV281 FQV271


    Original     		PDF FQV2111 FQV2101 FQV291 FQV2811 FQV271 FQV261 FQV281 FQV2101-6 FQV2111-6 FQV2811 FQV291-6

    diodes SY 200

    Abstract: SY 165
    Text: SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODES ISSUE 3 - JANUARY 1996 FM M V2101 FM M V2109 O_ PIN CONFIGURATION PARTMARKING DETAILS SEE TUNING CHARACTERISTICS 1 ABSOLUTE M A X IM U M RATINGS. PARAMETER SY M B O L VALUE UNIT 30 V Reverse Voltage


    OCR Scan     		PDF V2101 V2109 f-250M FMMV2101i FMMV2103 FMMV2104 FMMV2105 FMMV2107 FMMV21Q8 diodes SY 200 SY 165

    DUAL DIODE

    Abstract: g28 SOT23 FMMD7000 FMMD2836 FMMD6100 FMMD2838 BAW* diode FMMD2835 FMMD2837 5V6 DIODE
    Text: SOT-23 TRANSISTORS & DIODES SILICON ABRIJPT TUNER D ODES Type FM M V2101 F M M V 2 10 2 FM M V 2 1 0 3 FM M V 2 1 0 4 FM M V2105 FM M V 2 1 0 6 FM M V 2 1 07 FM M V 2 1 0 8 FM M V 2 1 0 9 max. Capacitance ratio f=1M Hz C 2/C 20 min. Q at V „ = 3V f = 50MHz


    OCR Scan     		PDF OT-23 C2/C20 50MHz FMMV2101 FMMV2102 FMMV2103 FMMV2104 FMMV2105 FMMV2106 FMMV2107 DUAL DIODE g28 SOT23 FMMD7000 FMMD2836 FMMD6100 FMMD2838 BAW* diode FMMD2835 FMMD2837 5V6 DIODE

    marking e6

    Abstract: No abstract text available
    Text: R.F. TRANSISTORS AND DIODES TABLE 5: SOT-23 ABRUPT TUNER DIODES Type Reverse breakdown Voltage V R Volts max. FM M V2101 FM M V 21 0 2 FM M V 21 0 3 F M M V 21 0 4 FM M V 21 0 5 FM M V 21 0 6 F M M V 2107 F M M V 2108 FM M V 21 0 9 30 30 30 30 30 30 30 30


    OCR Scan     		PDF OT-23 2/C30 V2101 ZC2811 ZC2800E ZC2810E ZC2811E ZC5800E ZC2810E) marking e6

    x band varactor diode

    Abstract: No abstract text available
    Text: V2101 m SILICON HYPERABRUPT TUNING VARACTOR P A C K A G E S TY LE D O -7 D E S C R IP T IO N : M A X DUX 2.667 T h e A S I K V2101 is a Silicon fllA. Hyperabrupt Tuning Varactor Diode Designed for UH F Applications up to 800 M H z.T h e Cathode is Indicated by


    OCR Scan     		PDF KV2101 x band varactor diode

    MV2112

    Abstract: No abstract text available
    Text: K n o x S e m ic o n d u c t o r , I n c . GENERAL PURPOSE ABRUPT VARACTOR DIODES V2101 - MV2115 MV2201 - MV2215 TYPE NUMBER V2101 MV2102 MV2103 MV2104 MV2105 MV2106 MV2107 MV2108 MV2109 MV2110 MV2111 MV2112 MV2113 MV2114 MV2115 MV2201 MV2203 MV2205 MV2207


    OCR Scan     		PDF MV2101 MV2115 MV2201 MV2215 MV2101 MV2102 MV2103 MV2104 MV2105 MV2106 MV2112

    FMMV105G

    Abstract: fmmv2109 ZC2800 ZC2811 ZC5800 ZC820 ZC821 ZC822 ZC823 ZC824
    Text: E-LINE DIODE SPECIFICATIONS SCH O TTK Y BARRIER DIO DES These devices have a high breakdown voltage and ultra fast switching capabilities. R.F. applications include low noise mixers, large and small signal detectors, limiters and discriminators. Applications


    OCR Scan     		PDF 10/iA ZC2800 ZC2811 ZC5800 ZC2800-ZC5800 ZC2811 OT-23 ZC2800E rZC2810E ZC2811E FMMV105G fmmv2109 ZC820 ZC821 ZC822 ZC823 ZC824

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan     		PDF

    V2101

    Abstract: diode mv2105 SOT23 package diodes MV2105* equivalent
    Text: MOTOROLA Order this document by V2101LT1/D SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diodes These devices are designed in the popular PLASTIC PACKAGE for high volume requirements of FM Radio and TV tuning and AFC, general frequency control and tuning applications.They provide solid-state reliability in replacement of mechanical


    OCR Scan     		PDF MMBV2101LT1/D OT-23 MMBV2101LT1 MMBV2103LT1 MMBV2105LT1 MMBV2107LT1 MMBV2108LT1 MMBV2109LT1 MV2101 V2104 V2101 diode mv2105 SOT23 package diodes MV2105* equivalent

    powec rm 1110

    Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
    Text: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor


    OCR Scan     		PDF 111ii MZ5558 Z5555, Z5556, MZ5557 powec rm 1110 rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor

    1N5438

    Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
    Text: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­


    OCR Scan     		PDF 27TfC 1N5438 tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175

    ZC2800E

    Abstract: BAS70-05 BAS70-06 ZC2810E ZC2811E ZC5800E ZC830A ZC831A ZC832A ZC833A
    Text: SOT-23 TRANSISTORS & DIODES SCH O TTKY BARRIER DIO DES Type V br at Ir -1 0 j A min. (Volts VF at lF-1mA max. (mV) 70 20 15 50 410 410 410 410 ZC2800E ‘ ZC2810E ZC2811E ZC5800E max. nA at VR (volts) 200 100 100 200 lF at VF-1V min. (mA) CratvR-0V f—1MHz


    OCR Scan     		PDF OT-23 ZC2800E ZC2810E ZC2811E ZC5800E ZC2810E) Ir-10mA BAS70-05 BAS70-06 ZC2800-ZC5800 ZC830A ZC831A ZC832A ZC833A

    Untitled

    Abstract: No abstract text available
    Text: V2101 to FMMV2109 SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE PIN CONFIGURATION PARTMARKING DETAIL: V2101 - 6R FMMV2102 - 6F FMMV2103 - 6G FMMV2104 - 6H FMMV2105 - 6J FMMV2106 - 6K FMMV2107 - 6L FMMV2108 - 6M FMMV2109 - 6N 1 1 T ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF FMMV2101 FMMV2109 FMMV2101 FMMV2102 FMMV2103 FMMV2104 FMMV2105 FMMV2106 FMMV2107 FMMV2108

    Untitled

    Abstract: No abstract text available
    Text: V2101 SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODES ISSUE 3 - JANUARY 1996 to FMMV2109 O_ PIN CONFIGURATION PARTMARKING DETAILS SEE TUNING CHARACTERISTICS 1 t ABSOLUTE MAXIMUM RATINGS. PARAMETER SYM BOL Reverse Voltage VALUE U N IT Vr


    OCR Scan     		PDF FMMV2101 FMMV2109 V2101 H7G570

    varactor 36z

    Abstract: germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902
    Text: TH€ SEMICONDUCTOR DATA LIBRARY FIRST EDITION prepared by Technical Information Center T h e in fo rm a tio n in th is bo o k has been c a re fu lly checked and is believed to be re lia b le ; ho w ever, no re s p o n s ib ility is assumed fo r inaccuracies. F u rth e rm o re , th is in fo rm a tio n does n o t convey to the purchaser o f s e m ic o n d u c to r


    OCR Scan     		PDF Z1000 MZ4614 MZ4627 1N4099 M4L3052 M4L3056 1N5158 varactor 36z germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902

    MHW721A2

    Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA


    OCR Scan     		PDF 1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503

    V2103

    Abstract: V2109
    Text: SILICON EPICAP DIODES . . . designed in the popular P LA S TIC PA CK A G E for high volum e require­ m ents of FM Radio and TV tuning and A FC , general frequency control and tuning applications; providing solid-state reliability in replacem ent of m echanical tuning m ethods.


    OCR Scan     		PDF MV21XX MMBV21XXLT1 MMBV2101LT1 MMBV2103LT1 MMBV2105LT1 MMBV2107LT1 MMBV2109LT1* MV2101 MV2103 MV2105 V2103 V2109

    v2308

    Abstract: V23083 v2303 V2307 sq201 MV2201 EP1014 V2306 V2107 V2209
    Text: TA B L E OF C O N TE N TS GLASS PACKAGED HERMETICALLY SEALED Suffix Letter Indicates Capacitance Tolerance S LIG H T HYPERABRUPT Page No. ABRUPT H A 1 9 1 5 A - H A 1 9 5 0 A , B, C 1N951 - 1 N 9 5 6 . 1N 4786- 1N 4815A , B . . . 1N 5 1 3 9 - 1 N 5 1 4 8 5 A , B . .


    OCR Scan     		PDF 1N951 PC107 SQ181 V2203 V2205 V2209 V2303 V2304 V2305 V2306 v2308 V23083 V2307 sq201 MV2201 EP1014 V2107

    MV2107

    Abstract: BV2108 MV2113 BV-2108
    Text: MOTOROLA SEMICONDUCTOR V2101L thru MMBV2109L V2101 thru MV2115 TECHNICAL DATA W V O L T A G E -V A R IA B L E C A PA C ITA N C E D IO D ES C 6.8-100 pF 30 VOLTS SILIC O N EPIC A P D IO D ES % C A S E 318-07 TO-236AB SOT-23 V2101L thru MMBV2109L C A SE 182-02


    OCR Scan     		PDF MMBV2101L MMBV2109L MV2101 MV2115 O-236AB OT-23 MMBV2109L MV2107 BV2108 MV2113 BV-2108

    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


    OCR Scan     		PDF AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor

    MV2110

    Abstract: MV2109 positive lead dioda bridge MV2112 DIODE CQ MV2101 MV2102 MV2103 MV2107 mv2110 diode
    Text: V2101 SILICON thru MV2115 v v c - W IV O LTA G E -V A R IA B LE CAPACITANCE DIODES 6 .8 -1 0 0 p F 30 V O L T S SILICON EPICAP DIODES . . . designed in the popular P L A S T IC P A C K A G E for high volume requirements of FM Radio and T V tuning and A F C , general frequency


    OCR Scan     		PDF MV2101 MV2115 MV2110 MV2109 positive lead dioda bridge MV2112 DIODE CQ MV2101 MV2102 MV2103 MV2107 mv2110 diode