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    FMMV2102 Search Results

    FMMV2102 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FMMV2102 Zetex Semiconductors DIODE VAR CAP 30V 3SOT23 Original PDF
    FMMV2102 Zetex Semiconductors Quick Reference Guide (Discrete Semiconductors) 1991 Scan PDF

    FMMV2102 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N3819 spice model

    Abstract: varactor APPLICATION construction of varactor diode 1GHz vco bfr90 equivalent 0-30v variable power supply BBY40 spice 2N3819 Application Note 2N3819 equivalent transistor 2N3819
    Text: Application Note 9 Issue 2 January 1996 Zetex Variable Capacitance Diodes Neil Chadderton Introduction The advent of varactor diodes has made a huge impact in many areas of electronic design, which is only too evident in todays consumer products. Formerly, where bulky or unreliable


    Original     		PDF 50MHz) OT-23 ZC740 FMMV2101 ZC741 FMMV2102 ZC742 FMMV2103 ZC743 2N3819 spice model varactor APPLICATION construction of varactor diode 1GHz vco bfr90 equivalent 0-30v variable power supply BBY40 spice 2N3819 Application Note 2N3819 equivalent transistor 2N3819

    220v AC voltage stabilizer schematic diagram

    Abstract: BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 2-6 Fiber Optic Connectors and Accessories . . . . . . . . . . . See Page 121 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 10-122 Fiber Optic Cable, Connectors, and Accessories . . . . . . See Pages 118-122


    Original     		PDF P390-ND P465-ND P466-ND P467-ND LNG901CF9 LNG992CFBW LNG901CFBW LNG91LCFBW 220v AC voltage stabilizer schematic diagram BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor

    Untitled

    Abstract: No abstract text available
    Text: FMMV2101 to FMMV2109 SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE PIN CONFIGURATION PARTMARKING DETAIL: FMMV2101 - 6R FMMV2102 - 6F FMMV2103 - 6G FMMV2104 - 6H FMMV2105 - 6J FMMV2106 - 6K FMMV2107 - 6L FMMV2108 - 6M FMMV2109 - 6N 1 1 T ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF FMMV2101 FMMV2109 FMMV2101 FMMV2102 FMMV2103 FMMV2104 FMMV2105 FMMV2106 FMMV2107 FMMV2108

    zener diode marking E7

    Abstract: 5V6 DIODE FMMV2107 zener diode E7 Zener Diode LF marking DIODE ZENER DUAL 16 FMMD6100 FMMV2102 FMMD2837 FMMV2104
    Text: SOT-23 TRANSISTORS & DIODES SILICO N ABRIJPT TUNER D O DES Type FMMV2101 FMMV2102 FMMV2103 FMMV2104 FMMV2105 FMMV2106 FM M V2107 FMMV2108 FMMV2109 Reverse breakdown Voltage V R Volts max. 30 30 30 30 30 30 30 30 30 Nominal capacitance at V R= 2V, f =1MHz ^•tot PF


    OCR Scan     		PDF OT-23 C2/C20 50MHz FMMV2101 FMMV2102 FMMV2103 FMMV2104 FMMV2105 FMMV2106 FMMV2107 zener diode marking E7 5V6 DIODE zener diode E7 Zener Diode LF marking DIODE ZENER DUAL 16 FMMD6100 FMMD2837

    ZC830B

    Abstract: zc840 ZC830 ZC830A ZC831A ZC832A ZC833A ZC834A ZC835A ZC836A
    Text: SOT23 #• HYPERABRUPT TUNER DIODES Pinout : 1-Cathode, 3-Anode N om inal Capacitance at V r = 2 V , f=1MHz Reverse Breakdown Voltage Type Capacitance Ratio at f=1MHz C2/C2o Ctot Q at V r =3V f=50MHz Device Code VR V M in Typ pF Max pF Min Max Typ pF 25 9.0


    OCR Scan     		PDF c2/c20 50MHz ZC830A ZC831A ZC832A ZC833A ZC834A ZC835A ZC836A ZC830) ZC830B zc840 ZC830

    ZC930

    Abstract: No abstract text available
    Text: SOT23 HYPERABRUPT TUNER DIODES Pinout : 1-Cathode, 3-Anode Nom inal Capacitance at VR=2V, f=1MHz Ctot Reverse Breakdown Voltage Type Vr V Min pF Typ pF Capacitance Ratio at f=1MHz C2/C20 Max pF Q at V r =3V f=50MHz Min Max Typ Device Code ZC830A 25 9.0 10.0


    OCR Scan     		PDF ZC830A ZC831A ZC832A ZC833A ZC834A ZC835A ZC836A C2/C20 50MHz ZC830) ZC930

    zc840

    Abstract: ZC830 ZC830A ZC830B ZC831A ZC832A ZC833A ZC834A ZC835A ZC836A
    Text: SOT23 'f r HYPERABRUPT TUNER DIODES Pinout : 1-Cathode, 3-Anode N om inal Capacitance at Vr=2V, f=1MHz Reverse Breakdown Voltage Type Capacitance Ratio at f=1MHz C2/C2o Ctot Q at V r =3V f=50MHz Device Code VR V M in pF Typ pF Max pF Min Max Typ ZC830A 25


    OCR Scan     		PDF c2/c20 50MHz ZC830A ZC831A ZC832A ZC833A ZC834A ZC835A ZC836A ZC830) zc840 ZC830 ZC830B

    6H MARKING

    Abstract: ZC2800 ZC2811 ZC5800 ZC820 ZC821 ZC822 ZC823 ZC824 ZC825
    Text: E-LINE DIODE SPECIFICATIONS SCHOTTKY BARRIER DIODES These devices have a high breakdown voltage and ultra fast switching capabilities. R.F. applications include low noise mixers, large and small signal detectors, limiters and discriminators. Applications under pulsed conditions include ultra high speed switching, clamping, sampling gates and pulse shaping.


    OCR Scan     		PDF 10/iA ZC2800 ZC2811 ZC5800 ZC2800-ZC5800 ZC2811 OT-23 ZC2800E rZC2810E ZC2811E 6H MARKING ZC820 ZC821 ZC822 ZC823 ZC824 ZC825