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    UPF1 Price and Stock

    Siemens 3SB02-UPF1

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    Onlinecomponents.com 3SB02-UPF1
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    Nichicon Corporation UPF1V331MPH1TD

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    Bristol Electronics UPF1V331MPH1TD 9,500 7
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    Not Specified UPF1030P

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    Nichicon Corporation UPF1E122MHH6TN

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    Bristol Electronics UPF1E122MHH6TN 1,500
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    Nichicon Corporation UPF1H102MHH

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    UPF1 Datasheets (56)

    Part ECAD Model Manufacturer Description Curated Type PDF
    UPF1010 Cree LDMOS FETs in Class AB Operation Cellular to 1 GHz Original PDF
    UPF1010-178 Cree FET Transistor, 10W, 1.0GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs Original PDF
    UPF1010F Cree 10W, 1GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Original PDF
    UPF1010F Cree FET Transistor, 10W, 1.0GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs Original PDF
    UPF1010P Cree 10W, 1GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Original PDF
    UPF1010P Cree FET Transistor, 10W, 1.0GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs Original PDF
    UPF1030 Cree LDMOS FETs in Class AB Operation Cellular to 1 GHz Original PDF
    UPF1030F Cree 30W, 1GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Original PDF
    UPF1030F Cree FET Transistor, 30W, 1.0GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs Original PDF
    UPF1030P Cree FET Transistor, 30W, 1.0GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs Original PDF
    UPF105-105 Digital Power AC/DC POWER SUPPLY SNGL OUT 5V 16A 120W Original PDF
    UPF105-124 Digital Power AC/DC POWER SUPPLY SNGL OUT 24V 5A 120W Original PDF
    UPF105-148 Digital Power AC/DC POWER SUPPLY SNGL OUT 48V 2.5A 120W Original PDF
    UPF105-230 Digital Power AC/DC POWER SUPPLY DUAL OUT 5V 16A 120W Original PDF
    UPF105-301 Digital Power AC/DC POWER SUPPLY TRI OUT 12V 10A 120W Original PDF
    UPF105-408 Digital Power AC/DC POWER SUPPLY QUAD OUT 24V 13A 120W Original PDF
    UPF1060 Cree 60W, 1GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Original PDF
    UPF1060 Cree LDMOS FETs in Class AB Operation Cellular to 1 GHz Original PDF
    UPF1060F Cree FET Transistor, 60W, 1.0GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs Original PDF
    UPF1060P Cree FET Transistor, 60W, 1.0GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs Original PDF

    UPF1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    J216

    Abstract: UPF1030 J2-13
    Text: URFDB Sec 05_1030 11/3/99 10:39 AM Page 5-1 UPF1030 30W, 1GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Description This device is designed for base station applications up to frequencies of 1GHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, GSM, FM,


    Original     		PDF UPF1030 30dBc J216 UPF1030 J2-13

    Untitled

    Abstract: No abstract text available
    Text: RELEASED DATA SHEET UPF105 Series Universal Input Power Factor Corrected 120 Watt Switchers Features: 1 1 1 1 1 1 1 1 Active Power Factor Correction PFC 75% typical efficiency EN55022-B conducted Up to 4 outputs Compact 6.0" x 3.3" x 1.4" size UL, cUL, VDE and CE


    Original     		PDF UPF105 EN55022-B 90-250Vac 115Vac 500Hz.

    ultrarf

    Abstract: UPF18030 MRF18030
    Text: UPF18030 30W, 2GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Designed for DCS base station applications in the frequency band 1.805 to 1.880 GHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, GSM, and Multi-Carrier Power


    Original     		PDF UPF18030 100kHz 270mA 270mA, ultrarf UPF18030 MRF18030

    MRF19030

    Abstract: UPF18030-095
    Text: UPF18030-095 30W, 1.88 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for DCS base station applications in the frequency band 1.805 GHz to 1.880 GHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, GSM,


    Original     		PDF UPF18030-095 MRF19030 UPF18030-095 MRF19030

    cree rf

    Abstract: UPF14060 UPF14060F UPF14060P
    Text: UPF14060 60W, 1.4 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for DCS base station applications at 1400 MHz. Rated with a minimum output power of 60W, it is ideal for 16 QAM, CDMA, TDMA, GSM, and Multi-Carrier Power Amplifiers in


    Original     		PDF UPF14060 UPF14060F cree rf UPF14060 UPF14060F UPF14060P

    Untitled

    Abstract: No abstract text available
    Text: UPF14060 60W, 1.66 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for DCS base station applications at 1400 MHz. Rated with a minimum output power of 60W, it is ideal for 16 QAM, CDMA, TDMA, GSM, and Multi-Carrier Power Amplifiers in


    Original     		PDF UPF14060 UPF14060F 540mA 540mA,

    potentiometer 1k ohm

    Abstract: L2 diode ultrarf ATC100 MMBTA64 MRF19060 UPF19060 Z8 SOT23 diode zener Z11 0603 440117
    Text: UPF19060 60W, 2 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for PCS and PCN base station applications in the frequency band 1.9 to 2.0 GHz. Ideal for CDMA, TDMA, GSM, and Multi-Carrier Power Amplifiers in Class A or AB operation.


    Original     		PDF UPF19060 MRF19060 potentiometer 1k ohm L2 diode ultrarf ATC100 MMBTA64 MRF19060 UPF19060 Z8 SOT23 diode zener Z11 0603 440117

    ultrarf

    Abstract: UPF18045-159 2200PF 470PF 47UF MBD701 MMBTA64 1UF 50V SMT CASE C diode gp 805
    Text: UPF18045-159 45W, 1.88 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for DCS base station applications in the frequency band 1.805 to 1.880 GHz. Rated with a typical output power of 50 W PEP for high peak-to-average signals , this device is well suited in


    Original     		PDF UPF18045-159 ultrarf UPF18045-159 2200PF 470PF 47UF MBD701 MMBTA64 1UF 50V SMT CASE C diode gp 805

    ultrarf

    Abstract: MRF19090 UPF19090
    Text: UPF19090 90W, 2GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Designed for DCS base station applications in the frequency band 1.9 to 2.0 GHz. Rated with a minimum output power of 90W, it is ideal for CDMA, TDMA, GSM, and Multi-Carrier Power


    Original     		PDF UPF19090 IS-95 30kHz 100kHz 800mA 800mA, ultrarf MRF19090 UPF19090

    UPF1010

    Abstract: f940 ultrarf
    Text: URFDB Sec 04_1010 11/3/99 10:37 AM Page 4-1 UPF1010 10W, 1GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Description This device is designed for base station applications up to frequencies of 1GHz. Rated with a minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, FM,


    Original     		PDF UPF1010 30dBc UPF1010 f940 ultrarf

    DP100

    Abstract: EN55022-B UPF105-105 UPF105-124 UPF105-148 US100 Molex CE certificate
    Text: flexibility C O R P O R A T I O N S E R I E S UPF105 Series Universal Input Power Factor Corrected 120 Watt Switchers • Active Power Factor Correction PFC • 75% typical efficiency • EN55022-B conducted • Up to 4 outputs • Compact 6.0” x 3.3” x 1.4”


    Original     		PDF UPF105 EN55022-B 90-250Vac DP0201 94538-3158CA DP100 UPF105-105 UPF105-124 UPF105-148 US100 Molex CE certificate

    UPF150-301

    Abstract: UPF150-401 UPF150 DP150 PH 36A UPF150-408 EN55022-B UPF150-234 US150 UPF1
    Text: flexibility C O R P O R A T I O N S E R I E S UPF150 Series Universal Input Power Factor Corrected 150 Watt Switchers •41920 Christy Street •Fremont, California •94538-3158 •510-657-2635 •Fax: 510-657-6634 •sales@digipwr.com •www.digipwr.com


    Original     		PDF UPF150 EN55022-B 90-250Vac 16AWG. UPF155 UPF155 DP0201 UPF150-301 UPF150-401 DP150 PH 36A UPF150-408 UPF150-234 US150 UPF1

    F1 J36

    Abstract: ultrarf UPF1080
    Text: URFDB Sec 07_1080 11/3/99 10:53 AM Page 7-1 UPF1080 80W, 1GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Description This device is designed for base station applications up to frequencies of 1GHz. Rated with a minimum output power of 80W, it is ideal for CDMA, TDMA, GSM, FM,


    Original     		PDF UPF1080 30dBc F1 J36 ultrarf UPF1080

    ultrarf

    Abstract: J216
    Text: UPF1030 30W, 1GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS This device is designed for base station applications up to frequencies of 1GHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power Amplifiers


    Original     		PDF UPF1030 30dBc UPF1030F UPF1030P ultrarf J216

    J181

    Abstract: UPF1010F f940 ultrarf UPF1010 UPF1010P package type 440109
    Text: UPF1010 10W, 1GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS This device is designed for base station applications up to frequencies of 1GHz. Rated with a minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power Amplifiers


    Original     		PDF UPF1010 30dBc UPF1010F UPF1010P J181 UPF1010F f940 ultrarf UPF1010 UPF1010P package type 440109

    J216

    Abstract: UPF1030P UPF1030 UPF1030F J156 J-146
    Text: UPF1030 30W, 1.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for base station applications up to frequencies of 1.0 GHz. Rater with a minimum output power of 30W, it is ideal for CDMA, TDMA, GSM, FM, Single or MultiCarrier Power Amplifiers in Class A or AB operation.


    Original     		PDF UPF1030 30dBc UPF1030F UPF1030P UPF1030 350mA J216 UPF1030P UPF1030F J156 J-146

    UPF1080F

    Abstract: UPF1080 J120 MOSFET upf1080p
    Text: UPF1080 80W, 1.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for base station applications up to frequencies of 1.0 GHz. Rater with a minimum output power of 80W, it is ideal for CDMA, TDMA, GSM, FM, Single or MultiCarrier Power Amplifiers in Class A or AB operation.


    Original     		PDF UPF1080 30dBc UPF1080F UPF1080P UPF1080 600mA UPF1080F J120 MOSFET upf1080p

    ultrarf

    Abstract: UPF14060 UPF14060F UPF14060P
    Text: UPF14060 60W, 1.4GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Designed for DCS base station applications at 1400MHz. Rated with a minimum output power of 60W, it is ideal for 16QAM, CDMA, TDMA, GSM, and Multi-Carrier Power Amplifiers in Class A or AB


    Original     		PDF UPF14060 1400MHz. 16QAM, UPF14060F ultrarf UPF14060 UPF14060F UPF14060P

    N channel mosfet

    Abstract: No abstract text available
    Text: UPF1N50 SURFACE MOUNT N CHANNEL MOSFET W ATE R TOW N DIVISI ON PRELIMINARY DESCRIPTION KEY FEATURES The UPF1N50 is ideal for ultra small motor control and switch mode power supply applications. The Powermite 3 is designed for surface mounting using vapor phase,


    Original     		PDF UPF1N50 UPF1N50 MSC1541 N channel mosfet

    ultrarf

    Abstract: MRF19030
    Text: UPF19030 30W, 2GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Designed for PCN and PCS base station applications in the frequency band 1.9 to 2.0 GHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, GSM, and Multi-Carrier Power


    Original     		PDF UPF19030 MRF19030 IS-97 Adjace65 ultrarf MRF19030

    MRF19030

    Abstract: UPF18030-095 IS954
    Text: UPF18030-095 30W, 1.88 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for DCS base station applications in the frequency band 1.805 GHz to 1.880 GHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, GSM,


    Original     		PDF UPF18030-095 MRF19030 250mA, UPF18030-095 MRF19030 IS954

    GP 101 GPS

    Abstract: ultrarf 01UF ATC100 MRF19090 UPF19090
    Text: UPF19090 90W, 2 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for PCS and PCN base station applications in the frequency band 1.9 to 2.0 GHz. Ideal for CDMA, EDGE, GSM, and Multi-Carrier Power Amplifiers in Class A or AB operation.


    Original     		PDF UPF19090 MRF19090 IS-95 GP 101 GPS ultrarf 01UF ATC100 MRF19090 UPF19090

    UPF1060

    Abstract: POWER 28V 3A 60W ultrarf
    Text: URFDB Sec 06_1060 11/3/99 10:51 AM Page 6-1 UPF1060 60W, 1GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Description This device is designed for base station applications up to frequencies of 1GHz. Rated with a minimum output power of 60W, it is ideal for CDMA, TDMA,


    Original     		PDF UPF1060 30dBc UPF1060 POWER 28V 3A 60W ultrarf

    UPF1060F

    Abstract: UPF1060P UPF1060 POWER 28V 3A 60W J027
    Text: UPF1060 60W, 1.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for base station applications up to frequencies of 1.0 GHz. Rater with a minimum output power of 60W, it is ideal for CDMA, TDMA, GSM, FM, Single or MultiCarrier Power Amplifiers in Class A or AB operation.


    Original     		PDF UPF1060 30dBc UPF1060F UPF1060P UPF1060 UPF1060F UPF1060P POWER 28V 3A 60W J027