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    UPF14060F Search Results

    UPF14060F Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    UPF14060F Cree 60W, 1.4GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Original PDF
    UPF14060F Cree FET Transistor, 60W, 1.4GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs Original PDF

    UPF14060F Datasheets Context Search

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    cree rf

    Abstract: UPF14060 UPF14060F UPF14060P
    Text: UPF14060 60W, 1.4 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for DCS base station applications at 1400 MHz. Rated with a minimum output power of 60W, it is ideal for 16 QAM, CDMA, TDMA, GSM, and Multi-Carrier Power Amplifiers in


    Original     		PDF UPF14060 UPF14060F cree rf UPF14060 UPF14060F UPF14060P

    Untitled

    Abstract: No abstract text available
    Text: UPF14060 60W, 1.66 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for DCS base station applications at 1400 MHz. Rated with a minimum output power of 60W, it is ideal for 16 QAM, CDMA, TDMA, GSM, and Multi-Carrier Power Amplifiers in


    Original     		PDF UPF14060 UPF14060F 540mA 540mA,

    ultrarf

    Abstract: UPF14060 UPF14060F UPF14060P
    Text: UPF14060 60W, 1.4GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Designed for DCS base station applications at 1400MHz. Rated with a minimum output power of 60W, it is ideal for 16QAM, CDMA, TDMA, GSM, and Multi-Carrier Power Amplifiers in Class A or AB


    Original     		PDF UPF14060 1400MHz. 16QAM, UPF14060F ultrarf UPF14060 UPF14060F UPF14060P